The present invention includes an IC card that can realize high function without increasing the size of an IC chip, and that can realize cost reduction. The IC card has a first single crystal integrated circuit, a second integrated circuit, and a display device. The second integrated circuit and the display device are each formed from a thin film semiconductor film, over a plastic substrate, and the first single crystal integrated circuit is mounted on the plastic substrate so as to be electrically connected to the second integrated circuit.
1. A card comprising:
a plastic substrate;
a first single crystal integrated circuit mounted over the plastic substrate;
a second integrated circuit mounted over the plastic substrate;
a display device mounted over the plastic substrate; and
a covering material over the first single crystal integrated circuit and the second integrated circuit,
wherein the second integrated circuit and the display device each comprise a semiconductor element;
wherein the semiconductor element comprises a polycrystalline semiconductor film;
wherein the polycrystalline semiconductor film is used as a channel formation region of the semiconductor element;
wherein the display device is an active matrix type;
wherein the first single crystal integrated circuit comprises an analog circuit and a radio frequency circuit, and the second integrated circuit comprises a digital circuit;
wherein the semiconductor element is formed over an oxide film;
wherein the oxide film is bonded to the plastic substrate with an adhesive agent;
wherein the first single crystal integrated circuit is electrically connected to the second integrated circuit; and
wherein the covering material has an opening portion which is overlapped with the display device.
2. The card according to claim 1 , wherein the display device is a liquid crystal display device.
3. The card according to claim 1 , wherein the display device is a light emitting device.
4. The card according to claim 1 , wherein the first single crystal integrated circuit is mounted over the plastic substrate by a chip on glass method.
5. The card according to claim 1 , wherein a thickness of the second integrated circuit is 1 μm or more and 5 μm or less.
6. The card according to claim 1 , wherein a thickness of the card is 0.5 mm or more and 1.5 mm or less.
7. The card according to claim 1 ,
wherein the first single crystal integrated circuit is packed, and
wherein a mode of packaging is selected from the group consisting of Chip Size Package, Multi Chip Package, Dual In-line Package, Quad Flat Package, and Small Outline Package.
8. The card according to claim 1 , wherein the oxide film is a silicon oxide film.
9. The card according to claim 1 , wherein the oxide film is from 150 to 300 nm in a thickness.
10. The card according to claim 1 , wherein the adhesive agent is one selected from the group consisting of a reaction-curing adhesive agent, a thermal-curing adhesive agent, a photo-curing adhesive agent such as a UV curing adhesive agent, and an anaerobic adhesive agent.
11. The card according to claim 1 , wherein the first single crystal integrated circuit is electrically connected with an antenna coil.
12. A card comprising:
a plastic substrate;
a first single crystal integrated circuit mounted over the plastic substrate;
a second integrated circuit mounted over the plastic substrate;
a display device mounted over the plastic substrate; and
a covering material over the first single crystal integrated circuit and the second integrated circuit,
wherein the second integrated circuit and the display device each comprise a semiconductor element;
wherein the semiconductor element comprises a polycrystalline semiconductor film;
wherein the polycrystalline semiconductor film is used as a channel formation region of the semiconductor element;
wherein the display device is an active matrix type;
wherein the first single crystal integrated circuit comprises an analog circuit and a radio frequency circuit, and the second integrated circuit comprises a digital circuit;
wherein the first single crystal integrated circuit is electrically connected to the second integrated circuit;
wherein the semiconductor element is formed over an oxide film;
wherein the oxide film is bonded to the plastic substrate with an adhesive agent;
wherein the first single crystal integrated circuit includes an interface; and
wherein the covering material has an opening portion which is overlapped with the display device.
13. The card according to claim 12 wherein the display device is a liquid crystal display device.
14. The card according to claim 12 , wherein the display device is a light emitting device.
15. The card according to claim 12 , wherein the first single crystal integrated circuit is mounted over the plastic substrate by a chip on glass method.
16. The card according to claim 12 , wherein a thickness of the second integrated circuit is 1 μm or more and 5 μm or less.
17. The card according to claim 12 , wherein a thickness of the card is 0.5 mm or more and 1.5 mm or less.
18. The card according to claim 12 ,
wherein the first single crystal integrated circuit is packed, and
wherein a mode of packaging is selected from the group consisting of Chip Size Package, Multi Chip Package, Dual In-line Package, Quad Flat Package, and Small Outline Package.
19. The card according to claim claim 12 , wherein the oxide film is a silicon oxide film.
20. The card according to claim claim 12 , wherein the oxide film is from 150 to 300 nm in a thickness.
21. The card according to claim claim 12 , wherein the adhesive agent is one selected from the group consisting of a reaction-curing adhesive agent, a thermal-curing adhesive agent, a photo-curing adhesive agent such as a UV curing adhesive agent, and an anaerobic adhesive agent.
22. The card according to claim claim 12 , wherein the first single crystal integrated circuit is electrically connected with an antenna coil.
23. A card comprising:
a plastic substrate;
a first single crystal integrated circuit mounted over the plastic substrate;
a second integrated circuit mounted over the plastic substrate;
a display device mounted over the plastic substrate; and
a covering material over the first single crystal integrated circuit and the second integrated circuit,
wherein the second integrated circuit and the display device each comprise a semiconductor element;
wherein the semiconductor element comprises a polycrystalline semiconductor film;
wherein the polycrystalline semiconductor film is used as a channel formation region of the semiconductor element;
wherein the display device is an active matrix type;
wherein the first single crystal integrated circuit comprises an analog circuit and a radio frequency circuit, and the second integrated circuit comprises a digital circuit;
wherein the semiconductor element is formed over an oxide film;
wherein the oxide film is bonded to the plastic substrate with an adhesive agent;
wherein the first single crystal integrated circuit is electrically connected to the second integrated circuit;
wherein driving of the display device is controlled by the second integrated circuit; and
wherein the covering material has an opening portion which is overlapped with the display device.
