IP Library › Granted Patent US 7,656,926
Granted Patent B2
US 7,656,926 · App. 12/153,650 · Granted Feb 2, 2010

Optical connection device and method of fabricating the same

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 7,656,926
App. No.
12/153,650
Granted
Feb 2, 2010
Kind
B2
Abstract

Provided is an optical connection device and a method of fabricating the same. The optical connection device includes a laser diode formed on a substrate, a photodiode that is formed on the laser diode and has an aperture which is an exit of light emitted from the laser diode, and a plurality of electrode pads connected to electrodes for the laser diode and the photodiode on the substrate. A direction in which the light of the laser diode is emitted is opposite to a bonding direction between the laser diode and the substrate with respect to the laser diode.

Claims (28)

1. An optical connection device comprising:

a laser diode formed on a substrate;

a photodiode that is formed on the laser diode and has an aperture which is an exit of light emitted from the laser diode; and

a plurality of electrode pads connected to electrodes for the laser diode and the photodiode on the substrate,

wherein a direction in which the light of the laser diode is emitted is opposite to a bonding direction between the laser diode and the substrate with respect to the laser diode.

2. The optical connection device of claim 1 , wherein the laser diode has a bottom emission structure.

3. The optical connection device of claim 2 , wherein the laser diode is a vertical cavity surface emitting laser (VCSEL).

4. The optical connection device of claim 1 , wherein the photodiode comprises an aperture through which light from the laser diode is emitted.

5. The optical connection device of claim 1 , wherein the laser diode and the photodiode are flip chip bonded with the plurality of electrode pads.

6. A method of fabricating an optical connection device, comprising:

forming a photodiode layer on a first substrate;

forming a laser diode layer on the photodiode layer;

forming a laser diode structure by etching the laser diode layer;

forming a pad layer covering a side of the laser diode structure on the first substrate;

forming a first metal post connected to a lower electrode of the laser diode and a second metal post connected to an electrode formed on the photodiode layer in the pad layer;

flip chip bonding the first substrate and a second substrate on which electrode pads are formed to correspond to the first and second metal posts and an upper electrode of the laser diode so that the electrode pads of the second substrate are connected to the first and second metal posts and the upper electrode of the laser diode; and

forming an aperture for emitting the laser light from the laser diode by etching the photodiode layer so as to be exposed a predetermined region of the laser diode.

7. The method of claim 6 , wherein the forming of the first and second metal posts comprises:

etching a region of the pad layer where the first and second metal posts are formed; and

forming the first and second metal posts in the etched region using an electroplating method.

8. The method of claim 6 , wherein the forming of the pad layer comprises forming the pad layer using polyimide or epoxy.

9. The method of claim 6 , wherein the first and second metal posts are formed of Au.

10. The method of claim 6 , further comprising forming an etch stopper layer on the first substrate, wherein the forming the photodiode layer comprises forming the photodiode layer on the etch stopper layer.

11. The method of claim 6 , further comprising removing the first substrate before the forming of the aperture.

12. The method of claim 11 , wherein the forming of the aperture further comprises:

forming a first through hole by patterning a region of the photodiode layer and the laser diode layer corresponding to the second metal post;

forming an insulating layer to form a second through hole on a sidewall of the first through hole; and

forming an electrode connected to the second metal post on the photodiode layer by filling the second through hole with a metal material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 22, 2008
From: RYU, HAN-YOUL; HA, KYOUNG-HO
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 021041/0801 →
Priority Claims (1)
KR 10-2008-0002640 · Jan 9, 2008 · national
Continuity (1)
Related Publication 20090175307A1 · Jul 9, 2009