Multi-layered dielectric film of microelectronic device and method of manufacturing the same

1. A multi-layered dielectric film comprising:

a single component oxide layer; and

composite components oxide layers each of the composite components oxide layers being without a layered structure and formed along either side of the single component oxide layer, further wherein the composite components oxide layers consist of a composite components oxide represented by the general chemical formula M1 x M2 y O z , wherein M1 and M2 may be the same or different components selected from the group consisting of aluminum (Al), hafnium (Hf), zirconium (Zr), lanthanum (La), tantalum (Ta), strontium (Sr), barium (Ba), lead (Pb), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), yttrium (Y), and manganese (Mn), and wherein x, y and z have numerical values that denote the stoichiometric ratio of M1, M2 and O.

2. The multi-layered dielectric film of claim 1 , wherein the single component oxide layer has a higher dielectric constant than that of the composite components oxide layers.

3. The multi-layered dielectric film of claim 1 , wherein the single component oxide layer comprises a single component oxide wherein the component is selected from the group consisting of aluminum (Al), hafnium (Hf), zirconium (Zr), lanthanum (La), silicon (Si), tantalum (Ta), strontium (Sr), barium (Ba), lead (Pb), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), yttrium (Y), and manganese (Mn).

4. The multi-layered dielectric film of claim 3 , wherein the single component oxide layer comprises tantalum oxide.

5. The multi-layered dielectric film of claim 1 wherein at least one of the composite components oxide layers comprises at least one of a composite components oxide selected from the group consisting of Al x Hf y O z , Al x Ta y O z , Hf x Ta y O z , Hf x Ti y O z , Al x Ti y O z , Zr x Ta y O z , and Zr x Ti y O z .

6. The multi-layered dielectric film of claim 1 wherein at least one of the composite components oxide layers comprises Al x Hf y O z .

7. The multi-layered dielectric film of claim 1 wherein each of the composite components oxide layers has a dielectric constant (ε) in the range of 9<ε<30.

8. The multi-layered dielectric film of claim 1 , wherein at least one of the composite components oxide layers formed along either side of the single component oxide layer is thermally treated.

9. The multi-layered dielectric film of claim 1 , wherein at least one of the composite components oxide layers formed along either side of the single component oxide layer comprises components wherein at least one is the same component as in the single component oxide layer.

10. The multi-layered dielectric film of claim 1 , wherein at least one of the composite components oxide layers formed along either side of the single component oxide layer comprises different components than the component of the single component oxide layer.

11. Microelectric device comprising a multi-layered dielectric film according to claim 1 as a dielectric film for a capacitor.

12. A capacitor comprising:

a lower electrode;

a multi-layered dielectric film including composite components oxide layers made of Al x Hf y O z , wherein x, y and z have numerical values that denote the stoichiometric ratio of Al, Hf and O, formed along either side of a single component oxide layer made of a tantalum oxide, said multi-layered dielectric film being formed on the lower electrode; and

an upper electrode formed on the multi-layered dielectric film.

13. The capacitor of claim 12 , wherein at least one of the composite components oxide layers has a dielectric constant (ε) in the range of 9<ε<30.

14. The capacitor of claim 12 , wherein the upper electrode and the lower electrode are each made of TiN.