Apparatus and method for controlled particle beam manufacturing
A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.
1. A method of implanting particles into a workpiece, the method comprising:
forming a digital beam comprising a steady stream of pulsed charged particles where the travel of each pulse is temporally synchronized with geometry of a deflector for deflecting each pulse resulting in independent control of each pulse; and independently directing the each pulse towards the workpiece in an exposure chamber.
2. The method of claim 1 , wherein a dosage of the digital beam is less than about 5×10 17 charged particles/cm 2 .
3. The method of claim 1 , wherein a dosage of the digital beam is less than about 5×10 16 charged particles/cm 2 .
4. The method of claim 1 , wherein a dosage of the digital beam is less than about 5×10 14 charged particles/cm 2 .
5. The method of claim 1 , wherein a dosage of the digital beam is less than about 5×10 13 charged particles/cm 2 .
6. The method of claim 1 , wherein a dosage of the digital beam is less than about 5×10 12 charged particles/cm 2 .
7. The method of claim 1 , wherein a dosage of the digital beam is less than about 5×10 11 charged particles/cm 2 .
8. The method of claim 1 , wherein a dosage of the digital beam is less than about 5×10 10 charged particles/cm 2 .
9. The method of claim 1 , wherein the workpiece is resistless while directing the digital beam.
10. The method of claim 1 , further comprising, during directing the digital beam, exposing a surface of the workpiece to a reactant.
11. The method of claim 1 , further comprising annealing the implanted particles.
12. The method of claim 1 , wherein forming the digital beam comprises:
forming a stream of the particles;
collimating the stream along an axis of propagation; and
digitizing the stream.
13. The method of claim 1 , wherein forming the digital beam comprises creating temporally and spatially resolved digital flashes comprising at least one particle per digital flash.
14. The method of claim 1 , wherein directing the digital beam comprises:
deflecting the digital beam using a series of deflection stages disposed longitudinally along an axis of propagation of the beam; and
demagnifying the digital beam.
15. A workpiece manufactured by the method of claim 1 .
16. A method of implanting at least one dopant into a workpiece, the method comprising:
forming a beam comprising at least one ion species;
altering at least a spacing between ions in the beam so as to convert the beam into a digital beam; and exposing the digital beam onto the workpiece.
17. The method of claim 16 , wherein the parameter comprises ion species.
18. The method of claim 16 , wherein the parameter comprises beam energy.
19. The method of claim 18 , wherein altering the beam energy comprises varying the beam energy between about 5 and 500 keV.
20. The method of claim 18 , wherein altering the beam energy comprises varying the beam energy between about 5 and 200 keV.
21. The method of claim 18 , wherein altering the beam energy is during directing the beam across a distance of about 20 nm on the workpiece.
22. The method of claim 16 , wherein the parameter comprises a density of particles in the beam.
23. The method of claim 16 , wherein altering the parameter is during directing the beam across a transistor on the workpiece.
24. The method of claim 16 , wherein altering the parameter is during directing the beam across a die on the workpiece.
25. The method of claim 16 , wherein forming the beam comprises forming a digital beam.
26. A workpiece manufactured by the method of claim 16 .
27. A method of processing to implant particles into a workpiece, the method comprising:
forming a digital beam comprising said particles;
adjusting a spacing of said particles to conform to a geometry of deflector; and
directing the digital beam towards the workpiece on a movable stage in an exposure chamber.
28. A method of implanting at least one dopant into a workpiece, the method comprising:
directing a digital beam comprising at least one ion species onto the workpiece; and
during the directing, altering at least one parameter of the digital beam to conform to a parameter of a deflector for deflecting the ions species.