Array substrate, method of manufacturing the same and liquid crystal display apparatus having the same
An array substrate includes a plate, a switching element, an insulating layer and a pixel electrode. The plate includes a pixel region, and the switching element is disposed on the plate. The insulating layer is disposed on the plate to include an opening for a multi-domain disposed in the pixel region and a contact hole. An electrode of the switching element is partially exposed through the contact hole. The pixel electrode is disposed on the insulating layer corresponding to the pixel region, an inner surface of the opening for the multi-domain and an inner surface of the contact hole so that the pixel electrode is electrically connected to the electrode of the switching element. Therefore, the viewing angle and the image display quality of the LCD apparatus are improved, and a manufacturing process is simplified.
1. A method of manufacturing an array substrate, the method comprising:
forming a switching element on a plate including a pixel region;
forming an inorganic insulating layer on the plate, the inorganic insulating layer including an opening for a multi-domain disposed in the pixel region and a contact hole through which an electrode of the switching element is partially exposed;
forming an organic layer on the inorganic layer; and
forming a pixel electrode on the inorganic insulating layer, an inner surface of the opening for the multi-domain and an inner surface of the contact hole so that the pixel electrode is electrically connected to the electrode of the switching element, and has a first portion formed on the organic layer, a second portion directly formed on the inorganic insulating layer and a third portion formed in the opening.
2. The method of claim 1 , wherein the pixel electrode is formed by:
forming a transparent electrode on the organic layer, the inorganic insulating layer corresponding to the pixel region, the inner surface of the opening for the multi-domain and the inner surface of the contact hole;
and
forming a reflection electrode in a reflection region of the pixel region, an externally provided light being reflected from the reflection electrode,
wherein the organic layer includes a protruded portion for the multi-domain on the inorganic insulating layer to define a transmission window that is opened.
3. The method of claim 1 , wherein the pixel electrode is formed by:
forming a transparent electrode on the inorganic insulating layer, the organic layer corresponding to the pixel region, the inner surface of the opening for the multi-domain and the inner surface of the contact hole; and
forming a reflection electrode in a reflection region of the pixel region, an externally provided light being reflected from the reflection electrode,
wherein the organic layer includes the contact hole and a protruded portion for the multi-domain on the inorganic insulating layer to define a transmission window that is opened.
4. A method of manufacturing an array substrate, the method comprising:
forming an inorganic insulating layer on a plate including a pixel region having a transmission window through which an internally provided light passes, the inorganic insulating layer including a plurality of openings for a multi-domain disposed in the transmission window and a contact hole through which an electrode of a switching element is partially exposed;
forming an organic layer on the inorganic insulating layer; and
forming a pixel electrode on the organic layer, the inorganic insulating layer, an inner surface of the openings for the multi-domain and an inner surface of the contact hole so that the pixel electrode is electrically connected to the electrode of the switching element, and has a first portion formed on the organic layer, a second portion directly formed on the inorganic insulating layer and a third portion formed in the opening.
5. The method of claim 4 , further comprising:
forming a gate electrode on the plate;
forming a gate insulating layer on the plate having the gate electrode;
forming a semiconductor layer on the gate insulating layer corresponding to the gate insulating layer; and
forming a source electrode and a drain electrode that is spaced apart from the source electrode on the semiconductor layer.
6. The method of claim 5 , wherein the inorganic insulating layer is formed by:
depositing a transparent insulating material on the plate having the switching element; and
etching the deposited transparent insulating material and the gate insulating layer to form the openings for the multi-domain and the contact hole.
7. The method of claim 5 , wherein the inorganic insulating layer is formed by:
depositing a transparent insulating material on the plate having the switching element; and
etching the deposited transparent insulating material to form the openings for the multi-domain and the contact hole.
8. The method of claim 7 , further comprising forming the organic layer including a protruded portion for the multi-domain on the inorganic insulating layer, the organic layer defining the transmission window that is opened.
9. The method of claim 8 , wherein the pixel electrode is formed by:
forming a transparent electrode on the organic layer corresponding to the pixel region, the inner surface of the openings for the multi-domain and the inner surface of the contact hole; and
forming a reflection electrode in a reflection region of the pixel region, an externally provided light being reflected from the reflection electrode.
10. The method of claim 8 , wherein the pixel electrode is formed by:
forming a transparent electrode on the organic layer, the inorganic insulating layer corresponding to the pixel region, the inner surface of the opening for the multi-domain and the inner surface of the contact hole;
and
forming a reflection electrode in a reflection region of the pixel region, an externally provided light being reflected from the reflection electrode.