Magnetic memory device and method of fabricating the same
A magnetic memory device includes a common line; a first write-in diode, a readout diode and a second write-in diode being connected to the common line in parallel. The magnetic memory device further includes a magnetic tunnel junction structure connected to the readout diode, first and second write-in conductors disposed at both sides of the magnetic tunnel junction structure and connected to the first and second write-in diodes, respectively and a first write-in line, a readout line and a second write-in line, which are connected to the first write-in conductor, the magnetic tunnel injection structure, and the second write-in conductor, respectively.
1. A magnetic memory device comprising:
a common line;
a first write-in diode, a readout diode and second write-in diode being connected to the common line in parallel;
a magnetic tunnel junction structure connected to the readout diode;
first and second write-in conductors disposed at both sides of the magnetic tunnel junction structure and connected to the first and second write-in diodes, respectively; and
a first write-in line, a readout line and a second write-in line, which are connected to the first write-in conductor, the magnetic tunnel injection structure, and the second write-in conductor, respectively, wherein the first write-in diode, the readout diode, the second write-in diode, the magnetic tunnel junction structure, the first and second write-in conductors, the first write-in line, the readout line, and the second write-in line constitute a unit memory cell.
2. The magnetic memory device of claim 1 , wherein the first write-in conductor is adapted to apply a first electric field of a first direction to the magnetic tunnel junction structure during a first programming mode while the second write-in conductor is adapted to apply a second electric field of a second direction to the magnetic tunnel junction structure during a second programming mode, the first direction being reverse to the second direction.
3. The magnetic memory device of claim 2 , wherein the magnetic tunnel junction structure comprises:
a first magnetic layer having a fixed magnetization direction;
a second magnetic layer having a changeable magnetization direction; and
a tunnel barrier layer interposed between the first and second magnetic layers.
4. The magnetic memory device of claim 1 , wherein forward output terminals of the first write-in diode, the readout diode and the second write-in diode are connected to the common line,
wherein forward input terminals of the first write-in diode, the readout diode and the second write-in diode are each connected to the first write-in conductor, the magnetic tunnel junction structure and the second write-in conductor.
5. The magnetic memory device of claim 1 , wherein forward input terminals of the first write-in diode, the readout diode and the second write-in diode are connected to the common line,
wherein forward output terminals of the first write-in diode, the readout diode and the second write-in diode are each connected to the first write-in conductor, the magnetic tunnel junction structure and the second write-in conductor.
6. The magnetic memory device of claim 1 , wherein one of the common line and the readout line is correspondent with a word line, while the other of the common line and the readout line is correspondent with a bit line.