Light emitting device having vertical structure and method for manufacturing the same
A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of damping impact generated during a substrate separation process and achieving an improvement in mass productivity, are disclosed. The light emitting device includes a semiconductor layer having a multilayer structure, a first electrode arranged at one surface of the semiconductor layer, a metal support arranged on the first electrode, and an impact damping layer arranged between the first electrode and the metal support, and made of a metal having a ductility higher than a ductility of a metal for the metal support.
1. A light emitting device having a vertical structure, comprising:
a semiconductor layer having a multilayer structure, the semiconductor layer having an inclined side surface;
a first electrode arranged on one surface of the semiconductor layer, the first electrode comprising a transparent ohmic electrode directly on the surface of the semiconductor layer and a reflection electrode on the transparent ohmic electrode;
a support layer arranged on the first electrode;
a bonding layer between the first electrode and the support layer; and
a metal layer arranged between the first electrode and the bonding layer, wherein the ductility of the metal layer is higher than the ductility of the support layer.
2. The light emitting device according to claim 1 , further comprising a second electrode arranged on a second surface of the semiconductor layer.
3. The light emitting device according to claim 1 , wherein the metal layer includes at least one of In, Sn, Ag, Au, Pt, and Al.
4. The light emitting device according to claim 1 , wherein the metal layer has a thickness of 1 to 10 μm.
5. The light emitting device according to claim 1 , wherein the first electrode covers the semiconductor layer.
6. The light emitting device according to claim 1 , wherein the semiconductor layer comprises:
an n-type semiconductor layer;
an active layer arranged adjacent to the n-type semiconductor layer; and
a p-type semiconductor layer arranged adjacent to the active layer.
7. The light emitting device according to claim 1 , wherein the semiconductor layer comprises a GaN-based semiconductor layer.
8. The light emitting device according to claim 1 , wherein the support layer includes at least one of Cu, Ni, and Au.
9. The light emitting device according to claim 1 , wherein the support layer has a thickness of 30 to 200 μm.
10. The light emitting device according to claim 1 , further comprising a passivation layer covering a side surface of the semiconductor layer.
11. A light emitting device having a vertical structure, comprising:
a semiconductor layer having a multilayer structure;
a first electrode arranged on one surface of the semiconductor layer, the first electrode comprising a transparent ohmic electrode directly on the surface of the semiconductor layer and a reflection electrode on the transparent ohmic electrode;
a second electrode arranged on a second surface of the semiconductor layer, opposite the one surface;
a passivation layer arranged at on a side surface of the semiconductor layer;
a support layer arranged on the first electrode;
a bonding layer between the first electrode and the support layer; and
a metal layer arranged between the first electrode and the bonding layer, wherein the ductility of the metal layer is higher than the ductility of the support layer.
12. The light emitting device according to claim 11 , wherein the support layer is arranged on the first electrode and around the passivation layer.
13. The light emitting device according to claim 11 , wherein the semiconductor layer has an inclined side surface.