IP Library › Granted Patent US 7,605,980
Granted Patent B2
US 7,605,980 · App. 11/863,350 · Granted Oct 20, 2009

Image sensor and fabricating method thereof

Assignee: Dongbu Hitek Co., Ltd.
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Quick Facts
Patent No.
US 7,605,980
App. No.
11/863,350
Granted
Oct 20, 2009
Kind
B2
Abstract

An image sensor and fabricating method thereof are provided. The image sensor can include differently microlenses formed on a pixel array substrate. The differently shaped microlenses are formed using a phase mask where the light blocking region for each microlens pattern is positioned according to the relative angle of the microlens to a main lens. The phase shift mask results in a dome shaped microlens at a region of the pixel array substrate receiving incident light from the same axis as light incident the main lens and in asymmetrical shaped microlenses with a thicker region in a portion of the microlens farthest from the dome shaped microlens.

Claims (11)

1. A fabricating method of an image sensor comprising:

coating a photoresist for a microlens on a pixel array substrate;

forming a lens pattern array, each lens pattern having a step difference therein by exposing and developing the photoresist using an exposure mask; and

reflowing the lens pattern array to form differently shaped microlenses,

wherein the exposure mask is a half tone phase shift mask,

wherein the half tone phase shift mask includes a light blocking area, a partial light transmitting area, and a total light transmitting area for each mask block of the exposure mask.

2. The method according to claim 1 , wherein the mask block for a center of the lens pattern array comprises the light blocking area in a central area of the mask block and the partial light transmitting area around the central area of the mask block.

3. The method according to claim 1 , wherein the mask block for a left portion of the lens pattern array comprises the light blocking area at a left edge of the mask block and the partial light transmitting area at remaining areas of the mask block.

4. The method according to claim 1 , wherein the mask block for a right portion of the lens pattern array comprises the light blocking area at a right edge of the mask block and the partial light transmitting area at remaining areas of the mask block.

5. The method according to claim 1 , wherein a thickness of a microlens edge area of a selected microlens of the microlenses is more thickly formed as the selected microlens is positioned farther away from a central region.

6. The method according to claim 1 , wherein the surface curvature radius of a selected microlens of the microlenses varies by a larger asymmetry as the selected microlens is positioned farther away from a central region.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 4, 2007
From: KIM, SHANG WON
To: DONGBU HITEK CO., LTD.
Reel/Frame 019918/0753 →
Priority Claims (1)
KR 10-2006-0132346 · Dec 22, 2006 · national
Continuity (1)
Related Publication 20080151378A1 · Jun 26, 2008