Semiconductor integrated circuit having improved power supply wiring
In a semiconductor integrated circuit including a plurality of cells, a supplementary power-supply wire is disposed between a lattice-shaped upper power-supply wire and a lower cell power-supply wire for cases in which power is supplied from the upper power-supply wire to the lower cell power-supply wire. The supplementary power-supply wire and the lower cell power-supply wire are connected by two vias. The supplementary power-supply wire and the upper power-supply wire are connected by a single via. Current from the supplementary power-supply wire is divided by the two vias and then supplied to the lower cell power-supply wire. Therefore, when power is supplied from the upper power-supply wire to the lower cell power-supply wire, current concentration at the connection points of the lower cell power-supply wire to the vias is decreased, thereby reducing wire breaks caused by EM (electro migration).
1. A semiconductor integrated circuit including a plurality of cells, the circuit comprising:
a cell power-supply wire formed for the cells; and
a supplementary power-supply wire disposed above the cell power-supply wire,
wherein the cell power-supply wire and the supplementary power-supply wire are connected with each other by at least two vias;
power is supplied from the supplementary power-supply wire to the cell power-supply wire through the at least two vias;
an upper power-supply wire is disposed above the supplementary power-supply wire;
the upper power-supply wire and the supplementary power-supply wire are connected with each other by a single via;
power is supplied from the upper power-supply wire to the supplementary power-supply wire through the singe via; and
the upper power-supply wire is a lattice-shaped power-supply wire arranged in a lattice.
2. The semiconductor integrated circuit of claim 1 , wherein the supplementary power-supply wire has a larger wire width than the cell power-supply wire.
3. The semiconductor integrated circuit of claim 1 , wherein the two vias that connect the cell power-supply wire and the supplementary power-supply wire are disposed in opposite directions with respect to the single via that connects the supplementary power-supply wire and the upper power-supply wire, the two vias being located at a given distance from the single via.
4. The semiconductor integrated circuit of claim 1 , wherein at least a predefined number of cells is located between the two vias that connect the cell power-supply wire and the supplementary power-supply wire.
5. The semiconductor integrated circuit of claim 1 , wherein at least a predefined number of intra-cell power-supply wires, which are disposed within the tells and connected to the cell power-supply wire, is located between the two vias that connect the cell power-supply wire and the supplementary power-supply wire.
6. The semiconductor integrated circuit of claim 1 , wherein between the two vias that connect the cell power-supply wire and the supplementary power-supply wire, density of current flowing through the cell power-supply wire is equal to or less than a predetermined value.