Etching

1. An etching method, comprising:

applying a first electromagnetic radiation to an area of a structure, thereby altering a characteristic of the structure in the area, wherein the area is a subset of the structure; and

applying a second electromagnetic radiation to the structure, the second electromagnetic radiation configured to selectively ablate the structure based on the characteristic of the structure, wherein the second electromagnetic radiation ablates the structure where the characteristic is unaltered.

2. A selective etching method, comprising:

applying a first laser to a target area of a structure, thereby altering a characteristic of the structure in the target area, wherein the target area is a subset of the structure; and

applying a second laser to the structure, the second laser configured to selectively ablate the structure based on the characteristic, wherein the second laser ablates the structure where the characteristic is unaltered.

3. A selective etching method, comprising:

exposing a target area of a structure to a first laser, thereby altering a surface characteristic of the structure in the target area; and

exposing the structure to a second laser configured to ablate a surface layer of the structure only where the surface characteristic is unaltered.

4. The selective etching method of claim 3 , where exposing the target area of the structure to the first laser includes placing a mask intermediate the first laser and the structure, the mask configured to shield a non-target area of the structure from the first laser.

5. The selective etching method of claim 3 , includes placing a galvo head system intermediate the first laser and the structure, the galvo head system configured to direct the first laser to the target area of the structure.

6. The selective etching method of claim 3 , includes moving a stage where the structure is located to direct the first laser to the target area of the structure.

7. The selective etching method of claim 3 , where the first laser is a UV laser and the second laser is a YAG laser.

8. The selective etching method of claim 3 , where the surface layer is initially formed of substantially amorphous silicon.

9. The selective etching method of claim 8 , where the first laser has a fluence of approximately 300 mJ/cm 2 to approximately 700 mJ/cm 2 , and a wavelength of approximately 200 nanometers to approximately 850 nanometers.

10. The selective etching method of claim 9 , where the second laser has a fluence of approximately 500 mJ/cm 2 to approximately 2500 mJ/cm 2 , and a wavelength of approximately 300 nanometers to approximately 750 nanometers.

11. The selective etching method of claim 10 , where applying the first laser includes applying a first laser beam in one or more pulses having a pulse length of 5 nanoseconds to approximately 50 nanoseconds, and applying the second laser includes applying a second laser beam in one or more pulses having a pulse length of approximately 5 nanoseconds to approximately 50 nanoseconds.

12. The selective etching method of claim 10 , where the first laser is a UV laser, and the second laser is a YAG laser.

13. The selective etching method of claim 3 , where the surface characteristic is crystallinity.

14. The selective etching method of claim 3 , where applying the first laser includes melting the target area, and allowing the target area to recrystallize.

15. A selective etching method, comprising:

applying a first laser beam to a target area of a structure, the first laser beam selected to alter a surface characteristic in the target area; and

applying a second laser beam to the structure, the second laser beam configured to selectively ablate a surface layer of the structure based on whether the surface characteristic has been altered, where the second laser beam ablates the surface aver of the structure where the surface characteristic is unaltered.