Non-volatile resistance-switching oxide thin film devices
View Patent ↗Non-volatile resistance-switching oxide films, and devices therewith, are disclosed. One embodiment of a suitable device is composed of a SRO-CZO thin film having a thickness of from about 6 to about 30 nm, and composed of from about 3 to about 10 molar % of a SrRuO 3 conducting oxide dopant and from about 90 to about 97 molar % of a CaZrO 3 insulating oxide material.
1. A thin film, comprising one or more oxide layers each comprising a conducting oxide dopant and an insulating oxide material, the total thickness of the one or more oxide layers being at least about 6 nm, the one or more oxide layers being selected from the following table:
Oxide
Molar %
Layer Type,
Conducting
Conducting
Insulating
Molar %
Thickness
Oxide
Oxide
Oxide
Insulating
(nm)
Dopant
Dopant
Material
Oxide Material
SRO-CZO,
SrRuO 3
from about
CaZrO 3
from about 90 to
up to about
3 to about
about 97 molar %
30 nm
10 molar %
LNO-CZO,
LaNiO 3
from about
CaZrO 3
from about 60 to
up to about
10 to about
about 90 molar %
40 nm
40 molar %
SRO-LAO,
SrRuO 3
from about
LaAlO 3
from about 87 to
up to about
6 to about
about 94 molar %
40 nm
13 molar %
LNO-LAO,
LaNiO 3
from about
LaAlO 3
from about 87 to
up to about
6 to about
about 94
40 nm.
13 molar %
molar %.
2. The thin film of claim 1 , wherein each of the oxide layers is characterized as being a solid solution of the insulating oxide material and the conducting oxide dopant.
3. The thin film of claim 1 , further comprising one or more isolation layers surmounting at least a portion of the oxide layer, the one or more isolation layers being selected from the following table:
Isolation
Conducting
Molar %
Insulating
Molar %
Layer Type,
Oxide
Conducting
Oxide
Insulating
Thickness (nm)
Dopant
Oxide Dopant
Material
Oxide Material
SRO-CZO,
SrRuO 3
from 0 to
CaZrO 3
from about 93 to
up to about 10 nm
about 7 molar %
100 molar %
LNO-CZO,
LaNiO 3
from 0 to
CaZrO 3
from about 75 to
up to about 10 nm
about 25 molar %
100 molar %
SRO-LAO,
SrRuO 3
from 0 to
LaAlO 3
from about 90 to
up to about 10 nm
about 10 molar %
100 molar %
LNO-LAO,
LaNiO 3
from 0 to
LaAlO 3
from about 90 to
up to about 10 nm
about 10 molar %
100 molar %.
4. The thin film of claim 3 , wherein the molar % of the conducting oxide dopant in at least one of the isolation layers is less than the molar % of the conducting oxide dopant in the oxide layer.
5. The thin film of claim 1 , wherein the oxide layer is characterized as comprising metallic islands of SrRuO 3 , LaNiO 3 , or both.
6. The thin film of claim 1 , whereupon subjecting the thin film to a positive electrical bias, a negative electrical bias, or both, gives rise to the thin film being characterized as having a switchable resistance.
7. A switchable-resistance thin film device, comprising:
at least one first electrode;
one or more resistance-switching oxide layers, the total thickness of the one or more resistance-switching oxide layers being at least about 6 nm, at least one of the resistance-switching oxide layers situated adjacent to the first electrode, wherein each of the resistance switching oxide layers comprises a conducting oxide dopant and an insulating oxide material selected from the following table:
Resistance-
Switching Oxide
Conducting
Molar %
Insulating
Molar %
Layer Type,
Oxide
Conducting
Oxide
Insulating
Thickness (nm)
Dopant
Oxide Dopant
Material
Oxide Material
SRO-CZO
SrRuO 3
from about 3 to
CaZrO 3
from about 90 to
up to about 30 nm
about 10 molar %
about 97 molar %
LNO-CZO
LaNiO 3
from about 10 to
CaZrO 3
from about 60 to
up to about 40 nm
about 40 molar %
about 90 molar %
SRO-LAO
SrRuO 3
from about 6 to
LaAlO 3
from about 87 to
up to about 40 nm
about 13 molar %
about 94 molar %
LNO-LAO
LaNiO 3
from about 6 to
LaAlO 3
from about 87 to
up to about 40 nm.
about 13 molar %
about 94 molar %
and at least one second electrode situated adjacent to at least one of the resistance-switching oxide layers, wherein at least a portion of each of the resistance-switching oxide layers is situated between at least a portion of the first electrode and at least a portion of the second electrode.
8. The switchable-resistance thin film device of claim 7 , wherein each of the resistance-switching oxide layers is characterized as being a solid solution of the insulating oxide material and the conducting oxide dopant.
9. The switchable-resistance thin film device of claim 7 , wherein at least one first electrode, at least one second electrode, or any combination thereof, are characterized as being a thin film.
10. The switchable-resistance thin film device of claim 7 , wherein the electrodes comprise at least one conducting oxide material, Pt, Pd, Ni, Au, Ag, Cu, Ir, Rh, Co, Os, Ru, Fe, Re, Mn, W, Mo, Cr, Ta, Nb, V, Hf, Zr, Ti, Al, doped Si, at least one conducting silicide, conducting metal nitride, conducting metal carbide, conducting metal boride, or any combination thereof.
11. The switchable-resistance thin film device of claim 10 , wherein the conducting oxide material comprises SrRuO 3 , LaNiO 3 , CaRuO 3 , BaRuO 3 , PrNiO 3 , NdPrO 3 , PmNiO 3 , SmNiO 3 , or any combination thereof.
