Phase change memory devices and methods for manufacturing the same
Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device comprises a substrate. A dielectric layer is formed over the substrate and a phase change material layer is embedded in the dielectric layer. A first conductive electrode is also embedded in the dielectric layer to penetrate the phase change material layer and extends perpendicular to a top surface of the dielectric layer.
1. A phase change memory device, comprising:
a substrate;
a dielectric layer formed over the substrate;
a phase change material layer embedded in the dielectric layer; and
a first conductive electrode embedded in the dielectric layer, penetrating the phase change material layer and extending perpendicular to a top surface of the dielectric layer.
2. The phase change memory device as claimed in claim 1 , wherein the phase change material layer surrounds a part of the first conductive electrode along a circumstance of the first conductive electrode.
3. The phase change memory device as claimed in claim 1 , wherein the phase change material layer comprises chalcogenide materials.
4. The phase change memory device as claimed in claim 1 , wherein phase change material layer is disposed in the dielectric layer and extends in the dielectric layer along a direction horizontal to a top surface of the dielectric layer.
5. The phase change memory device as claimed in claim 1 , further comprising a first conductive layer disposed between the substrate and the dielectric layer, wherein the first conductive electrode connects the first conductive layer.
6. The phase change memory device as claimed in claim 5 , further comprising a second conductive layer disposed over the dielectric layer to electrically connect the phase change material layer.
7. The phase change memory device as claimed in claim 6 , further comprising a second conductive electrode disposed in the dielectric layer to electrically connect the phase change material layer and the second conductive layer.
8. The phase change memory device as claimed in claim 1 , further comprising an active device disposed over the substrate and covered by dielectric layer, wherein the first conductive electrode connects the active device.
9. The phase change memory device as claimed in claim 8 , wherein the active device is a transistor and the first conductive electrode connects a source/drain region of the transistor.
10. The phase change memory device as claimed in claim 9 , further comprising a conductive layer disposed over the dielectric layer to electrically connect the phase change material layer.
11. The phase change memory device as claimed in claim 6 , further comprising a second conductive electrode disposed in a second part of the dielectric layer to connect the phase change material layer with the conductive layer.
12. The phase change memory device as claimed in claim 11 , wherein the second conductive electrode penetrates the phase change material layer perpendicular to a top surface of the dielectric layer and the phase change material layer surrounds a part of the second conductive electrode along a circumstance of the second conductive electrode.