Thin film piezoelectric bulk acoustic wave resonator and radio frequency filter using the same
An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. Another object is to provide an inexpensive filter with dramatically improved frequency characteristics, using thin film piezoelectric bulk acoustic wave resonators that can be formed on one substrate. A thin film piezoelectric bulk acoustic wave resonator of the present invention has a laminated structure including a piezoelectric thin film, and a first metal electrode film and a second metal electrode film between which part of the piezoelectric thin film is sandwiched; the first metal electrode film has a plurality of holes formed on an electrode plane opposite to the second metal electrode film and having a depth equivalent to at least the thickness of the first metal electrode film; and if a combined thickness of top and bottom electrode layers and the piezoelectric thin film is ht, the covering ratio σ of the electrode plane of the first metal electrode film satisfies a condition 0<σ<1 for every 1.28 ht pitch.
1. A thin film piezoelectric bulk acoustic wave resonator having a laminated structure, said laminated structure comprising:
a piezoelectric thin film;
a first metal electrode film; and
a second metal electrode film, wherein between the first and the second metal electrode films at least part of the piezoelectric thin film is sandwiched,
wherein the first metal electrode film has a hole structure including a plurality of holes, and
wherein the holes extend into the piezoelectric thin film, and have a depth equivalent to a combined thickness of the first metal electrode film and the piezoelectric thin film,
whereby the resonator has a resonant frequency at which an acoustic wave excited by the piezoelectric thin film cannot identify the holes of the hole structure individually.
2. The thin film piezoelectric bulk acoustic wave resonator according to claim 1 ,
wherein assuming that the wavelength of an elastic wave excited by the piezoelectric thin film is λ, the covering ratio σ of an opposite area of an electrode plane of the first metal electrode film facing an electrode plane of the second metal electrode film satisfies a condition 0<σ<1 for every 0.64 λ pitch.
3. The thin film piezoelectric bulk acoustic wave resonator according to claim 1 ,
wherein the holes are dispersed over an opposite area of an electrode plane of the first metal electrode film facing an electrode plane of the second metal electrode film.
4. The thin film piezoelectric bulk acoustic wave resonator according to claim 1 ,
wherein the piezoelectric thin film has at least one layer of piezoelectric thin film formed by a coating apparatus.
5. The thin film piezoelectric bulk acoustic wave resonator according to claim 2 ,
wherein the covering ratio σ of the first metal electrode film is fixed for every pitch P of 0.64 λ in the opposite area.
6. The thin film piezoelectric bulk acoustic wave resonator according to claim 2 ,
wherein the covering ratio a of the first metal electrode film is changed for every pitch P of 0.64 λ in the opposite area.
7. The thin film piezoelectric bulk acoustic wave resonator according to claim 1 ,
wherein both of the first metal electrode film and the second metal electrode film are formed by a coating apparatus, and both have electrical extraction lines.
8. A thin film piezoelectric bulk acoustic wave resonator having a laminated structure, said laminated structure comprising:
a piezoelectric thin film;
a first metal electrode film; and
a second metal electrode film, wherein between the first and the second metal electrode films at least part of the piezoelectric thin film is sandwiched,
wherein the first metal electrode film has a hole structure including a plurality of holes,
wherein, if a combined thickness of the first metal electrode film, the second metal electrode film, and the piezoelectric thin film is ht, the covering ratio σ of an opposite area of the first metal electrode film facing the second metal electrode film satisfies the condition 0<σ<1 for every 1.28 ht pitch, and
wherein the holes extend into the piezoelectric thin film, and have a depth equivalent to a combined thickness of the first metal electrode film and the piezoelectric thin film.
9. The thin film piezoelectric bulk acoustic wave resonator according to claim 8 ,
wherein the covering ratio σ of the first metal electrode film is fixed for every pitch P of 0.64 λ in the opposite area.