12. The switchable-resistance thin film device of claim 10 , wherein the insulating oxide material comprises CaZrO 3 , SrZrO 3 , BaZrO 3 , CaHfO 3 , SrHfO 3 , BaHfO 3 , LaAlO 3 , PrAlO 3 , NdAlO 3 , PmAlO 3 , SmAlO 3 , EuAlO 3 , GdAlO 3 , TbAlO 3 , DyAlO 3 , HoAlO 3 , ErAlO 3 , TmAlO 3 , YbAlO 3 , LuAlO 3 , YAlO 3 , or any combination thereof.
13. The switchable-resistance thin film device of claim 7 , wherein the first electrode, the second electrode, or both, are epitaxial with the resistance-switching oxide layer.
14. The switchable-resistance thin film device of claim 9 , wherein at least one thin film electrode is situated adjacent to a substrate.
15. The switchable-resistance thin film device of claim 14 , wherein the substrate comprises SrTiO 3 .
16. The switchable-resistance thin film device of claim 7 , wherein the substrate and first electrode are epitaxial.
17. A switchable-resistance thin film device, comprising:
one or more resistance-switching oxide layers each comprising a conducting oxide dopant and an insulating oxide material, the total thickness of the one or more resistance-switching oxide layers being at least about 6 nm, wherein each of the resistance-switching oxide layers is selected from the following table:
Resistance-
Switching Oxide
Conducting
Molar %
Insulating
Molar %
Layer Type,
Oxide
Conducting
Oxide
Insulating
Thickness (nm)
Dopant
Oxide Dopant
Material
Oxide Material
SRO-CZO,
SrRuO 3
from about 3 to
CaZrO 3
from about 90 to
up to about 30 nm
about 10 molar %
about 97 molar %
LNO-CZO,
LaNiO 3
from about 10 to
CaZrO 3
from about 60 to
up to about 40 nm
about 40 molar %
about 90 molar %
SRO-LAO,
SrRuO 3
from about 6 to
LaAlO 3
from about 87 to
up to about 40 nm
about 13 molar %
about 94 molar %
LNO-LAO,
LaNiO 3
from about 6 to
LaAlO 3
from about 87 to
up to about 40 nm.
about 13 molar %
about 94 molar %
at least one isolation layer situated adjacent to at least a portion of one of the resistance-switching oxide layers, the at least one isolation layer being selected from the following table:
Isolation
Conducting
Molar %
Insulating
Molar %
Layer Type,
Oxide
Conducting
Oxide
Insulating
Thickness (nm)
Dopant
Oxide Dopant
Material
Oxide Material
SRO-CZO,
SrRuO 3
from 0 to about
CaZrO 3
from about 93 to
up to about 10 nm
7 molar %
100 molar %
LNO-CZO,
LaNiO 3
from 0 to about
CaZrO 3
from about 75 to
up to about 10 nm
25 molar %
100 molar %
SRO-LAO,
SrRuO 3
from 0 to about
LaAlO 3
from about 90 to
up to about 10 nm
10 molar %
100 molar %
LNO-LAO,
LaNiO 3
from 0 to about
LaAlO 3
from about 90 to
up to about 10 nm.
10 molar %
100 molar %
; and
at least one first electrode being situated adjacent to at least one isolation layer, and at least one second electrode being situated adjacent to at least one resistance-switching oxide layer, to a second isolation layer, or both.
18. The switchable-resistance thin film device of claim 17 , wherein each of the switchable-resistance oxide layers is characterized as being a solid solution of the insulating oxide material and the conducting oxide dopant.
19. The switchable-resistance thin film device of claim 17 , wherein one resistance-switching oxide layer is situated adjacent on one side to a first isolation layer and situated adjacent on a second side to a second isolation layer, wherein the first isolation layer is situated adjacent to a first electrode, and the second isolation layer is situated adjacent to a second electrode.
20. The switchable-resistance thin film device of claim 17 , wherein the at least one first electrode, the at least one second electrode, or any combination thereof, are characterized as being a thin film.
21. The switchable-resistance thin film device of claim 17 , wherein at least one of the electrodes comprise at least one conducting oxide material, Pt, Pd, Ni, Au, Ag, Cu, Ir, Rh, Co, Os, Ru, Fe, Re, Mn, W, Mo, Cr, Ta, Nb, V, Hf, Zr, Ti, Al, doped Si, at least one conducting silicide, conducting metal nitride, conducting metal carbide, conducting metal boride, or any combination thereof.
22. The switchable-resistance thin film device of claim 21 , wherein the conducting oxide material comprises SrRuO 3 , LaNiO 3 , CaRuO 3 , BaRuO 3 , PrNiO 3 , NdPrO 3 , PmNiO 3 , SmNiO 3 , or any combination thereof.
23. The switchable-resistance thin film device of claim 10 , wherein the insulating oxide material comprises CaZrO 3 , SrZrO 3 , BaZrO 3 , CaHfO 3 , SrHfO 3 , BaHfO 3 , LaAlO 3 , PrAlO 3 , NdAlO 3 , PmAlO 3 , SmAlO 3 , EuAlO 3 , GdAlO 3 , TbAlO 3 , DyAlO 3 , HoAlO 3 , ErAlO 3 , TmAlO 3 , YbAlO 3 , LuAlO 3 , YAlO 3 , or any combination thereof.
24. The switchable-resistance thin film device of claim 17 , wherein the at least one first electrode, the at least one second electrode, or any combination thereof, are epitaxial with the resistance-switching oxide layer.
25. The switchable-resistance thin film device of claim 20 , wherein at least one thin film electrode is situated adjacent to a substrate.
26. The switchable-resistance thin film device of claim 25 , wherein the substrate comprises SrTiO 3 .
27. The switchable-resistance thin film device of claim 25 , wherein the substrate and first electrode are substantially epitaxial.