Semiconductor integrated circuit device wherein during data write a potential transferred to each bit line is changed in accordance with program order of program data

1. A semiconductor integrated circuit device comprising:

nonvolatile semiconductor memory cells, each memory cell being able to store at least a first bit and a second bit based on threshold voltage state;

bit lines each connected to one end of the nonvolatile semiconductor memory cells;

a data circuit connected to the bit lines to temporarily store program data for the nonvolatile semiconductor memory cells;

the data circuit supplying, during a data program operation, a first program potential, a second program potential, or a third program potential to each bit line;

the first program potential, which is lower than the second program potential, being supplied until the threshold voltage of the nonvolatile memory cell surpasses a first-pass level less than a second-pass level;

the second program potential, which is lower than the third program potential, being supplied when the threshold voltage of the nonvolatile memory cell is between the first-pass level and the second-pass level;

the third program potential being supplied after the threshold voltage of the nonvolatile memory cell surpasses the second-pass level; and

the second program potential for the first bit being different from the second program potential for the second bit.

2. The device according to claim 1 , wherein the nonvolatile semiconductor memory cell includes a NAND type flash memory cell unit.

3. A semiconductor integrated circuit device comprising:

nonvolatile semiconductor memory cells;

bit lines each connected to one end of the nonvolatile semiconductor memory cells, the memory cells being programmed with at least two different program methods;

a data circuit connected to the bit lines to temporarily store program data for the nonvolatile semiconductor memory cells;

the data circuit supplying, during a data program operation, a first program potential, a second program potential, or a third program potential to each bit line;

the first program potential, which is lower than the second program potential, being supplied until a threshold voltage of the nonvolatile memory cell surpasses a first-pass level less than a second-pass level;

the second program potential, which is lower than the third program potential, being supplied when the threshold voltage of the nonvolatile memory cell is between the first-pass level and the second-pass level;

the third program potential being supplied after the threshold voltage of the nonvolatile memory cell surpasses the second-pass level; and

the second program potentials for the two program methods being different.

4. The device according to claim 3 , wherein the two program methods are either quick-pass-write or modified-quick-pass-write.

5. The device according to claim 3 , wherein the nonvolatile semiconductor memory cell includes a NAND type flash memory cell unit.

6. A semiconductor integrated circuit device comprising:

nonvolatile semiconductor memory cells;

bit lines each connected to one end of the nonvolatile semiconductor memory cells, the bit lines having a first group and a second group;

a data circuit connected to the bit lines to temporarily store program data for the nonvolatile semiconductor memory cells, the data circuit supplying, during a data program operation, a first program potential, a second program potential, or a third program potential to each bit line;

the first program potential, which is lower than the second program potential, being supplied until a threshold voltage of the nonvolatile memory cell surpasses a first-pass level less than a second-pass level;

the second program potential, which is lower than the third program potential, being supplied when the threshold voltage of the nonvolatile memory cell is between the first-pass level and the second-pass level;

the third program potential being supplied after the threshold voltage of the nonvolatile memory cell surpasses the second-pass level; and

the nonvolatile memory cells connected to the first group of the bit lines and the nonvolatile memory cells connected to the second group of the bit lines being not programmed simultaneously and the second program potential for the first group and the second program potential for the second group being different.

7. The device according to claim 6 , wherein the first group of the bit lines and the second group of the bit lines are either even bit lines or odd bit lines.

8. The device according to claim 6 , wherein the nonvolatile semiconductor memory cell includes a NAND type flash memory cell unit.