Manufacturing method of semiconductor device and semiconductor device
View Patent ↗A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.
1. A method of manufacturing a semiconductor device comprising the steps of:
forming a gate electrode layer over a light-transmitting substrate;
forming a gate insulating layer containing an inorganic material over the gate electrode layer and the substrate;
forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer;
polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode layer as a mask;
forming an organic polymer layer by removing a residue of the organic layer, which is other than polymerized;
forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed;
forming a source electrode layer and a drain electrode layer by applying a composition containing a conductive material over the organic polymer layer; and
forming a semiconductor layer over the gate electrode layer, the source electrode layer, and the drain electrode layer.
2. A method of manufacturing a semiconductor device comprising the steps of:
forming a gate electrode layer over a light-transmitting substrate;
forming a gate insulating layer containing an inorganic material over the gate electrode layer and the substrate;
forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer;
polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode layer as a mask;
forming an organic polymer layer by removing a residue of the organic layer, which is other than polymerized;
forming a first organosilane film including a first hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed;
forming a source electrode layer and a drain electrode layer by applying a composition containing a conductive material over the organic polymer layer;
removing the first organosilane film;
forming a second organosilane film having a second hydrolytic group over the gate electrode layer, the source electrode layer, and the drain electrode layer; and
forming a semiconductor layer over the second organosilane film.
3. The method of manufacturing a semiconductor device according to claim 2 , wherein the second organosilane film is formed using octadecyltrimethoxysilane.
4. The method of manufacturing a semiconductor device according to claim 1 , further comprising forming a display element electrically connected to the source electrode layer or the drain electrode layer.
5. The method of manufacturing a semiconductor device according to claim 2 , further comprising forming a display element electrically connected to the source electrode layer or the drain electrode layer.
6. The method of manufacturing a semiconductor device according to claim 1 , wherein the semiconductor layer is formed using an organic semiconductor material.
7. The method of manufacturing a semiconductor device according to claim 2 , wherein the semiconductor layer is formed using an organic semiconductor material.