Electronic component having at least one vertical semiconductor power transistor
An electronic component includes a vertical semiconductor power transistor and a further semiconductor device arranged on the transistor to form a stack. The first vertical semiconductor power transistor has a semiconductor body having a first side and a second side and device structures, at least one first electrode positioned on the first side and at least one second electrode positioned on the second side. The semiconductor body further has at least one electrically conductive via. The via extends from the first side to the second side of the semiconductor body and is galvanically isolated from the device structures of the semiconductor body and from the first electrode and the second electrode.
1. An electronic component comprising two vertical semiconductor power transistors arranged in a stack, comprising:
a first vertical semiconductor power transistor comprising a semiconductor body having a first side and a second side and device structures, at least one first electrode positioned on the first side and at least one second electrode positioned on the second side, wherein the semiconductor body further comprises at least one electrically conductive via, the via extending from the first side to the second side of the semiconductor body and being galvanically isolated from the device structures of the semiconductor body and from the first electrode and the second electrode, and
a second vertical semiconductor power transistor comprising a semiconductor body having a first side and a second side and device structures, at least one first electrode and at least one control electrode positioned on the first side and at least one second electrode positioned on the second side, and
wherein the second vertical semiconductor power transistor is mounted on the second side of the first vertical semiconductor power transistor such that at least one electrode of the second semiconductor transistor is mounted on, and electrically connected to, the via positioned in the first semiconductor power transistor, the electrode of the second semiconductor power transistor being galvanically isolated from the first semiconductor power transistor and being independently electrically accessible from the first side of the first semiconductor power transistor.
2. The electronic component according to claim 1 , wherein at least one control electrode is positioned on the first side of the first semiconductor transistor and the second vertical semiconductor power transistor is mounted on the second side of the first vertical semiconductor power transistor, the first electrode of the second semiconductor power transistor being mounted on, and electrically connected to, the second electrode of the first semiconductor power transistor and the control electrode being mounted on, and electrically connected to, the via.
3. The electronic component according to claim 1 , wherein the first vertical semiconductor power transistor and the second vertical semiconductor power transistor are configured to provide a half-bridge circuit.
4. The electronic component according to claim 1 , wherein the first vertical semiconductor power transistor is the Low Side Switch and the second vertical semiconductor power transistor is the High Side Switch of the half bridge circuit.
5. The electronic component according to claim 1 , wherein the first vertical semiconductor power transistor is selected from the group consisting of: a MOSFET, an IGBT and a BJT and the second vertical semiconductor power transistor is selected from the group consisting of: a MOSFET, an IGBT and a BJT.
6. The electronic component according to claim 1 , further comprising a leadframe, the leadframe providing outer contact surface of the electronic component, wherein the first electrode of the first vertical semiconductor power transistor is mounted on a first portion of the leadframe and the control electrode of the first semiconductor power transistor is mounted on a first control portion of the leadframe and the via is mounted on a second control electrode portion of the leadframe.
7. The electronic component according to claim 6 , wherein the second electrode of the second semiconductor transistor is mounted on, and electrically connected to, the first electrode of the first vertical semiconductor power transistor and the control electrode of the second semiconductor transistor is mounted on, and electrically connected to, the via positioned in the first semiconductor power transistor and is electrically connected to the second control portion of the leadframe.
8. The electronic component according to claim 7 , further comprising an electrical connection from the second electrode of the first semiconductor power transistor to a second portion of the leadframe and an electrical connection from the second electrode of the second semiconductor power transistor to a third portion of the leadframe.
9. The electronic component according to claim 1 , wherein the via comprises a through-hole positioned in the semiconductor body extending from the first side to the second side and an electrically conductive mass located in the through-hole and extending from the first side to the second side.
10. The electronic component according to claim 1 , wherein the via further comprises at least one isolation layer positioned on at least the walls of the though-hole, the electrical isolation layer galvanically isolating the via from the device structures of the semiconductor body.
11. The electronic component according to claim 10 , wherein the isolation layer provides a galvanic isolation voltage of 10V to 10 kV.
12. The electronic component according to claim 10 , wherein the isolation layer comprises a thickness t, wherein 10 nm ≦t≦10 μm.
