Method for manufacturing semiconductor device
The present invention relates to a method for manufacturing a semiconductor device, comprising: forming a metal interconnect on a substrate; forming a refractory metal layer containing titanium (Ti) or tantalum (Ta) on a surface of the metal interconnect; forming an insulating interlayer so as to cover the refractory metal layer; selectively etching the insulating interlayer with an etchant gas containing an organic fluoride to form a hole, in which the refractory metal layer is exposed; treating an interior of the hole with an organic chemical solution to remove fluorinated compounds of Ti or Ta while leaving fluorocarbons on the surface of the refractory metal layer, the fluorinated compounds of Ti or Ta and the fluorocarbons being created during the etching step and present in the interior of the hole; and performing plasma-treatment for the interior of said hole to remove the fluorocarbon.
1. A method for manufacturing a semiconductor device, comprising:
forming a metal interconnect on a substrate;
forming a refractory metal layer containing titanium (Ti) or tantalum (Ta) on a surface of said metal interconnect;
forming an insulating interlayer so as to cover said refractory metal layer;
selectively etching said insulating interlayer with an etchant gas containing an organic fluoride to form a hole, in which the said refractory metal layer is exposed;
treating an interior of said hole with an organic chemical solution to remove fluorinated compounds of Ti or Ta while leaving fluorocarbons on the surface of said refractory metal layer, said fluorinated compounds of Ti or Ta and said fluorocarbons being generated during said etching step and present in the interior of said hole; and
performing plasma-treatment for the interior of said hole to remove the fluorocarbon.
2. The method for manufacturing the semiconductor device according to claim 1 , further comprising forming an electrically conducting film in said hole to form a coupling plug that is coupled to said metal interconnect.
3. The method for manufacturing the semiconductor device according to claim 1 , wherein said refractory metal layer is a Ti-containing layer, said organic chemical solution is capable of removing a fluorinated compound of Ti, and said organic chemical solution is lower in a removing rate of fluorocarbon than said fluorinated compound of Ti.
4. The method for manufacturing the semiconductor device according to claim 1 , wherein said organic chemical solution contain substantially no water.
5. The method for manufacturing the semiconductor device according to claim 1 , wherein said organic chemical solution is propylene glycol monomethyl ether acetate (PGMEA).
6. The method for manufacturing the semiconductor device according to claim 1 , wherein said organic chemical solution is butyl acetate.