IP Library › Granted Patent US 7,560,853
Granted Patent B2
US 7,560,853 · App. 11/675,811 · Granted Jul 14, 2009

Thin film piezoelectric resonator, method of manufacturing the same, and filter including the same

Assignee: Kabushiki Kaisha Toshiba
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Quick Facts
Patent No.
US 7,560,853
App. No.
11/675,811
Granted
Jul 14, 2009
Kind
B2
Abstract

A thin film piezoelectric resonator includes: a substrate having a cavity; a first dielectric layer provided on the substrate to cover the cavity; a second dielectric layer provided on the substrate and disposed in a peripheral region of the cavity, and having a thickness larger than the first dielectric layer; a first electrode provided on the first dielectric layer and above the cavity; a piezoelectric layer provided on the first electrode and disposed to extend to a region on the second dielectric layer; and a second electrode provided on the piezoelectric layer and above the first electrode.

Claims (40)

1. A thin film piezoelectric resonator comprising:

a substrate having a cavity;

a first dielectric layer provided on the substrate to cover the cavity;

a second dielectric layer provided on the substrate and disposed in a peripheral region of the cavity, and having a thickness larger than the first dielectric layer;

a first electrode provided on the first dielectric layer and above the cavity;

a piezoelectric layer provided on the first electrode and disposed to extend to a region on the second dielectric layer; and

a second electrode provided on the piezoelectric layer and above the first electrode.

2. The resonator according to claim 1 , wherein the first dielectric layer includes a first layer provided on the substrate except on the cavity, and a second layer provided on the first layer and the cavity.

3. The resonator according to claim 1 , wherein an upper surface of the second dielectric layer protrudes from the surface of the substrate.

4. The resonator according to claim 1 , wherein the second dielectric layer is disposed within a restricted region in the peripheral region of the cavity.

5. A thin film piezoelectric resonator comprising:

a substrate having a cavity;

a first dielectric layer provided on the substrate to cover the cavity;

a first electrode provided on the first dielectric layer and above the cavity;

a piezoelectric layer provided on the first electrode;

a second electrode provided on the piezoelectric layer and above the first electrode; and

a second dielectric layer provided between the substrate and the first dielectric layer in a peripheral region of an excitation portion including an overlapping region of the cavity, the first electrode, the piezoelectric layer, and the second electrode,

wherein the piezoelectric layer is disposed on the first dielectric layer and extends to a region on at least a part of the second dielectric layer.

6. The resonator according to claim 5 , wherein the second dielectric layer has a thickness larger than the first dielectric layer.

7. The resonator according to claim 5 , wherein an upper surface of the second dielectric layer protrudes from the surface of the substrate.

8. The resonator according to claim 5 , wherein the second dielectric layer is disposed within a restricted region in the peripheral region of the excitation portion.

9. A filter comprising:

a substrate including a plurality of cavities disposed to be spaced apart from one another;

a first dielectric layer provided on the substrate to cover the plurality of cavities;

a second dielectric layer provided on the substrate and disposed in peripheral regions of the plurality of cavities, and having a thickness larger than the first dielectric layer;

a plurality of first electrodes provided on the first dielectric layer and above the plurality of cavities, respectively;

a piezoelectric layer provided on the plurality of first electrodes and disposed to extend to a region on at least a part of the second dielectric layer; and

a plurality of second electrodes provided on the piezoelectric layer and above the plurality of first electrodes, respectively.

10. The filter according to claim 9 , wherein the first dielectric layer includes a first layer provided on the substrate except on the cavity, and a second layer provided on the first layer and the cavity.

11. The filter according to claim 9 , wherein an upper surface of the second dielectric layer protrudes from the surface of the substrate.

12. A filter comprising:

a substrate including a plurality of cavities disposed to be spaced apart from one another;

a first dielectric layer provided on the substrate to cover the plurality of cavities;

a plurality of first electrodes provided on the first dielectric layer and above the plurality of cavities, respectively;

a piezoelectric layer provided on the plurality of first electrodes;

a plurality of second electrodes provided on the piezoelectric layer and above the plurality of first electrodes, respectively; and

a second dielectric layer provided between the substrate and the first dielectric layer in peripheral regions of a plurality of excitation portions, each of which includes an overlapping region of the cavity, the first electrode, the piezoelectric layer, and the second electrode,

wherein the piezoelectric layer is disposed on the first dielectric layer and extends to a region on at least a part of the second dielectric layer.

13. The filter according to claim 12 , wherein the second dielectric layer has a thickness larger than the first dielectric layer.

14. The filter according to claim 12 , wherein an upper surface of the second dielectric layer protrudes from the surface of the substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 30, 2007
From: SANO, KENYA; ITAYA, KAZUHIKO; OHARA, RYOICHI; KAWAKUBO, TAKASHI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 019228/0183 →
Priority Claims (1)
JP 2006-042466 · Feb 20, 2006 · national
Continuity (1)
Related Publication 20070194662A1 · Aug 23, 2007