CMOS image sensor and method for manufacturing the same

1. A CMOS image sensor, comprising:

an interlayer dielectric layer formed on a semiconductor substrate;

a plurality of color filter isolation layers formed on the interlayer dielectric layer;

isolation layer spacers having a predetermined thickness formed at sidewalls of the plurality of color filter isolation layers;

a color filter layer comprising a first color filter, a second color filter, and a third color filter formed on the interlayer dielectric layer, wherein a portion of the first color filter and a portion of the second color filter are formed on a top surface of one of the plurality of color filter isolation layers, and wherein a portion of the second color filter and a portion of the third color filter are formed on a top surface of another of the plurality of color filter isolation layers; and

microlenses formed on the color filter layer.

2. The CMOS image sensor according to claim 1 , wherein the plurality of color filter isolation layers comprise USG (Undoped Silicate Glass).

3. The CMOS image sensor according to claim 1 , wherein the isolation layer spacers comprise USG.

4. The CMOS image sensor according to claim 1 , further comprising a planarization layer formed on the color filter layer between the color filter layer and the microlenses.

5. The CMOS image sensor according to claim 1 , wherein the first color filter is a red (R) color filter layer, the second color filter is a blue (B) color filter layer, and the third color filter is a green (G) color filter layer.

6. The CMOS image sensor according to claim 1 , wherein each color filter of the color filter layer has a same height.

7. The CMOS image sensor according to claim 1 , wherein the interlayer dielectric layer comprises:

a first interlayer dielectric layer formed on the semiconductor substrate; and

a second interlayer dielectric layer formed on the first interlayer dielectric layer and having a trench formed at a predetermined area of the second interlayer dielectric layer,

wherein the color filter layer is formed on the second interlayer dielectric layer and at least a portion of the color filter layer is formed in the trench.

8. A CMOS image sensor comprising:

an interlayer dielectric layer formed on a semiconductor substrate;

color filter isolation layers formed on the interlayer dielectric layer and spaced apart from each other by a predetermined interval so as to correspond with a gap between photodiodes formed on the semiconductor substrate, wherein the color filter isolation layers comprise an insulating material;

a trench having a predetermined depth formed in the interlayer dielectric layer between two adjacent color filter isolation layers;

a blue color filter layer formed in the trench;

a green color filter layer and a red color filter layer formed on the interlayer dielectric layer and separated from each other and the blue color filter layer by the color filter isolation layers; and

microlenses formed on the blue color filter layer, green color filter layer, and red color filter layer.

9. The CMOS image sensor according to claim 8 , further comprising a planarization layer formed on the blue, green, and red color filter layers.

10. The CMOS image sensor according to claim 8 , wherein the color filter isolation layers and the blue, green, and red color filter layers are formed to the same thickness height above the interlayer dielectric layer.

11. The CMOS image sensor according to claim 8 , further comprising isolation layer spacers formed on sidewalls of the color filter isolation layers.

12. The CMOS image sensor according to claim 11 , wherein the color filter isolation layers and the isolation layer spacers comprise USG.

13. A method for manufacturing a CMOS image sensor, the method comprising:

forming an interlayer dielectric layer on a semiconductor substrate;

forming color filter isolation layers on the interlayer dielectric layer spaced apart from each other by a predetermined interval, wherein the color filter isolation layers comprise an insulating material;

forming a trench having a predetermined depth from a surface of the interlayer dielectric layer by selectively removing a predetermined area of the interlayer dielectric layer between two adjacent color filter isolation layers;

forming a blue color filter layer in the trench;

forming a green color filter layer and a red color filter layer on the interlayer dielectric layer;

planarizing a top portion of the blue, green, and red color filter layers, wherein a top surface of the color filter isolation layers serves as an end point of the planarization process; and

forming microlenses on the blue, green, and red color filter layers.

14. The method according to claim 13 , wherein forming the color filter isolation layers comprises:

depositing USG on the interlayer dielectric layer, and

selectively patterning the USG to form a USG pattern spaced apart by the predetermined interval.

15. The method according to claim 13 , further comprising forming isolation layer spacers comprised of USG at sidewalls of the color filter isolation layers after forming the color filter isolation layers.

16. The method according to claim 13 , further comprising forming a planar layer on the blue, green, and red color filter layers after planarizing the top portion of the blue, green, and red color filter layers.