10. The thin film piezoelectric bulk acoustic wave resonator according to claim 8 ,
wherein the piezoelectric thin film has at least one layer of piezoelectric thin film formed with a coating apparatus, and
wherein both of the first metal electrode film and the second metal electrode film are formed with a coating apparatus, and both have electrical extraction lines.
11. A radio frequency filter comprising:
an input terminal;
an output terminal; and
at least one thin film piezoelectric bulk acoustic wave resonator connected to the input terminal and the output terminal,
wherein the thin film piezoelectric bulk acoustic wave resonator includes a laminated structure, said laminated structure comprising:
a piezoelectric thin film;
a first metal electrode film; and
a second metal electrode film, wherein between the first and the second metal electrode films at least part of the piezoelectric thin film is sandwiched,
wherein the first metal electrode film has a hole structure including a plurality of holes, and
wherein the holes extend into the piezoelectric thin film, and have a depth equivalent to a combined thickness of the first metal electrode film and the piezoelectric thin film,
whereby the resonator has a resonant frequency at which an acoustic wave excited by the piezoelectric thin film cannot identify the holes of the hole structure individually.
12. The radio frequency filter according to claim 11 , further comprising:
a first thin film piezoelectric bulk acoustic wave resonator including the thin film piezoelectric bulk acoustic wave resonator connected to a series arm for the input terminal and the output terminal; and
a second thin film piezoelectric bulk acoustic wave resonator connected to a parallel arm,
wherein assuming that the wavelength of an elastic wave excited by the piezoelectric thin film is λ, the covering ratio σ of an opposite area of the second metal electrode film facing the first metal electrode film satisfies the condition 0<σ<1 for every 0.64 λ pitch.
13. The radio frequency filter according to claim 12 , further comprising:
a first thin film piezoelectric bulk acoustic wave resonator including the thin film piezoelectric bulk acoustic wave resonator connected to a series arm for the input terminal and the output terminal; and
a second thin film piezoelectric bulk acoustic wave resonator including the thin film piezoelectric bulk acoustic wave resonator connected to a parallel arm,
wherein the covering ratio of the first thin film piezoelectric bulk acoustic wave resonator is less than that of the second thin film piezoelectric bulk acoustic wave resonator.
14. The radio frequency filter according to claim 11 , further comprising a plurality of the thin film piezoelectric bulk acoustic wave resonators connected to a parallel arm for the input terminal and the output terminal,
wherein the covering ratio of at least one of the plurality of thin film piezoelectric bulk acoustic wave resonators is different from that of the other thin film piezoelectric bulk acoustic wave resonators.
15. The radio frequency filter according to claim 11 , further comprising a plurality of the thin film piezoelectric bulk acoustic wave resonators connected to a series arm for the input terminal and the output terminal,
wherein at least one of the plurality of thin film piezoelectric bulk acoustic wave resonators has a covering ratio different from that of the other thin film piezoelectric bulk acoustic wave resonators.
16. The radio frequency filter according to claim 11 , further comprising:
a plurality of first thin film piezoelectric bulk acoustic wave resonators connected to a series arm for the input terminal and the output terminal; and
a plurality of second thin film piezoelectric bulk acoustic wave resonators connected to multiple parallel arms,
wherein all of the first thin film piezoelectric bulk acoustic wave resonators connected to the series arm are the thin film piezoelectric bulk acoustic wave resonators.
17. The radio frequency filter according to claim 16 ,
wherein all of the second thin film piezoelectric bulk acoustic wave resonators are the thin film piezoelectric bulk acoustic wave resonators, and
wherein the covering ratio of the first thin film piezoelectric bulk acoustic wave resonators is less than that of the second thin film piezoelectric bulk acoustic wave resonators.
18. The radio frequency filter according to claim 17 ,
wherein the covering ratio of at least one of the second thin film piezoelectric bulk acoustic wave resonators differs from that of the other second thin film piezoelectric bulk acoustic wave resonators.