Image sensor with floating diffusion gate capacitor
Pixel cells are provided which employ a gate capacitor associated with the floating diffusion node to selectively increase the storage capacity of the floating diffusion node. The gate capacitor can be formed at the same time as the same process steps used to form other gates of the pixel cells. The inherent capacity of the storage node alone may be sufficient under low light conditions. Higher light conditions may result in selective activation of the gate capacitor, thus increasing the capacity of the storage node with the additional capacity provided by the gate capacitor. The invention produces high dynamic range and high output signal without charge sharing or lag output signal. Methods of forming such pixel cells can be applied in CMOS and CCD imaging devices, image pixel arrays in CMOS and CCD imaging devices, and CMOS and CCD imager systems.
1. An imager comprising:
an array of pixels at a surface of a substrate, at least one pixel comprising a photosensing region for generating charge in response to incident light;
a first transistor having a gate on the substrate and adjacent the photosensing region, the first transistor for transferring the generated charge to a floating diffusion region;
a second transistor having a gate on a side of the first transistor gate opposite the photosensing region for resetting the floating diffusion region to a predetermined voltage level, the floating diffusion region being between the first and second transistor gates; and
at least one gate capacitor switchably operable to increase a capacitance of the floating diffusion region, the gate capacitor being located at least partially over the floating diffusion region.
2. The imager of claim 1 , wherein the gate capacitor is over a portion of an isolation region.
3. The imager of claim 2 , wherein the first transistor, the second transistor, the floating diffusion region and the gate capacitor are included in the at least one pixel cell.
4. The imager of claim 2 , wherein the at least one pixel is part of a charge coupled device register.
5. A processor system, comprising:
a processor; and
an imager coupled to the processor, the imager comprising:
an array of pixels at a surface of a substrate, at least one pixel comprising:
a photosensing region for generating charge in response to incident light;
a first transistor having a gate on the substrate and adjacent the photosensing region, the first transistor for transferring the generated charge to a floating diffusion region;
a second transistor having a gate on a side of the first transistor gate opposite the photosensing region for resetting the floating diffusion region to a predetermined voltage level, the floating diffusion region being between the first and second transistor gates; and
at least one gate capacitor switchably operable to increase a capacitance of the floating diffusion region, the gate capacitor being located at least partially over the floating diffusion region.
6. A processor system, comprising:
a processor;
an imager coupled to the processor, the imager comprising:
an array of pixels at a surface of a substrate, at least one pixel comprising:
a photosensing region for generating charge in response to incident light;
a first transistor having a gate on the substrate and adjacent the photosensing region, the first transistor for transferring the generated charge to a floating diffusion region;
a second transistor having a gate on a side of the first transistor gate opposite the photosensing region for resetting the floating diffusion region to a predetermined voltage level, the floating diffusion region being between the first and second transistor gates; and
at least one gate capacitor switchably operable to increase a capacitance of the floating diffusion region, the gate capacitor being located between the first and second transistor gates; and
timing and control circuitry for generating a timing signal to selectively operate the at least one gate capacitor.
7. The system of claim 5 , further including a third transistor having a gate on a side of the second transistor gate opposite the floating diffusion region for converting stored charge into a voltage.
8. An imager comprising:
an array of pixels at a surface of a substrate, at least one pixel comprising:
a photodiode;
a transfer transistor having a gate between the photodiode and a floating diffusion region for transferring charge generated by the photodiode to the floating diffusion region;
a reset transistor connected to the floating diffusion region; and
a gate capacitor directly connected between the floating diffusion region and a voltage source, the gate capacitor being switchably operable to increase a capacitance of the floating diffusion region.
9. The imager of claim 8 , wherein the gate capacitor is over a portion of an isolation region.
10. The imager of claim 8 , wherein the at least one pixel is part of a charge coupled device register.
11. The imager of claim 8 , wherein the gate capacitor is located at least partially over the floating diffusion region.
12. The imager of claim 8 , wherein the voltage source is timing and control circuitry for generating a timing signal to selectively operate the at least one gate capacitor.
13. An imager comprising:
an array of pixels at a surface of a substrate, at least one pixel comprising:
a photodiode;
a transfer transistor having a gate between the photodiode and a floating diffusion region for transferring charge generated by the photodiode to the floating diffusion region;
a reset transistor connected to the floating diffusion region; and
a gate capacitor being switchably operable to increase a capacitance of the floating diffusion region, wherein an electrode of a lower capacitor plate of the gate capacitor is the floating diffusion region, wherein an upper capacitor plate of the gate capacitor is connected to a contact, and wherein the contact is connected to timing and control circuitry for generating a timing signal to selectively operate the at least one gate capacitor.
14. The imager of claim 13 , wherein the gate capacitor is over a portion of an isolation region.
15. The imager of claim 13 , wherein the at least one pixel is part of a charge coupled device register.