Piezoelectric thin-film element
A piezoelectric thin-film element formed with a niobate lithium potassium sodium thin-film having a well-developed Perovskite structure and having an excellent piezoelectric characteristic. The piezoelectric thin-film 4 is a dielectric thin-film composed of a alkaline-niobic oxide represented by (Na x1 K y1 Li z1 ) NbO 3 (0<x 1 <1, 0<y 1 <1, 0≦z 1 <1, x 1 +y 1 +z 1 =1) and having a Perovskite structure, and the base dielectric thin film 6 composed of a alkaline-niobic oxide represented by (Na x2 K y2 Li z2 ) NbO 3 (0<x 2 <1, 0<y 2 <1, 0≦z 2 <1, x 2 +y 2 +z 2 =1) and having a Perovskite structure is provided between the lower electrode 3 and the piezoelectric thin-film 4.
1. A piezoelectric thin-film element having a lower electrode, a piezoelectric thin-film and an upper electrode arranged on a substrate, wherein said piezoelectric thin-film is a dielectric thin-film composed of a alkaline-niobic oxide represented by (Na x1 K y1 Li z1 ) NbO 3 (0<x 1 <1, 0<y 1 <1, 0≦z 1 <1, x 1 +y 1 +z 1 =1) and having a Perovskite structure, and a base dielectric thin film composed of a alkaline-niobic oxide represented by (Na x2 K y2 Li z2 ) NbO 3 (0<x 2 <1, 0<y 2 <1, 0≦z 2 <1, x 2 +y 2 +z 2 =1) and having a Perovskite structure is provided between said lower electrode and said piezoelectric thin-film.
2. The piezoelectric thin-film element of claim 1 , wherein a potassium composition of said base dielectric thin-film, y 2 , is 0.4 or smaller, and a potassium composition of said piezoelectric thin-film, y 1 ,is 0.4 or larger.
3. A piezoelectric thin-film element having a lower electrode, a piezoelectric thin-film and an upper electrode arranged on a substrate, wherein said piezoelectric thin-film is a dielectric thin-film composed of a alkaline-niobic oxide represented by (Na x K y Li z ) NbO 3 (0<x<1, 0<y<1, 0≦z<1, x+y+z=1)and having a Perovskite structure, and a potassium composition of said piezoelectric thin-film, y, increases in a thickness direction of said piezoelectric thin-film from an area neighboring the lower electrode towards the upper electrode.
4. The piezoelectric thin-film element of claim 3 , wherein said potassium composition of said piezoelectric thin-film, y, may increase in the range below 0.4 and over 0.4.
5. The piezoelectric thin-film element of claim 1 , wherein said piezoelectric thin-film has a Perovskite structure with a crystalline structure of tetragonal system or orthorhombic system, and its crystal is polycrystalline or monocrystalline and has a dominant orientation in either of (001) crystal plane, (100) crystal plane, (010) crystal plane and (111) crystal plane.
6. The piezoelectric thin-film element of claim 2 , wherein said piezoelectric thin-film has a Perovskite structure with a crystalline structure of tetragonal system or orthorhombic system, and its crystal is polycrystalline or monocrystalline and has a dominant orientation in either of (001) crystal plane, (100) crystal plane, (010) crystal plane and (111) crystal plane.
7. The piezoelectric thin-film element of claim 3 , wherein said piezoelectric thin-film has a Perovskite structure with a crystalline structure of tetragonal system or orthorhombic system, and its crystal is polycrystalline or monocrystalline and has a dominant orientation in either of (001) crystal plane, (100) crystal plane, (010) crystal plane and (111) crystal plane.
8. The piezoelectric thin-film element of claim 4 , wherein said piezoelectric thin-film has a Perovskite structure with a crystalline structure of tetragonal system or orthorhombic system, and its crystal is polycrystalline or monocrystalline and has a dominant orientation in either of (001) crystal plane, (100) crystal plane, (010) crystal plane and (111) crystal plane.
9. The piezoelectric thin-film element of claim 6 , wherein said substrate may be either of a magnesium oxide substrate, a silicon substrate, a glass substrate, a stainless substrate, a copper substrate and an aluminum substrate.
10. The piezoelectric thin-film element of claim 8 , wherein said substrate may be either of a magnesium oxide substrate, a silicon substrate, a glass substrate, a stainless substrate, a copper substrate and an aluminum substrate.
11. The piezoelectric thin-film element of claim 1 , wherein a potassium composition of said base dielectric thin-film, y 2 , is smaller than a potassium composition of said piezoelectric thin-film, y 1 .
12. The piezoelectric thin-film element of claim 11 , wherein a potassium composition of said piezoelectric thin-film, y 1 , is about 0.5.
13. The piezoelectric thin-film element of claim 3 , wherein potassium composition of said piezoelectric thin-film, y, gradually increases in a thickness direction of said piezoelectric thin-film from an area neighboring the lower electrode towards the upper electrode.
14. The piezoelectric thin-film element of claim 3 , wherein potassium composition of said piezoelectric thin-film, y, continuously increases in a thickness direction of said piezoelectric thin-film from an area neighboring the lower electrode towards the upper electrode.
15. The piezoelectric thin-film element of claim 3 , wherein potassium composition of said piezoelectric thin-film, y, step-wise increases in a thickness direction of said piezoelectric thin-film from an area neighboring the lower electrode towards the upper electrode.
16. The piezoelectric thin-film element of claim 3 , wherein an overall potassium composition of this piezoelectric thin-film, y, is larger than 0.4.
17. The piezoelectric thin-film element of claim 3 , wherein an overall potassium composition of this piezoelectric thin-film, y, is about 0.5.