13. The electronic component according to claim 10 , wherein the isolation layer comprises one of SiO 2 , SiNO, BPSG, TEOS and Si x H x .
14. The electronic component according to claim 10 , wherein the isolation layer is further positioned on the first side and the second side of the semiconductor body at least in regions contiguous to the through-hole.
15. The electronic component according to claim 1 , wherein the via comprises one of aluminium, an aluminium alloy, copper and a copper alloy.
16. The electronic component according to claim 1 , wherein a first contact pad is positioned on the first surface and is in physical and electrical contact with the via and a second contact pad is positioned on the second surface and is in physical and electrical contact with the via.
17. An electronic component, comprising:
at least one first vertical semiconductor power transistor, the vertical semiconductor power transistor comprising a semiconductor body having a first side and a second side and device structures, at least one first electrode and at least one control electrode positioned on the first side and at least one second electrode positioned on the second side, wherein the semiconductor body further comprises at least one electrically conductive via, the via extending from the first side to the second side of the semiconductor body and being galvanically isolated from the device structures of the semiconductor body and from the first electrode, the second electrode and the control electrode, and
a control semiconductor chip comprising at least one chip contact positioned on a first chip surface,
wherein the control semiconductor chip is mounted on the second side of the first vertical semiconductor transistor and the chip contact is mounted on and electrically connected to at least one via, the control semiconductor chip being independently electrically accessible from the first side of the first vertical semiconductor power transistor.
18. The electronic component according to claim 17 , further comprising a leadframe, the leadframe providing outer contact surface of the electronic component, wherein the first electrode of the first vertical semiconductor power transistor is mounted on a first portion of the leadframe and the control electrode of the first semiconductor power transistor is mounted on a control portion of the leadframe and wherein the via is mounted on a fourth portion of the leadframe, electrically connecting the control chip to the fourth portion of the leadframe.
19. The electronic component according to claim 17 , wherein the via comprises a through-hole positioned in the semiconductor body extending from the first side to the second side and an electrically conductive mass located in the through-hole extending from the first side to the second side.
20. The electronic component according to claim 17 , wherein the via further comprises at least one isolation layer positioned on at least the walls of the though-hole, the electrical isolation layer galvanically isolating the via from the device structures of the semiconductor body.
21. The electronic component according to claim 17 , wherein the isolation layer provides a blocking voltage of from 10V to 10 kV.
22. The electronic component according to claim 17 , wherein the isolation layer comprises a thickness t, wherein 10 nm≦t≦10 μm.
23. A semiconductor die comprising a vertical semiconductor power transistor, wherein the vertical semiconductor power transistor comprises:
a semiconductor body having a first side and a second side and device structures;
at least one first electrode and at least one control electrode positioned on the first side; and
at least one second electrode positioned on the second side,
wherein the semiconductor body further comprises at least one electrically conductive via, wherein the via extends from the first side to the second side of the semiconductor body and is galvanically isolated from the device structures of the semiconductor body and from the first electrode, the second electrode and the control electrode.
24. The semiconductor die according to claim 23 , wherein the via comprises a through-hole positioned in the semiconductor body extending from the first side to the second side and an electrically conductive mass located in the through-hole extending from the first side to the second side.
25. The semiconductor die according to claim 24 , wherein the via further comprises at least one isolation layer positioned on at least the walls of the though-hole, the isolation layer galvanically isolating the via from the device structures of the semiconductor body.
26. The semiconductor die according to claim 25 , wherein a first contact pad is positioned on the first surface and is in physical and electrical contact with the via and a second contact pad is positioned on the second surface and is in physical and electrical contact with the via.
27. The semiconductor die according to claim 26 , wherein a layer of diffusion solder is positioned on the outermost surface of the first contact pad.
28. The semiconductor die according to claim 23 , wherein the vertical semiconductor power transistor is selected from the group consisting of a MOSFET, an IGBT and a BJT.
29. The electronic component according to claim 10 , wherein the isolation layer comprises a thickness t, wherein 100 nm≦t≦1 μm.
30. The electronic component according to claim 17 , wherein the isolation layer comprises a thickness t, wherein 100 nm≦t≦1 μm.