Ferroelectric memory device, method for driving ferroelectric memory device, electronic apparatus, and method for driving electronic apparatus

1. A ferroelectric memory device comprising:

an odd number of memory regions, the odd number being at least three or higher;

a read-out circuit that reads data of 0 or 1 stored in the odd number of memory regions;

a comparison circuit that compares readout data at corresponding addresses of the odd number of memory regions, and decides comparison data of 0 or 1 according to voting;

a write circuit that writes the comparison data in one region in the odd number of memory regions; and

a judgment circuit that judges as to whether or not the number of power-on events is one.

2. A ferroelectric memory device according to claim 1 , wherein the comparison data is written in the one region, only when the number of power-on is one.

3. A ferroelectric memory device according to claim 1 , wherein the odd number of memory regions store identical programs.

4. A ferroelectric memory device according to claim 1 , wherein the memory regions other than the one region are used as rewritable regions.

5. A method for driving a ferroelectric memory device, the method comprising the steps of:

(1) storing a first program composed of 0 or 1 in an odd number of memory regions, the odd number being at least three or higher; and

(2) reading data at corresponding addresses of the odd number of memory regions, comparing the data readout, deciding comparison data of 0 or 1 according to voting, and writing the comparison data to one region in the odd number of memory regions, wherein a thermal load is applied between the steps (1) and (2).

6. A method for driving a ferroelectric memory device according to claim 5 , comprising the step of writing desired data in the memory regions other than the one region.

7. A method for driving an electronic apparatus comprising the method for driving a ferroelectric memory device recited in claim 5 .