Sacrificial benzocyclobutene copolymers for making air gap semiconductor devices
A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is a copolymer of bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol diacrylate (such as bis[3-(4-benzocyclobutenyl)]1,6 hexanediol diacrylate) and 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is a copolymer of bis[3-(4-benzocyclobutenyl)]1,n (n=2-12)alkyldiol diacrylate and 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene.
1. A method of forming an air gap within a semiconductor structure comprising the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is a copolymer comprising a first monomer selected from the group consisting of bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol diacrylate and a second monomer selected from the group consisting of 1,3 bis 2[4-benzocyclobutenyl (ethenyl)]benzene.
2. The method of claim 1 , wherein the sacrificial polymer is a copolymer comprising from 99 to 40 mole percent bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol diacrylate and from 1 to 60 mole percent 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene based on total moles of incorporated monomers in the polymer.
3. The method of claim 1 , wherein the sacrificial polymer is a copolymer comprising from 95 to 75 mole percent bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol diacrylate and from 5 to 25 mole percent 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene based on total moles of incorporated monomers in the polymer.
4. The method of claim 1 , wherein the sacrificial polymer is a copolymer comprising about 90 mole percent bis[3-(4-benzocyclobutenyl)]1,6 hexanediol diacrylate and about 10 mole percent of 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene based on total moles of incorporated monomers in the polymer.
5. The method of claim 1 , wherein the sacrificial polymer is a copolymer consisting essentially of from 99 to 40 mole percent bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol diacrylate and from 1 to 60 mole percent 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene based on total moles of incorporated monomers in the polymer.
6. The method of claim 1 , wherein the sacrificial polymer is a copolymer consisting essentially of from 99 to 40 mole percent bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol diacrylate and from 1 to 60 mole percent 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene based on total moles of incorporated monomers in the polymer.
7. The method of claim 1 , wherein the sacrificial polymer is a copolymer consisting essentially of about 90 mole percent bis[3-(4-benzocyclobutenyl)]1,6 hexanediol diacrylate and about 10 mole percent 1,3 bis 2[4-benzocyclobutenyl (ethenyl)]benzene based on total moles of incorporated monomers in the polymer.
8. A semiconductor structure, comprising a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is a copolymer comprising bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol diacrylate and 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene.
9. The semiconductor structure of claim 8 , wherein the sacrificial polymer is a copolymer comprising from 99 to 40 mole percent bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol diacrylate and from 1 to 60 mole percent 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene based on total moles of incorporated monomers in the polymer.
10. The semiconductor structure of claim 8 , wherein the sacrificial polymer is a copolymer comprising from 95 to 75 mole percent bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol diacrylate and from 5 to 25 mole percent 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene based on total moles of incorporated monomers in the polymer.
11. The semiconductor structure of claim 8 , wherein the sacrificial polymer is a copolymer comprising about 90 mole percent bis[3-(4-benzocyclobutenyl)]1,6 hexanediol diacrylate and about 10 mole percent 1,3 bis 2[4-benzocyclobutenyl (ethenyl)]benzene based on total moles of incorporated monomers in the polymer.
12. The semiconductor structure of claim 8 , wherein the sacrificial polymer is a copolymer consisting essentially of from 99 to 40 mole percent bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol diacrylate and from 1 to 60 mole percent 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene based on total moles of incorporated monomers in the polymer.
13. The semiconductor structure of claim 8 , wherein the sacrificial polymer is a copolymer consisting essentially of from 95 to 75 mole percent bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol diacrylate and from 55 to 25 mole percent 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene based on total moles of incorporated monomers in the polymer.
14. The semiconductor structure of claim 8 , wherein the sacrificial polymer is a copolymer consisting essentially of about 90 mole percent bis[3-(4-benzocyclobutenyl)]1,6 hexanediol diacrylate and about 30 mole percent 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene based on total moles of incorporated monomers in the polymer.