IP Library › Granted Patent US 7,498,507
Granted Patent B2
US 7,498,507 · App. 11/081,986 · Granted Mar 3, 2009

Device for solid state thermal transfer and power generation

Assignee: General Electric Company
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Quick Facts
Patent No.
US 7,498,507
App. No.
11/081,986
Granted
Mar 3, 2009
Kind
B2
Abstract

A solid state thermal transfer device includes first and second electrically conductive substrates that are positioned opposite from one another. The solid state thermal transfer device also includes a sealing layer disposed between the first and second electrically conductive substrates and a plurality of hollow structures having a conductive material, wherein the plurality of hollow structures is contained by the sealing layer between the first and second electrically conductive substrates.

Claims (27)

1. A solid state thermal transfer device, comprising:

first and second electrically conductive substrates that are positioned opposite from one another;

a sealing layer disposed between the first and second electrically conductive substrates; and

a plurality of hollow structures having a conductive material, wherein the plurality of hollow structures is contained by the sealing layer between the first and second electrically conductive substrates,

wherein the sealing layer comprises a plurality of hollow shapes, and multiple hollow structures are disposed within each of the plurality of hollow shapes between the first and second electrically conductive substrates.

2. The solid state thermal transfer device of claim 1 , wherein the hollow structures comprise a coating of the conductive material.

3. The solid state thermal transfer device of claim 2 , wherein the hollow structures comprise hollow glass spheres.

4. The solid state thermal transfer device of claim 1 , wherein the conductive material comprises an electrically conductive material or a thermoelectric material.

5. The solid state thermal transfer device of claim 1 , further comprising an electrical barrier layer disposed between the first and second electrically conductive substrates on the first or second electrically conductive substrates.

6. The solid state thermal transfer device of claim 1 , wherein the plurality of hollow structures are disposed in a plurality of layers between the first and second electrically conductive substrates.

7. The solid state thermal transfer device of claim 6 , further comprising another electrically conductive substrate disposed between successive layers of the plurality of layers of the hollow structures.

8. The solid state thermal transfer device of claim 1 , wherein the device is configured to generate power by substantially maintaining a temperature gradient between the first and second electrically conductive substrates.

9. The solid state thermal transfer device of claim 1 , wherein introduction of current flow between the first and second electrically conductive substrates enables heat transfer between the first and second electrically conductive substrates via a flow of electrons though the plurality of hollow structures between the first and second electrically conductive substrates.

10. The solid state thermal transfer device of claim 9 , wherein the thermal transfer device is configured to cool a refrigeration system or an air conditioning system or a microelectronic system.

11. The solid state thermal transfer device of claim 1 , wherein the sealing layer comprises glasses, or thermoplastics, or polymer resins, or metals, or solders.

12. The solid state thermal transfer device of claim 1 , wherein the conductive material comprises a thermoelectric material including silicon germanium, or bismuth antimony, or lead telluride, or bismuth telluride, or any combination thereof.

13. The solid state thermal transfer device of claim 1 , wherein the plurality of hollow structures comprises deformed hollow structures configured to provide a substantially high conductivity of the device.

14. A solid state thermal transfer device, comprising:

first and second thermally and electrically conductive substrates that are positioned opposite from one another, wherein the first and second thermally and electrically conductive substrates are each substantially flat;

an electrical barrier layer disposed between the first and second thermally and electrically conductive substrates on the first or second thermally and electrically conductive substrates;

a sealing layer disposed between the first and second thermally and electrically conductive substrates; and

a plurality of hollow structures having an electrically conductive material, wherein the plurality of hollow structures is contained by the sealing layer between the first and second thermally and electrically conductive substrates,

wherein the sealing layer comprises a plurality of hollow shapes, and multiple hollow structures are disposed within each of the plurality of hollow shapes between the first and second thermally and electrically conductive substrates.

15. The solid state thermal transfer device of claim 14 , wherein the first or second thermally and electrically conductive substrate comprises a doped n-type silicon wafer or a doped p-type silicon wafer.

16. The solid state thermal transfer device of claim 14 , wherein the electrical barrier layer comprises an oxide, or a nitride, or a silica-based aerogel, or a polymer, or any combination thereof.

17. The solid state thermal transfer device of claim 14 , further comprising a low work function material disposed on the electrical barrier layer.

18. The solid state thermal transfer device of claim 14 , wherein the device is configured to cool, or to heat, or to generate power.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 13, 2016
From: GENERAL ELECTRIC COMPANY
To: HAIER US APPLIANCE SOLUTIONS, INC.
Reel/Frame 038965/0860 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 16, 2005
From: WEAVER, STANTON EARL JR.; WOJNAROWSKI, ROBERT JOHN
To: GENERAL ELECTRIC COMPANY
Reel/Frame 016393/0827 →
Continuity (1)
Related Publication 20060207643A1 · Sep 21, 2006