Substrate processing apparatus
View Patent ↗A substrate processing apparatus of the present invention dilutes a sample gas by mixing the sample gas with nitrogen gas and measures the concentration of IPA gas contained in the diluted sample gas in a concentration measuring part. Then, the substrate processing apparatus calculates the concentration (C 0 ) of IPA gas contained in the sample gas before being diluted by multiplying the measured concentration value (C 1 ) by the reciprocal (1/P) of a dilution rate which is obtained on the basis of the amount of flow of the sample gas and that of the diluent gas, as C 0 =C 1 ×(1/P). Therefore, even if IPA gas of high concentration is used, it is possible to accurately measure the concentration of the IPA gas.
1. A substrate processing apparatus for processing a substrate with a process gas, comprising:
a processing chamber for holding a substrate therein;
a process gas supply part for supplying a process gas together with a carrier gas into said processing chamber;
an extraction part for extracting part of gas inside said processing chamber as a sample gas;
a diluent gas supply part for supplying a diluent gas to dilute a sample gas;
a dilution part for diluting a sample gas by mixing the sample gas extracted by said extraction part with a diluent gas supplied by said diluent gas supply part;
a concentration meter for measuring the concentration of a process gas contained in the sample gas diluted by said dilution part;
a first flowmeter for measuring the amount of flow of the sample gas before being diluted, which flows in a pipe from said extraction part to said dilution part or the amount of flow of the sample gas after being diluted, which flows in a pipe from said dilution part;
a second flowmeter for measuring the amount of flow of the diluent gas flowing in a pipe from said diluent gas supply part to said dilution part; and
a calculation part for calculating the concentration of the process gas contained in the sample gas before being diluted, on the basis of respective measured values of said concentration meter, said first flowmeter and said second flowmeter.
2. The substrate processing apparatus according to claim 1 , wherein
said calculation part calculates the concentration of the process gas contained in the sample gas before being diluted, by multiplying the measured value of said concentration meter by the reciprocal of a dilution rate which is obtained on the basis of the respective measured values of said first flowmeter and said second flowmeter.
3. The substrate processing apparatus according to claim 2 , further comprising
a flow rate control part for sample gas before dilution, which controls the flow rate of the sample gas flowing in a pipe from said extraction part to said dilution part.
4. The substrate processing apparatus according to claim 3 , further comprising
a flow rate control part for sample gas after dilution, which controls the flow rate of the sample gas flowing in a pipe from said dilution part to said concentration meter.
5. The substrate processing apparatus according to claim 4 , further comprising
a flow rate control part for diluent gas, which controls the flow rate of the diluent gas flowing in a pipe from said diluent gas supply part to said dilution part.
6. The substrate processing apparatus according to claim 5 , further comprising
a temperature control part for sample gas, which controls the temperature of the sample gas flowing in a pipe from said extraction part to said dilution part.
7. The substrate processing apparatus according to claim 6 , further comprising
a temperature control part for diluent gas, which controls the temperature of the diluent gas flowing in a pipe from said diluent gas supply part to said dilution part.
8. The substrate processing apparatus according to claim 7 , further comprising
a container for accommodating a gas pipe line including said concentration meter, said first flowmeter and said second flowmeter; and
a jet part for jetting the diluent gas of which temperature is controlled by said temperature control part for diluent gas into said container.
9. The substrate processing apparatus according to claim 8 , wherein
said diluent gas supply part supplies a carrier gas as a diluent gas.
10. The substrate processing apparatus according to claim 9 , wherein
said extraction part is capable of switching between a first state where part of gas inside said processing chamber is extracted as a sample gas and a second state where part of gas supplied by said process gas supply part is extracted as a sample gas.
11. The substrate processing apparatus according to claim 9 , wherein
said extraction part extracts a sample gas through a gas extraction port which is provided separately from said process gas supply part.
12. A substrate processing apparatus for processing a substrate with a process gas, comprising:
a processing chamber for holding a substrate therein;
a process gas supply part for supplying a process gas together with a carrier gas into said processing chamber;
an extraction part for extracting part of gas supplied from said process gas supply part into said processing chamber as a sample gas;
a diluent gas supply part for supplying a diluent gas to dilute a sample gas;
a dilution part for diluting a sample gas by mixing the sample gas extracted by said extraction part with a diluent gas supplied by said diluent gas supply part;
a concentration meter for measuring the concentration of a process gas contained in the sample gas diluted by said dilution part;
a first flowmeter for measuring the amount of flow of the sample gas before being diluted, which flows in a pipe from said extraction part to said dilution part or the amount of flow of the sample gas after being diluted, which flows in a pipe from said dilution part;
a second flowmeter for measuring the amount of flow of the diluent gas flowing in a pipe from said diluent gas supply part to said dilution part; and
a calculation part for calculating the concentration of the process gas contained in the sample gas before being diluted, on the basis of respective measured values of said concentration meter, said first flowmeter and said second flowmeter.
13. The substrate processing apparatus according to claim 12 , wherein
said calculation part calculates the concentration of the process gas contained in the sample gas before being diluted, by multiplying the measured value of said concentration meter by the reciprocal of a dilution rate which is obtained on the basis of the respective measured values of said first flowmeter and said second flowmeter.
14. The substrate processing apparatus according to claim 13 , further comprising
a flow rate control part for sample gas before dilution, which controls the flow rate of the sample gas flowing in a pipe from said extraction part to said dilution part.
15. The substrate processing apparatus according to claim 14 , further comprising
a flow rate control part for sample gas after dilution, which controls the flow rate of the sample gas flowing in a pipe from said dilution part to said concentration meter.
16. The substrate processing apparatus according to claim 15 , further comprising
a flow rate control part for diluent gas, which controls the flow rate of the diluent gas flowing in a pipe from said diluent gas supply part to said dilution part.
17. The substrate processing apparatus according to claim 16 , further comprising
a temperature control part for sample gas, which controls the temperature of the sample gas flowing in a pipe from said extraction part to said dilution part.
18. The substrate processing apparatus according to claim 17 , further comprising
a temperature control part for diluent gas, which controls the temperature of the diluent gas flowing in a pipe from said diluent gas supply part to said dilution part.
19. The substrate processing apparatus according to claim 18 , further comprising
a container for accommodating a gas pipe line including said concentration meter, said first flowmeter and said second flowmeter; and
a jet part for jetting the diluent gas of which temperature is controlled by said temperature control part for diluent gas into said container.
20. The substrate processing apparatus according to claim 19 , wherein
said diluent gas supply part supplies a carrier gas as a diluent gas.