Method of manufacturing doped superconducting materials
View Patent ↗The invention provides a method of manufacturing a doped i X—Ba—Cu—O material, the method comprising the steps of: a) mixing an X—Ba—L—O or X—Ba—Cu—L—O material with an X—1 Ba—Cu—O material; and b) crystallising the mixture; 1 wherein each X is independently selected from a rare earth (Group IIIB) element, yttrium, a combination of rare earth elements, or a combination of yttrium and a rare earth element; and L is selected from U, Nb, Ta, Mo, W, Zr, Hf, Ag, Pt, Ru and Sn. The invention further provides a doped material manufactured by the method of the invention.
1. A method of manufacturing a doped X—Ba—Cu—O material, the method comprising the steps of:
a) mixing an X—Ba—Cu-L-O material with an X—Ba—Cu—O material; and
b) crystallising the mixture;
wherein
each X is independently selected from a rare earth (Group IIIB) element, yttrium, a combination of rare earth elements, or a combination of yttrium and a rare earth element; and each L is one or more elements selected from U, Nb, Ta, Mo, W, Zr, Hf, Ag, Pt, Ru and Sn,
wherein the X—Ba—Cu-L-O material comprise material of general formula:
X w Ba x Cu y L t O z
wherein each X and L is as defined hereinabove; and
wherein w is 1, 2 or 3; x is 2 to 4; y is 0.1 to 1; t is 0.5 to 1; and z is 4 to 15.
2. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 1 wherein the X—Ba—Cu—O material comprises material of the general formula
X a Ba b Cu c O d
wherein each X is as defined hereinabove, and wherein a is 1 to 4; b is 1 to 6; c is 0.5 to 4; d is 3 to 20.
3. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 2 , wherein a is 1, 2 or 3; b is 2 to 4; c is 1 to 3; and d is 4 to 15.
4. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 2 wherein the X a Ba b Cu c O d is added in step (a) to an amount of at least 50% w/w of the mixture.
5. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 2 wherein step (b) comprises crystallisation as a mixture of X w Ba x Cu y L t O z in molten X a Ba b Cu c O d .
6. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 2 wherein step (b) comprises providing in a receptable a mixture of X a Ba b Cu c O d and X w Ba x Cu y L t O z ; melting the mixture; providing a seed or key to the receptacle; and subsequently manipulating the temperature of, or in the region of, the seed or key, to induce crystallisation of the molten mixture.
7. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 6 wherein the X a Ba b Cu c O d and X w Ba x Cu y L t O z is added to the receptacle in solid form and the mixture melted.
8. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 6 wherein the X a Ba b Cu c O d is melted in the receptacle and solid X w Ba x Cu y L t O z is added to the molten material.
9. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 6 wherein the seed or key is added to the molten mixture or added prior to melting the mixture.
10. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 9 wherein the seed or key is a crystal of compatible crystallographic and chemical structure to the X a Ba b Cu c O d .
11. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 9 wherein the seed crystal is the identical X a Ba b Cu c O d material or X a Ba b Cu c O d material with a different X atom to the X a Ba b Cu c O d material being crystallised.
12. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 1 , wherein each X is independently selected from one or more of Y, Nd, Sm, Gd, Eu and Ho.
13. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 1 wherein the X w Ba x Cu y L t O z is added in step (a) to an amount of at least 0.01% w/w of the total weight of the mixture produced in step (a).
14. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 1 wherein the X w Ba x Cu y L t O z is a solid.
15. A method of manufacturing a doped X —Ba —Cu —O material as claimed in claim 1 wherein step (b) comprises single crystallisation.
16. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 1 wherein the resultant doped X—Ba—Cu—O crystal is annealed at between 400° C. and 700° C.
17. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 1 further comprising mixing Y203 with the mixture produced in step (a).
18. A method of manufacturing a doped X—Ba—Cu—O material as claimed in claim 1 further comprising adding Pt to the mixture produced in step (a).