Silicon germanium heterostructure barrier varactor
View Patent ↗Methods and heterostructure barrier varactor (HBV) diodes optimized for application with frequency multipliers at providing outputs at submillimeter wave frequencies and above. The HBV diodes include a silicon-containing substrate, an electrode over the silicon-containing substrate, and one or more heterojunction quantum wells of alternating layers of Si and SiGe of one or more electrodes of the diode. Each SiGe quantum well preferably has a floating SiGe layer between adjacent SiGe gradients followed by adjacent Si layers, such that, a single homogeneous structure is provided characterized by having no distinct separations. The plurality of Si/SiGe heterojunction quantum wells may be symmetric or asymmetric.
1. A heterostructure barrier varactor (HBV) diode comprising:
a silicon-containing substrate;
an electrode over said silicon-containing substrate; and
at least one heterojunction quantum well of alternating layers of Si and SiGe of said electrode, said layer of said SiGe comprises a floating SiGe layer between adjacent SiGe gradients followed by adjacent Si layers.
2. The HBV diode of claim 1 wherein said silicon-containing substrate comprises a silicon substrate.
3. The HBV diode of claim 1 wherein said layers of Si and SiGe are epitaxially grown with an n-type material or a p-type material.
4. The HBV diode of claim 1 further including a plurality of heterojunction quantum wells of alternating layers of Si and SiGe.
5. The HBV diode of claim 1 wherein said electrode comprises an anode.
6. The HBV diode of claim 1 wherein said electrode comprises a cathode.
7. The HBV diode of claim 1 wherein said HBV diode is optimized for application with frequency multipliers at providing outputs at submillimeter wave frequencies and above.
8. The HBV diode of claim 1 wherein said HBV diode comprises a single homogeneous structure characterized by having no distinct separations between floating SiGe layer, said SiGe gradients and said Si layers.
9. The HBV diode of claim 8 further including a plurality of heterojunction quantum wells, each having a corresponding said floating SiGe layers.
10. The HBV diode of claim 1 further including said HBV diode having heterojunction quantum wells of alternating layers of Si and SiGe of both an anode and a cathode.
11. The HBV diode of claim 10 wherein said heterojunction quantum wells of said anode and said cathode are symmetric.
12. The HBV diode of claim 10 wherein said heterojunction quantum wells of said anode and said cathode are asymmetric.
13. A heterostructure barrier varactor (HBV) diode comprising:
a silicon-containing substrate;
an electrode over said silicon-containing substrate;
at least one heterojunction quantum well of alternating layers of Si and SiGe of said electrode; and
a spacer layer between said Si layer and said SiGe layer.
14. The HBV diode of claim 13 wherein said SiGe layer comprises a floating SiGe layer having SiGe gradients adjacent Si layers.
15. The HBV diode of claim 13 wherein said SiGe layer has a substantially constant Ge concentration.
16. A heterostructure barrier varactor (HBV) diode comprising:
a silicon layer;
an anode and a cathode over said silicon layer; and
a plurality of heterojunction quantum wells of one or more of said anode or said cathode comprising alternating layers of Si and SiGe.
17. The HBV diode of claim 16 wherein both said anode and said cathode each have at least one heterojunction quantum well of said alternating layers of Si and SiGe.
18. The HBV diode of claim 16 wherein said layers of SiGe comprise floating SiGe layers residing between adjacent SiGe gradients followed by adjacent Si layers characterized by having no distinct separations within said plurality of heterojunction quantum wells.