Phase-changeable memory devices including phase-changeable materials on silicon nitride layers
A phase-changeable memory device includes a substrate having a contact region on an upper surface thereof. An insulating interlayer on the substrate has an opening therein, and a lower electrode is formed in the opening. The lower electrode has a nitrided surface portion and is in electrical contact with the contact region of the substrate. A phase-changeable material layer pattern is on the lower electrode, and an upper electrode is on the phase-changeable material layer pattern. The insulating interlayer may have a nitrided surface portion and the phase-changeable material layer may be at least partially on the nitrided surface portion of the insulating interlayer. Methods of forming phase-changeable memory devices are also disclosed.
1. A phase-changeable memory device comprising:
a substrate having a contact region therein;
an insulating interlayer on the substrate;
a silicon nitride layer on an upper surface of the insulating interlayer opposite the substrate;
a lower electrode extending through the silicon nitride layer and the insulating interlayer and in electrical contact with the contact region of the substrate;
a phase-changeable material layer pattern on the lower electrode and extending across at least a portion of the silicon nitride layer that is between the phase-changeable material layer pattern and the insulating interlayer; and
an upper electrode on the phase-changeable material layer pattern;
wherein a surface portion of the silicon nitride layer has an increased nitrogen concentration relative to a lower portion of the silicon nitride layer.
2. The device of claim 1 , further comprising a seed layer pattern on the lower electrode and the silicon nitride layer beneath the phase-changeable material layer pattern.
3. The device of claim 2 , wherein the seed layer pattern comprises a material of a GeTe—Sb 2 Te 3 binary system.
4. The device of claim 2 , wherein the seed layer pattern includes a nitrogen dopant and/or an oxygen dopant.
5. The device of claim 2 , wherein the seed layer pattern includes a transition metal dopant.
6. The device of claim 2 , wherein the seed layer pattern comprises GeN and/or InN.
7. The device of claim 1 , wherein the silicon nitride layer is directly on the upper surface of the insulating interlayer opposite the substrate.
8. The device of claim 1 , further comprising a seed layer pattern between the lower electrode and the phase-changeable material layer pattern, wherein the seed layer pattern extends across the at least a portion of the silicon nitride layer that is between the phase-changeable material layer pattern and the insulating interlayer and is in direct contact with the silicon nitride layer.
9. A phase-changeable memory device comprising:
a substrate having a contact region therein;
an insulating interlayer on the substrate;
a silicon nitride layer on an upper surface of the insulating interlayer opposite the substrate;
a lower electrode extending through the silicon nitride layer and the insulating interlayer and in electrical contact with the contact region of the substrate;
a phase-changeable material layer pattern on the lower electrode and extending across at least a portion of the silicon nitride layer that is between the phase-changeable material layer pattern and the insulating interlayer;
an upper electrode on the phase-changeable material layer pattern; and
a seed layer pattern on the lower electrode and the silicon nitride layer beneath the phase-changeable material layer pattern;
wherein the seed layer pattern comprises an InGeSbTe compound and/or a GeSnSbTe compound.
10. A phase-changeable memory device comprising:
a substrate having a contact region therein;
an insulating interlayer on the substrate;
a silicon nitride layer on an upper surface of the insulating interlayer opposite the substrate;
a lower electrode extending through the silicon nitride layer and the insulating interlayer and in electrical contact with the contact region of the substrate;
a phase-changeable material layer pattern on the lower electrode and extending across at least a portion of the silicon nitride layer that is between the phase-changeable material layer pattern and the insulating interlayer; and
an upper electrode on the phase-changeable material layer pattern;
wherein a surface portion of the lower electrode has an increased nitrogen concentration relative to a lower portion of the lower electrode.