IP Library Granted Patent US 7,672,176
Granted Patent B2
US 7,672,176 · App. 11/948,486 · Granted Mar 2, 2010

Writing circuit for a phase change memory

Assignees: Industrial Technology Research Institute; Powerchip Semiconductor Corp.; Nanya Technology Corporation; Promos Technologies Inc.; Winbond Electronics Corp.
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Quick Facts
Patent No.
US 7,672,176
App. No.
11/948,486
Granted
Mar 2, 2010
Kind
B2
Abstract

A writing circuit for a phase change memory is provided. The writing circuit comprises a driving current generating circuit, a first switch device, a first memory cell and a second switch device. The driving current generating circuit provides a writing current to the first memory cell. The first switch device is coupled to the driving current generating circuit. The first memory cell is coupled between the first switch device and the second switch device. The second switch device is coupled between the first memory cell and a ground, wherein when the driving current generating circuit outputs the writing current to the first memory cell, the second switch device is turned on after the first switch device has been turned on for a first predetermined time period.

Claims (28)

1. A writing circuit for a phase change memory, comprising:

a driving current generating circuit to provide a writing current;

a first switch device coupled to the driving current generating circuit;

a first memory cell coupled to the first switch device; and

a second switch device coupled between the first memory cell and a ground,

wherein when the driving current generating circuit outputs the writing current to the first memory cell, the second switch device is turned on after the first switch device has been turned on for a first predetermined time period;

wherein the driving current generating circuit comprises:

a current generator; and

an output switch device coupled to the current generator; and

wherein the output switch delays a current from the current generator by a second predetermined time period to generate the writing current.

2. The circuit as claimed in claim 1 , further comprising a transmission gate coupled between the first switch device and the first memory cell.

3. The circuit as claimed in claim 1 , further comprising a second memory cell, wherein the first memory cell and the second memory cannot receive the writing current at the same time.

4. The circuit as claimed in claim 1 , further comprising a capacitor coupled to the first switch device and the ground.

5. The circuit as claimed in claim 1 , further comprising a third switch device coupled to a capacitor and the first switch device, wherein when the first switch device is turned on, meanwhile, the third switch device is turned on.

6. A writing circuit for a phase change memory, comprising:

a driving current generating circuit to provide a writing current;

a first switch device coupled to the driving current generating circuit;

a first memory cell coupled to the first switch device; and

a second switch device coupled between the first memory cell and a ground,

wherein when the driving current generating circuit outputs the writing current to the first memory cell, the second switch device is turned on after the first switch device has been turned on for a first predetermined time period;

wherein the driving current generating circuit comprises:

an output switch device coupled to the first switch device, comprising a control terminal, wherein when the control terminal receives a first voltage, the output switch device is turned on and outputs the writing current; and

a multiplexer receiving the first voltage and a second voltage, controlled by a first control signal, wherein when the multiplexer receives the first control signal, the multiplex outputs the first voltage to the output switch device.

7. The circuit as claimed in claim 6 , wherein when the output switch device is turned on, the first switch device delays a second predetermined time period to transmit the writing current to the first memory cell.

8. The circuit as claimed in claim 6 , further comprising a transmission gate coupled between the first switch device and the first memory cell.

9. The circuit as claimed in claim 6 , further comprising a second memory cell, wherein the first memory cell and the second memory cannot receive the writing current at the same time.

10. The circuit as claimed in claim 6 , further comprising a capacitor coupled to the first switch device and the ground.

11. The circuit as claimed in claim 6 , further comprising a third switch device coupled to a capacitor and the first switch device, wherein when the first switch device is turned on, meanwhile, the third switch device is turned on.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 12, 2011
From: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
To: HIGGS OPL. CAPITAL LLC
Reel/Frame 027364/0397 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 10, 2010
From: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE; POWERCHIP SEMICONDUCTOR CORP.; NANYA TECHNOLOGY CORPORATION; PROMOS TECHNOLOGIES INC.; WINBOND ELECTRONICS CORP.
To: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Reel/Frame 024061/0452 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 20, 2008
From: CHIANG, PEI-CHIA; SHEU, SHYH-SHYUAN; LIN, LIEH-CHIU
To: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE; POWERCHIP SEMICONDUCTOR CORP.; NANYA TECHNOLOGY CORPORATION; PROMOS TECHNOLOGIES INC.; WINBOND ELECTRONICS CORP.
Reel/Frame 020530/0093 →
Priority Claims (1)
TW 96121330 A · Jun 13, 2007 · national
Continuity (1)
Related Publication 20080310217A1 · Dec 18, 2008