Formation of single-crystal silicon carbide
View Patent ↗The invention concerns a device ( 10 ) for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber ( 20 ) containing a substrate ( 42 ) whereat is formed a polycrystalline source of said body and a monocrystalline germ ( 46 ) of said body; a second chamber ( 14 ), said substrate being arranged between the two chambers; means for input ( 36 ) of gaseous precursors of said body into the second chamber capable of bringing about deposition of said body in polycrystalline form on the substrate; and heating means ( 26 ) for maintaining the substrate at a temperature higher than the temperature of the germ so as to bring about sublimation of the polycrystalline source and the deposition on the germ of said body in monocrystalline form.
1. A device for forming in the single-crystal state a compound, having an incongruent evaporation and existing in single-crystal or polycrystalline form, comprising:
a first sublimation enclosure containing a single-crystal germ of said compound;
a second supply enclosure;
a substrate arranged between the first sublimation and second supply enclosures and separating the second supply enclosure from the first sublimation enclosure;
means for supplying gas precursors of said compound into the second supply enclosure, said gas precursors causing the deposition of said compound in polycrystalline form on the substrate in said second supply enclosure; and
heating means for maintaining the substrate at a temperature greater than the germ temperature to cause the sublimation of the polycrystalline source formed by said gas precursors and the deposition on the germ of said compound in single-crystal form,
wherein the substrate is permeable to the gases originating from the sublimation of the polycrystalline source or allows the diffusion therethrough of the polycrystalline source.
2. The device of claim 1 , wherein the first sublimation enclosure is defined by a first cylindrical wall, a cover, on which the germ is attached, at least partly covering one end of the first wall, and the substrate at least partly covering the opposite end of the first wall, said substrate being permeable.
3. The device of claim 2 , wherein the second supply enclosure is defined by a second cylindrical wall arranged in prolongation of the first cylindrical wall on the side of the substrate, and the first and second cylindrical walls are surrounded with a tube which delimits with the first and second cylindrical walls a tubular recess, the second supply enclosure communicating with said tubular recess.
4. The device of claim 3 , further comprising means for generating a gas flow in the tubular recess to exhaust the gases present in the second supply enclosure..
5. The device of claim 4 , wherein the heating means comprise at least one induction spiral surrounding the tube and conducting an A.C. current to induce induction currents in the tube only.
6. The device of claim 2 , wherein the cover is shiftably assembled with respect to the first cylindrical wall along the axis (z) of the first cylindrical wall.