Power supply control device and precharge processing method
Upon receiving a start instruction, a control device turns on first and third system main relays, and performs precharge processing for charging a capacitor. Here, a limiting resistor for preventing an inrush current into the capacitor in a discharged state at the time of start is not provided in a load drive device. The control device controls a gate voltage of a power MOSFET of the third system main relay such that the power MOSFET operates in a saturation region, in a range not exceeding a maximum rated power.
1. A power supply control device comprising:
a DC power supply;
a relay provided between one electrode of said DC power supply and a load device;
a semiconductor switching element connected in parallel to said relay; and
a control unit performing precharge processing for supplying electric charges from said DC power supply to said load device through said semiconductor switching element before turn-on of said relay; and
said control unit being configured to control one of:
a gate voltage of said semiconductor switching element to be a first voltage threshold, so that a drain current of said semiconductor switching element at a time of start of said precharge processing is set to a value corresponding to a first drain current threshold such that power loss of said semiconductor switching element does not exceed maximum rated power of said semiconductor switching element, and
a base voltage of said semiconductor switching element such that a first collector current value at a time of start of said precharge processing is a value corresponding to a first collector threshold such that rower loss of said semiconductor switching element does not exceed maximum rated power of said semiconductor switching element.
2. The power supply control device according to claim 1 , wherein
said semiconductor switching element is implemented by a field-effect transistor, and
said control unit controls a gate voltage of said field-effect transistor such that said field-effect transistor operates in a saturation region.
3. The power supply control device according to claim 1 , wherein
said semiconductor switching element is implemented by a bipolar transistor such that said bipolar transistor operates in an active region.
4. A precharge processing method of performing precharge from a power supply device to a load device, said power supply device including a DC power supply, a relay provided between one electrode of said DC power supply and said load device, and a semiconductor switching element connected in parallel to said relay, comprising:
a first step of calculating one of:
a gate voltage of said semiconductor switching element to be a first voltage threshold, such that a drain current of said semiconductor switching element at a time of start of said precharge processing is a value corresponding to a first drain current threshold such that power loss of said semiconductor switching element does not exceed maximum rated power of said semiconductor switching element, and
a base voltage of said semiconductor switching element such that a first collector current value at a time of start of said precharge processing is a value corresponding to a first collector threshold such that power loss of said semiconductor switching element does not exceed maximum rated power of said semiconductor switching element;
a second step of outputting one of the calculated gate voltage and calculated base voltage to a control electrode of said semiconductor switching element;
a third step of determining whether said precharge performed through said semiconductor switching element is completed; and
a fourth step of turning on said relay when it is determined that said precharge is completed.
5. The precharge processing method according to claim 4 , wherein
said semiconductor switching element is implemented by a field-effect transistor, and
in said first step, a gate voltage of said field-effect transistor is calculated such that said field-effect transistor operates in a saturation region.
6. The precharge processing method according to claim 4 , wherein
said semiconductor switching element is implemented by a bipolar transistor such that said bipolar transistor operates in an active region.