IP Library › Granted Patent US 7,592,618
Granted Patent B2
US 7,592,618 · App. 11/356,122 · Granted Sep 22, 2009

Nanoparticle electroluminescence and method of manufacturing the same

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 7,592,618
App. No.
11/356,122
Granted
Sep 22, 2009
Kind
B2
Abstract

The nanoparticle electroluminescence device includes: a front electrode formed of a transparent conductive material; a rear electrode formed of a conductive material; and an emitting layer interposed between the front electrode and the rear electrode and comprising a plurality of nanoparticles having a core/shell structure comprising a core formed of silicon and a shell formed of silicon oxide or silicon nitride on the surface of the core.

Claims (23)

1. A nanoparticle electroluminescence device comprising:

a front electrode formed of a transparent conductive material;

a rear electrode formed of a conductive material; and

an emitting layer interposed between the front electrode and the rear electrode, wherein said emitting layers includes a plurality of nanoparticle layers, each nanoparticle layer includes a plurality of nanoparticles having a core/shell structure comprising a core formed of silicon and a shell formed of silicon oxide or silicon nitride on the surface of the core, and wherein said emitting layers further includes insulating layers formed above and below the plurality of nanoparticle layers, and an insulating layer between adjacent nanoparticle layers among said plurality of nanoparticle layers.

2. The device of claim 1 , wherein insulating layers are formed of silicon oxide or silicon nitride.

3. The device of claim 1 , wherein a diameter of the nanoparticles is between 1 nm and 10 nm.

4. A method of manufacturing a nanoparticle electroluminescence device, the method comprising:

preparing a transparent substrate;

forming a front electrode on the substrate using a transparent conductive material; and

forming an emitting layer comprising a plurality of nanoparticle layers, each nanoparticle layer including a plurality of nanoparticles comprising a core/shell structure having a core formed of silicon and a shell formed of silicon oxide or silicon nitride on the surface of the core, and wherein said emitting layers includes insulating layers formed above and below the plurality of nanoparticle layers, and an insulating layer between adjacent nanoparticle layers among said plurality of nanoparticle layers on the front electrode; and forming a rear electrode on the emitting layer using a conductive material.

5. The method of claim 4 , wherein the forming of the emitting layer comprises:

forming a lower insulating layer on the front electrode;

forming a nanoparticle layer by coating the nanoparticles on the lower insulating layer;

forming an upper insulating layer on the nanoparticle layer;

forming another nanoparticle layer on the upper insulating layer; and

forming another upper insulating layer on said another nanoparticle layer.

6. The method of claim 5 , wherein the insulating layers are formed of silicon oxide or silicon nitride.

7. The method of claim 5 , wherein the forming of the nanoparticle layer comprises:

preparing the nanoparticles; and

coating the nanoparticles on the lower insulating layer.

8. The method of claim 7 , wherein the preparing of the nanoparticles is performed using pyrolysis or laser ablation.

9. The method of claim 8 , wherein a diameter of the nanoparticles is between 1 nm and 10 nm.

10. The method of claim 8 , wherein the coating of the nanoparticles is performed using thermophoresis or electrophoresis.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 17, 2006
From: KHANG, YOON-HO; LEE, EUN-HYE; LEE, KYO-YEOL; LEE, JOO-HYUN; IM, SEONG-IL
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 017602/0980 →
Priority Claims (1)
KR 10-2005-0015574 · Feb 24, 2005 · national
Continuity (1)
Related Publication 20060188707A1 · Aug 24, 2006