Color sensor, production method thereof, sensor, and electronics device
A color sensor of the present invention is arranged such that (i) an interference filter is provided directly above light receiving elements so as to transmit incoming light having a predetermined wavelength of the incoming light, and color filters are provided directly on the interference filter, or (ii) the color filters are provided directly above the light receiving element, and the interference filter is provided directly on the color filters so as to transmit incoming light having a predetermined wavelength of the incoming light.
1. A color sensor comprising:
a plurality of color filters, provided side by side, transmitting incident light; and
light receiving elements, respectively corresponding to the color filters, each converting the incident light into an electrical signal,
the color sensor further comprising:
an interference filter, provided directly above the light receiving elements, transmitting light having a predetermined wavelength of the incident light; and
the color filters being provided directly on the interference filter,
the light receiving elements being a plurality of photodiodes each formed by (i) producing a first conductive silicon epitaxial wafer by forming an epitaxial layer with a use of an epitaxial growth and (ii) forming a second conductive layer from a surface of the epitaxial layer of the silicon epitaxial wafer into the epitaxial layer,
the second conductive layer having a center region and a frame-like periphery section that is formed so as to be deeper than the center region.
2. The color sensor as set forth in claim 1 , wherein:
a peak wavelength of the photodiode with respect to infrared light is equal to or less than 800 nm.
3. The color sensor as set forth in claim 2 , wherein:
on the first conductive silicon epitaxial wafer is formed the epitaxial layer having a thickness in a range from 1 μm to 10 μm.
4. The color sensor as set forth in claim 2 , wherein:
the light receiving elements being a first photodiode, a second photodiode, and a third photodiode which are the plurality of photodiodes and which are provided side by side; and
a color filter transmitting red light in a visible light region is formed for the first photodiode; a color filter transmitting green light in the visible light region is formed for the second photodiode; and a color filter transmitting the blue light in the visible light region is formed for the third photodiode.
5. The color sensor as set forth in claim 1 , wherein
the frame-like periphery section of the second conductive layer has a depth of equal to or more than 0.8 μm below a surface of the second conductive layer, and the center region has a depth of less than 0.8 μm below the surface thereof.
6. The color sensor as set forth in claim 3 , wherein
a specific resistance of the epitaxial layer is 20 Ωcm to 200 Ωcm.
7. A sensor comprising a color sensor including: a plurality of color filters, provided side by side, transmitting incident light; light receiving elements, respectively corresponding to the color filters, each converting the incident light into an electrical signal; and an interference filter, provided directly above the light receiving elements, transmitting light having a predetermined wavelength of the incident light, the color filters being provided directly on the interference filter,
the light receiving elements being a plurality of photodiodes each formed by (i) producing a first conductive silicon epitaxial wafer by forming an epitaxial layer with a use of an epitaxial growth and (ii) forming a second conductive layer from a surface of the epitaxial layer of the silicon epitaxial wafer into the epitaxial layer,
the second conductive layer having a center region and a frame-like periphery section that is formed so as to be deeper than the center region.
8. An electronics device comprising a color sensor including: a plurality of color filters, provided side by side, transmitting incident light; light receiving elements, respectively corresponding to the color filters, each converting the incident light into an electrical signal; and an interference filter, provided directly above the light receiving elements, transmitting light having a predetermined wavelength of the incident light, the color filters being provided directly on the interference filter,
the light receiving elements being a plurality of photodiodes each formed by (i) producing a first conductive silicon epitaxial wafer by forming an epitaxial layer with a use of an epitaxial growth and (ii) forming a second conductive layer from a surface of the epitaxial layer of the silicon epitaxial wafer into the epitaxial layer,
the second conductive layer having a center region and a frame-like periphery section that is formed so as to be deeper than the center region.