24. The card according to claim 23 , wherein the display device is a liquid crystal display device.
25. The card according to claim 23 , wherein the display device is a light emitting device.
26. The card according to claim 23 , wherein the first single crystal integrated circuit is mounted over the plastic substrate by a chip on glass method.
27. The card according to claim 23 , wherein a thickness of the second integrated circuit is 1 μm or more and 5 μm or less.
28. The card according to claim 23 , wherein a thickness of the card is 0.5 mm or more and 1.5 mm or less.
29. The card according to claim 23 ,
wherein the first single crystal integrated circuit is packed, and
wherein a mode of packaging is selected from the group consisting of Chip Size Package, Multi Chip Package, Dual In-line Package, Quad Flat Package, and Small Outline Package.
30. The card according to claim claim 23 , wherein the oxide film is a silicon oxide film.
31. The card according to claim claim 23 , wherein the oxide film is from 150 to 300 nm in a thickness.
32. The card according to claim claim 23 , wherein the adhesive agent is one selected from the group consisting of a reaction-curing adhesive agent, a thermal-curing adhesive agent, a photo-curing adhesive agent such as a UV curing adhesive agent, and an anaerobic adhesive agent.
33. The card according to claim claim 23 , wherein the first single crystal integrated circuit is electrically connected with an antenna coil.
34. A card comprising:
a plastic substrate;
a first single crystal integrated circuit mounted over the plastic substrate;
a second integrated circuit mounted over the plastic substrate;
a display device mounted over the plastic substrate; and
a covering material over the first single crystal integrated circuit and the second integrated circuit,
wherein the second integrated circuit and the display device each comprise a semiconductor element;
wherein the display device is an active matrix type;
wherein the first single crystal integrated circuit comprises an analog circuit and a radio frequency circuit, and the second integrated circuit comprises a digital circuit;
wherein the semiconductor element comprises a polycrystalline semiconductor film;
wherein the polycrystalline semiconductor film is used as a channel formation region of the semiconductor element;
wherein the semiconductor element is formed over an oxide film;
wherein the oxide film is bonded to the plastic substrate with an adhesive agent; wherein the first single crystal integrated circuit is electrically connected to the second integrated circuit;
wherein the first single crystal integrated circuit includes an interface;
wherein driving of the display device is controlled by the second integrated circuit; and
wherein the covering material has an opening portion which is overlapped with the display device.
35. The card according to claim 34 , wherein the display device is a liquid crystal display device.
36. The card according to claim 34 , wherein the display device is a light emitting device.
37. The card according to claim 34 , wherein the first single crystal integrated circuit is mounted over the plastic substrate by a chip on glass method.
38. The card according to claim 34 , wherein a thickness of the second integrated circuit is 1 μm or more and 5 μm or less.
39. The card according to claim 34 , wherein a thickness of the card is 0.5 mm or more and 1.5 mm or less.
40. The card according to claim 34 ,
wherein the first single crystal integrated circuit is packed, and
wherein a mode of packaging is selected from the group consisting of Chip Size Package, Multi Chip Package, Dual In-line Pack age, Quad Flat Package, and Small Outline Package.
41. The card according to claim 34 , wherein the oxide film is a silicon oxide film.
42. The card according to claim 34 , wherein the oxide film is from 150 to 300 nm in a thickness.
43. The card according to claim 34 , wherein the adhesive agent is one selected from the group consisting of a reaction-curing adhesive agent, a thermal-curing adhesive agent, a photo-curing adhesive agent such as a UV curing adhesive agent, and an anaerobic adhesive agent.
44. The card according to claim 34 , wherein the first single crystal integrated circuit is electrically connected with an antenna coil.
45. A card comprising:
a plastic substrate;
a first single crystal integrated circuit mounted over a concave portion of the plastic substrate;
a display device mounted over the plastic substrate; and
a second integrated circuit mounted over the plastic substrate,
wherein the second integrated circuit comprises a semiconductor element;
wherein the semiconductor element comprises a polycrystalline semiconductor film;
wherein the polycrystalline semiconductor film is used as a channel formation region of the semiconductor element;
wherein the display device is an active matrix type;
wherein the first single crystal integrated circuit comprises an analog circuit and a radio frequency circuit, and the second integrated circuit comprises a digital circuit;
wherein the semiconductor element is formed over an oxide film;
wherein the oxide film is bonded to the plastic substrate with an adhesive agent; and
wherein the first single crystal integrated circuit is electrically connected to the second integrated circuit.
46. The card according to claim 45 , wherein the first single crystal integrated circuit is mounted over the plastic substrate by a chip on glass method.
47. The card according to claim 45 , wherein a thickness of the second integrated circuit is 1 μm or more and 5 μm or less.
48. The card according to claim 45 , wherein a thickness of the card is 0.5 mm or more and 1.5 mm or less.
49. The card according to claim 45 ,
wherein the first single crystal integrated circuit is packed, and
wherein a mode of packaging is selected from the group consisting of Chip Size Package, Multi Chip Package, Dual In-line Pack age, Quad Flat Package, and Small Outline Package.
50. The card according to claim 45 , wherein the oxide film is a silicon oxide film.
51. The card according to claim 45 , wherein the oxide film is from 150 to 300 nm in a thickness.
52. The card according to claim 45 , wherein the adhesive agent is one selected from the group consisting of a reaction-curing adhesive agent, a thermal-curing adhesive agent, a photo-curing adhesive agent such as a UV curing adhesive agent, and an anaerobic adhesive agent.
53. The card according to claim 45 , wherein the first single crystal integrated circuit is electrically connected with an antenna coil.