Resin mold type semiconductor device
A semiconductor device includes: a semiconductor element; a metallic plate having a heat radiation surface; a terminal connecting to the element; and a resin mold covering the element, the plate and the terminal. The metallic plate provides an electrode of the semiconductor element. The heat radiation surface is capable of radiating heat generated in the element. The heat radiation surface and a part of the terminal are exposed from the resin mold. The resin mold includes a concavity/convexity portion between the heat radiation surface and the part of the terminal in order to lengthen a creepage distance therebetween. The concavity/convexity portion is disposed on a surface of the resin mold.
1. A semiconductor device comprising:
a semiconductor element;
a metallic plate having a heat radiation surface;
a terminal electrically connecting to the semiconductor element; and
a resin mold covering the semiconductor element, the metallic plate and the terminal, wherein
the metallic plate connects to the semiconductor element so that the metallic plate provides an electrode of the semiconductor element,
the heat radiation surface of the metallic plate is capable of radiating heat generated in the semiconductor element,
the heat radiation surface of the metallic plate and a part of the terminal are exposed from the resin mold to an outside of the semiconductor device,
the resin mold includes a concavity/convexity portion disposed between the heat radiation surface of the metallic plate and the part of the terminal in order to lengthen a creepage distance between the heat radiation surface and the part of the terminal, and
the concavity/convexity portion is disposed on a surface of the resin mold, the surface of the resin mold parallel to and spaced from the heat radiation surface of the metallic plate,
the concavity/convexity portion includes a protrusion, and where the protrusion is spaced away from a vertical edge of the resin mold and a surface of the resin mold that faces the protrusion,
the protrusion protrudes from the surface of the resin mold to a point between parallel planes containing the heat radiation surface of the metallic plate and the surface of the resin mold, the point being recessed away from the heat radiation surface of the metallic plate.
2. The device according to claim 1 , wherein
the metallic plate includes first and second plates, which face each other and sandwich the semiconductor element,
each of the first and second plates has the heat radiation surface and an inner surface,
the inner surface is opposite to the heat radiation surface,
the semiconductor element is sandwiched between the inner surfaces of the first and second plates,
the terminal is integrated with the first plate, and
the concavity/convexity portion is disposed between the part of the terminal and the heat radiation surface of the second plate.
3. The device according to claim 1 , wherein
the metallic plate includes first and second plates, which face each other and sandwich the semiconductor element,
each of the first and second plates has the heat radiation surface and an inner surface,
the inner surface is opposite to the heat radiation surface,
the semiconductor element is sandwiched between the inner surfaces of the first and second plates,
the part of the terminal is disposed between the heat radiation surfaces of the first and second plates,
the concavity/convexity portion includes first and second portions,
the first portion is disposed between the part of the terminal and the heat radiation surface of the first plate, and
the second portion is disposed between the part of the terminal and the heat radiation surface of the second plate.
4. The device according to claim 1 , wherein
the terminal is a conductor member, which is a different member from the metallic plate.
5. The device according to claim 1 , wherein
the metallic plate includes first and second plates, which face each other and sandwich the semiconductor element,
each of the first and second plates has the heat radiation surface and an inner surface,
the inner surface is opposite to the heat radiation surface,
the semiconductor element is sandwiched between the inner surfaces of the first and second plates, and
the concavity/convexity portion is disposed between the heat radiation surfaces of the first and second plates.
6. The device according to claim 1 , wherein
the concavity/convexity portion surrounds the heat radiation surface of the metallic plate.
7. The device according to claim 6 , wherein
the concavity/convexity portion has a ring shape so that the ring shape surrounds the heat radiation surface of the metallic plate.
8. The device according to claim 1 , wherein
the concavity/convexity portion further includes a concavity having a rectangular cross section, a triangle cross section, or a U-shaped cross section.
9. The device according to claim 1 , wherein
the concavity/convexity portion further includes a convexity having a rectangular cross section, a triangle cross section, or a U-shaped cross section.
10. The device according to claim 1 , wherein
the protrusion has at least one of a rectangular cross section, a triangle cross section or a U-shaped cross section.
11. The device according to claim 1 , wherein the point is a distal end of the concavity/convexity portion.