Bi-directional MOSFET power switch with single metal layer
A bi-directional power switch is formed as a monolithic semiconductor device. The power switch has two MOSFETs formed with separate source contacts to the external package and a common drain. The MOSFETs have first and second channel regions formed over a well region above a substrate. A first source is formed in the first channel. A first metal makes electrical contact to the first source. A first gate region is formed over the first channel. A second source region is formed in the second channel. A second metal makes electrical contact to the second source. A second gate region is formed over the second channel. A common drain region is disposed between the first and second gate regions. A local oxidation on silicon region and field implant are formed over the common drain region. The metal contacts are formed in the same plane as a single metal layer.
1. A monolithic semiconductor device, comprising:
a substrate;
a well region formed over the substrate;
a first channel region formed in the well region;
a first source region formed adjacent to the first channel region;
a first metal layer in electrical contact with the first source region;
a first gate region formed over the first channel region;
a second channel region formed in the well region;
a second source region formed adjacent to the second channel region;
a second metal layer in electrical contact with the second source region;
a second gate region formed over the second channel region;
a common drain region disposed between the first and second gate regions;
a local oxidation on a silicon region formed over the common drain region;
a first electrostatic protection diode coupled between the first gate region and first source region; and
a second electrostatic protection diode coupled between second gate region and second source region.
2. A monolithic semiconductor device, comprising:
a substrate;
a well region formed over the substrate;
a first channel region formed in the well region;
a first source region formed adjacent to the first channel region;
a first metal layer in electrical contact with the first source region;
a first gate region formed over the first channel region;
a second channel region formed in the well region;
a second source region formed adjacent to the second channel region;
a second metal layer in electrical contact with the second source region, wherein the first and second metal layers are formed in a first plane;
a second gate region formed over the second channel region;
a common drain region disposed between the first and second gate regions;
a first electrostatic protection diode coupled between the first gate region and first source region; and
a second electrostatic protection diode coupled between second gate region and second source region.
3. An integrated circuit, comprising:
a semiconductor device including,
(a) a substrate,
(b) a well region formed over the substrate,
(c) a first transistor having a first channel region formed in the well region, a first source region formed adjacent to the first channel region, a first metal layer in electrical contact with the first source region, and a first gate region formed over the first channel region,
(d) a second transistor having a second channel region formed in the well region, a second source region formed adjacent to the second channel region, a second metal layer in electrical contact with the second source region, wherein the first and second metal layers are formed and interdigitated in the same plane, and a second gate region formed over the second channel region, and
(e) a common drain region disposed between the first and second gate regions of the first and second transistors; and
a control circuit having a first output coupled to the first gate region and a second output coupled to the second gate region.
4. The integrated circuit of claim 3 , further including a local oxidation on a silicon region formed over the common drain region.