Imaging device and imaging system
An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101 A and 101 B, plural transfer MOSFETs 102 A and 102 B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET 104 which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.
1. An imaging device comprised of a plurality of unit cells disposed therein, the plurality of unit cells being arranged in a row and column arrangement, and each unit cell including:
a plurality of photoelectric conversion regions;
a plurality of floating diffusion regions provided corresponding to the plurality of photoelectric conversion regions, respectively;
a plurality of MOS transistors, wherein each of the plurality of MOS transistors transfers signal charges of a corresponding one of the plurality of photoelectric conversion regions to a corresponding one of the plurality of floating diffusion regions;
a common amplifier having an input connected to the plurality of floating diffusion regions and amplifying signals transferred to the plurality of floating diffusion regions from the plurality of photoelectric conversion regions; and
a common reset transistor, which resets the input of the common amplifier,
wherein each of the plurality of photoelectric conversion regions of a unit cell is disposed at a first pitch in a column direction, each gate electrode of the plurality of MOS transistors of a unit cell is disposed at a second pitch in the column direction, and each of the plurality of floating diffusion regions of a unit cell is disposed at a third pitch, such that the first pitch, the second, and the third pitch are equal to each other, and
wherein, for a unit cell, each of the plurality of photoelectric conversion regions of the unit cell is disposed at a fourth pitch in a row direction, each gate electrode of the plurality of MOS transistors of the unit cell is disposed at a fifth pitch in the row direction, and each of the plurality of floating diffusion regions is disposed at a sixth pitch in the row direction, such that the fourth pitch, the fifth pitch, and the sixth pitch are equal to each other, and
wherein, for photoelectric conversion regions that are adjacent along the column direction, a common amplifier and a common reset transistor are disposed between the adjacent photoelectric conversion regions along the column direction, and, for photoelectric conversion regions that are adjacent along the row direction, a floating diffusion region is disposed between the adjacent photoelectric conversion regions along the row direction.
2. An imaging device according to claim 1 , wherein the imaging device is incorporated in an imaging system that includes:
an optical system, which focuses light on the imaging device; and
a signal processing circuit, which processes an output signal from the imaging device.