Image sensor
An image sensor pixel structure including: a photosensitive area surrounded with a peripheral area placed at the surface of a semiconductor substrate, a stack of several insulating layers alternately exhibiting different refraction coefficients and placed above the peripheral area, a microlens placed at the top of the pixel to have the pixel light converge towards the photosensitive area, and a transparent block placed substantially above the photosensitive area.
1. An image sensor pixel structure comprising:
a photosensitive area surrounded with a peripheral area placed at a surface of a semiconductor substrate,
a transparent block placed substantially above the photosensitive area, the transparent block being formed of a filtering material that only passes light beams exhibiting wavelengths belonging to a given range of values,
a stack of several insulating layers alternately exhibiting different refraction coefficients and placed above said peripheral area, and
a microlens placed above the transparent block and adapted to converge light towards the photosensitive area.
2. The pixel structure of claim 1 , wherein a refraction coefficient of said transparent block is greater than a refraction coefficient of the insulating layers of said stack.
3. The pixel structure of claim 1 , wherein a thin layer of a material exhibiting a refraction coefficient smaller than a refraction coefficient of said transparent block is placed between the transparent block and said stack.
4. The pixel structure of claim 1 , further comprising a ring-shaped reflective portion placed above said stack, the reflective portion surrounding an upper portion of said transparent block.
5. The pixel structure of claim 1 , wherein the microlens focuses the light on a plane adjacent to an upper surface of the transparent block.
6. An integrated circuit comprising an image sensor formed of an assembly of image sensor pixel structures according to claim 1 , and an interconnect network stack formed of at least one interconnect level, the at least one interconnect level comprising first and second insulating layers, each image sensor pixel structure being formed of at least one pair of insulating layers, each pair of insulating layers having a same thickness as the first and second insulating layers of the at least one interconnect level.
7. The integrated circuit of claim 6 , wherein a thickness of the transparent block of each image sensor pixel structure is smaller than a thickness of the interconnect network stack, and wherein an upper transparent block is placed above the assembly of image sensor pixel structures, a thickness of the upper transparent block being such that a cumulative thickness of the upper transparent block and the transparent block of an image sensor pixel structure is substantially equal to the thickness of the interconnect network stack.
8. The integrated circuit of claim 6 , wherein a lens of each image sensor pixel structure are shifted from a center to a periphery of the image sensor pixel structure.
9. An image sensor pixel comprising:
a pixel assembly comprising:
a semiconductor substrate;
a photosensitive area disposed on the substrate;
a transparent block disposed directly above the photosensitive area; and
at least one insulating layer disposed above the semiconductor substrate wherein the transparent block comprises a filtering material that selectively transmits light having wavelengths within a given range of values.
10. The image sensor pixel of claim 9 , wherein a peripheral area surrounds the photosensitive area and wherein the at least one insulating layer is disposed directly above the peripheral area.
11. The image sensor of claim 9 , further comprising a layer of material disposed between the transparent block and the at least one insulating layer.
12. The image sensor pixel of claim 9 , wherein the at least one insulating layer comprises a stack of several insulating layers alternately exhibiting different refraction coefficients.
13. The image sensor pixel of claim 9 , wherein a refraction coefficient of the transparent block is greater than a refraction coefficient of the at least one insulating layer.
14. The image sensor pixel of claim 9 , wherein a refraction coefficient of the layer of material is less than a refraction coefficient of the transparent block.
15. The image sensor pixel of claim 9 , wherein the pixel assembly further comprises a ring-shaped reflective portion disposed above the at least one insulating layer and surrounding at least a portion of the transparent block.
16. The image sensor pixel of claim 9 , further comprising a lens placed atop of the pixel assembly.