Sputtering target, optical thin film and manufacturing method thereof using the sputtering target, and optical recording medium
A sputtering target contains Si and C as its major components and includes a texture in which a Si phase continuously exists in a net shape in gaps among SiC crystal grains. An average diameter of the Si phase is controlled to 1000 nm or less. The sputtering target is sputtered in an oxygen-containing gas, thereby depositing an optical thin film containing Si and O as its major components, and a third element other than the major components, a total amount of the third element being within a range from 10 to 2000 ppm.
1. A sputtering target containing silicon (Si) and carbon (C) as major components, comprising:
a texture having silicon carbide (SiC) crystal grains and a silicon (Si) phase which continuously exists in a net shape in gaps among the silicon carbide (SiC) crystal grains and whose average diameter is 1000 nm or less,
wherein a third element other than the major components is contained in the sputtering target, a total amount of the third element being within a range from 10 to 2000 ppm.
2. The sputtering target as set forth in claim 1 ,
wherein a content ratio of the Si (silicon) phase in the sputtering target is within a range from 5 mass % to 50 mass %.
3. The sputtering target as set forth in claim 1 ,
wherein the sputtering target comprises a sintered body having the texture.
4. The sputtering target as set forth in claim 1 ,
wherein the sputtering target comprises a sintered body having the texture and formed by a reactive sintering.
5. The sputtering target as set forth in claim 1 ,
wherein porosity of the sputtering target is 5% or less.
6. The sputtering target as set forth in claim 1 ,
wherein a bending strength of the sputtering target is 500 MPa or more.
7. The sputtering target as set forth in claim 1 ,
wherein the third element is a metal element functioning as a sintering aid of silicon carbide (SiC).
8. The sputtering target as set forth in claim 1 ,
wherein the third element is at least one selected from aluminum (Al), iron (Fe), zirconium (Zr), and tin (Sn).
9. The sputtering target as set forth in claim 1 ,
wherein the sputtering target is used for depositing a thin film containing silicon (Si) and oxygen (O) as major components.
10. A sputtering target including silicon (Si) and carbon (C) as major components, the sputtering target comprising:
a texture including silicon carbide (SiC) crystal grains and a silicon (Si) phase in gaps among the silicon carbide (SiC) crystal grains and whose average diameter is 1000 nm or less,
wherein a third element other than the major components is included in the sputtering target, a total amount of the third element being within a range from 10 to 2000 ppm.