Optical proximity correction mask pattern
An optical proximity correction (OPC) mask pattern used in a layout for a photolithography process. An OPC mask pattern may include a first mask pattern for an active region and a second mask pattern for a gate pattern. The second mask pattern may have a plurality of micro patterns stacked at the end, which avoids unintended overlapping of the first mask pattern and the second mask pattern.
1. An apparatus comprising:
a first mask pattern for an active region of a semiconductor device; and
a second mask pattern for a gate region of a semiconductor device, wherein:
the second mask comprises ends which are bent, and
said ends that are bent comprise at least two elements that are arranged in a step formation.
2. The apparatus of claim 1 , wherein said at least two elements are at least one of contiguous and overlapping to each other.
3. The apparatus of claim 1 , wherein said at least two elements are spaced apart from each other.
4. The apparatus of claim 1 , wherein each of said at least two elements has a rectangular shape.
5. The apparatus of claim 4 , wherein at least one of said at least two elements has dimensions of approximately 130 nm by 20 nm.
6. The apparatus of claim 1 , wherein at least one of said at least two elements has a square shape.
7. The apparatus of claim 1 , wherein at least one of said at least two elements has a triangle shape.
8. The apparatus of claim 1 , wherein at least one of the first mask pattern and the second mask pattern is an optical proximity correction mask pattern for use in a photolithography process.
9. The apparatus of claim 1 , wherein said second mask pattern comprises a polymer compound.
10. The apparatus of claim 1 , wherein said second mask pattern comprises at least one of:
an aromatic cyclic polymer compound;
an aliphatic cyclic polymer compound;
an aromatic polymer compound having a relatively large carbon content;
an aliphatic cyclic polymer compound having a relatively large carbon content;
cyclic olefin;
a polymer derivatives of cyclic olefin;
cyclic acetylene;
a polymer derivatives of cyclic acetylene; and
a polymer made by polymerization of norbonene monomer.
11. A method comprising:
forming an active region of a semiconductor device using a first mask pattern; and
forming a gate region of the semiconductor device using a second mask pattern, wherein:
the second mask comprises ends which are bent, and
said ends that are bent comprise at least two elements that are arranged in a step formation.
12. The method of claim 11 , wherein said at least two elements are at least one of contiguous and overlapping to each other.
13. The method of claim 11 , wherein said at least two elements are spaced apart from each other.
14. The method of claim 11 , wherein each of said at least two elements has a rectangular shape.
15. The method of claim 14 , wherein at least one of said at least two elements has dimensions of approximately 130 nm by 20 nm.
16. The method of claim 11 , wherein at least one of said at least two elements has a square shape.
17. The method of claim 11 , wherein at least one of said at least two elements has a triangle shape.
18. The method of claim 11 , wherein at least one of the first mask pattern and the second mask pattern is an optical proximity correction mask pattern for use in a photolithography process.
19. The method of claim 11 , wherein said second mask pattern comprises a polymer compound.
20. The method of claim 11 , wherein said second mask pattern comprises at least one of:
an aromatic cyclic polymer compound;
an aliphatic cyclic polymer compound;
an aromatic polymer compound having a relatively large carbon content;
an aliphatic cyclic polymer compound having a relatively large carbon content;
cyclic olefin;
a polymer derivatives of cyclic olefin;
cyclic acetylene;
a polymer derivatives of cyclic acetylene; and
a polymer made by polymerization of norbonene monomer.