IP Library › Granted Patent US 7,723,697
Granted Patent B2
US 7,723,697 · App. 11/859,219 · Granted May 25, 2010

Techniques for optical ion beam metrology

Assignee: Varian Semiconductor Equipment Associates, Inc.
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Quick Facts
Patent No.
US 7,723,697
App. No.
11/859,219
Granted
May 25, 2010
Kind
B2
Abstract

Techniques for providing optical ion beam metrology are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for controlling beam density profile, the apparatus may include one or more camera systems to capture at least one image of an ion beam and a control system coupled to the one or more camera systems to control a beam density profile of the ion beam. The control system may further include a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop to improve dose and angle uniformity.

Claims (23)

1. An apparatus comprising:

a post that intersects an ion beam to create a shadow;

one or more camera systems to capture at least one image of the ion beam including the shadow; and

a control system coupled to the one or more camera systems to control an angular uniformity of the ion beam in response to the at least one image of the ion beam including the shadow.

2. The apparatus of claim 1 , wherein the one or more camera systems comprises one or more moveable minors.

3. The apparatus of claim 1 , wherein the one or more camera systems are positioned at various positions along an ion beam path.

4. The apparatus of claim 1 , wherein the one or more camera systems comprise at least one swivel camera.

5. The apparatus of claim 1 , wherein the control system further comprises a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop.

6. The apparatus of claim 1 , wherein the one or more camera systems comprises at least one color filter to enhance the image of the ion beam.

7. The apparatus of claim 6 , wherein the enhanced image of the ion beam provides at least one of the following additional information about ions in the beam: type, density, and charge.

8. The apparatus of claim 1 , further comprising one or more gases to enhance the image of the ion beam.

9. A method comprising:

driving a post to intersect an ion beam to create a shadow;

capturing at least one image of the ion beam including the shadow with one or more camera systems; and

coupling a control system to the one or more camera systems to control an angular uniformity of the ion beam based on the at least one image of the ion beam including the shadow.

10. The method of claim 9 , wherein the one or more camera systems comprises one or more moveable mirrors.

11. The method of claim 9 , wherein the one or more camera systems are positioned at various positions along an ion beam path.

12. The method of claim 9 , wherein the one or more camera systems comprise at least one swivel camera.

13. The method of claim 9 , wherein the control system further comprises a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop.

14. The method of claim 9 , wherein the one or more camera systems comprises at least one color filter to enhance the image of the ion beam.

15. The method of claim 14 , wherein the enhanced image of the ion beam provides at least one of the following additional information about ions in the beam: type, density, and charge.

16. The method of claim 9 , further comprising inserting one or more gases to enhance the image of the ion beam.

17. A downloadable, computer-readable media comprising code to perform the acts of the method of claim 9 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 21, 2007
From: PEREL, ALEXANDER S.; PLATOW, WILHELM; CHANEY, CRAIG; SINCLAIR, FRANK; ROCKWELL, TYLER
To: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
Reel/Frame 019860/0766 →
Continuity (1)
Related Publication 20090078883A1 · Mar 26, 2009