Semiconductor device and method of manufacturing the same
View Patent ↗An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Stripe shape or rectangular shape unevenness or opening is formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave oscillation laser light may also be used.
1. A method of manufacturing a semiconductor device, comprising:
forming an insulating film on a substrate having an insulating surface, the insulating film having at least one opening;
forming an amorphous semiconductor film on the insulating film and the opening;
crystallizing the amorphous semiconductor film to form a crystalline semiconductor film by melting the amorphous semiconductor film;
forming a crystalline semiconductor island by removing at least a portion of the crystalline semiconductor film remaining on the insulating film;
exposing side surfaces of at least a portion of the crystalline semiconductor island by removing a part of the insulating film; and
forming a gate insulating film in contact with top and side surfaces of at least the portion of the crystalline semiconductor island;
forming a gate electrode on the gate insulating film; and
forming a source region and a drain region in the crystalline semiconductor island,
wherein a channel formation region is between the source region and the drain region, and
wherein the portion of the crystalline semiconductor island includes the channel formation region.
2. A method of manufacturing a semiconductor device, comprising:
forming an insulating film on a substrate having an insulating surface, the insulating film having at least one opening;
forming an amorphous semiconductor film on the insulating film and the opening;
crystallizing the amorphous semiconductor film to form a crystalline semiconductor film by melting the amorphous semiconductor film by irradiating laser light;
forming a crystalline semiconductor island by removing at least a portion of the crystalline semiconductor film remaining on the insulating film;
exposing side surfaces of at least a portion of the crystalline semiconductor island by removing a part of the insulating film; and
forming a gate insulating film in contact with top and side surfaces of at least the portion of the crystalline semiconductor island; and
forming a gate electrode on the gate insulating film; and
forming a source region and a drain region in the crystalline semiconductor island,
wherein a channel formation region is between the source region and the drain region, and
wherein the portion of the crystalline semiconductor island includes the channel formation region.
3. A method of manufacturing a semiconductor device according to claim 2 , wherein the laser light is irradiated by using a continuous wave laser oscillation apparatus as a light source.
4. A method of manufacturing a semiconductor device according to claim 2 , wherein the laser light is irradiated while the substrate is heated.
5. A method of manufacturing a semiconductor device, comprising:
forming an insulating film on a substrate having an insulating surface, the insulating film having at least one opening;
forming an amorphous semiconductor film on the insulating film and the opening;
crystallizing the amorphous semiconductor film to form a crystalline semiconductor film by scanning a laser light over the amorphous semiconductor film;
forming a crystalline semiconductor island by removing at least a portion of the crystalline semiconductor film remaining on the insulating film;
exposing side surfaces of at least a portion of the crystalline semiconductor island by removing a portion of the insulating film; and
forming a gate insulating film in contact with top and side surfaces of at least the portion of the crystalline semiconductor island; and
forming a gate electrode on the gate insulating film; and
forming a source region and a drain region in the crystalline semiconductor island,
wherein a channel formation region is between the source region and the drain region, and
wherein the portion of the crystalline semiconductor island includes the channel formation region,
wherein the amorphous semiconductor film is melted by scanning the laser light,
wherein the crystallizing step is performed by scanning the laser light in a direction parallel to a channel longitudinal direction, and
wherein the opening is extended in the channel longitudinal direction.
6. A method of manufacturing a semiconductor device according to claim 5 , wherein the laser light is scanned by using a continuous wave laser oscillation apparatus as a light source.
7. A method of manufacturing a semiconductor device according to claim 5 , wherein the laser light is scanned while the substrate is heated.
8. A method of manufacturing a semiconductor device, comprising:
forming an insulating film on a substrate having an insulating surface, the insulating film having at least one opening;
forming a non-single crystalline semiconductor film on the insulating film and the opening;
forming a crystalline semiconductor film filling the opening of the insulating film by melting and crystallizing the non-single crystalline semiconductor film;
forming a crystalline semiconductor island by removing at least a portion of the crystalline semiconductor film remaining on the insulating film;
exposing side surfaces of a portion of the crystalline semiconductor island by removing the insulating film at least from an area for forming a channel formation region; and
forming a gate insulating film and a gate electrode on the gate insulating film so that the crystalline semiconductor island is overlapped with the gate electrode through the gate insulating film.
9. A method of manufacturing a semiconductor device, comprising:
forming an insulating film on a substrate having an insulating surface, the insulating film having at least a first opening and a second opening;
forming a non-single crystalline semiconductor film on the insulating film, the first opening, and the second opening;
melting and crystallizing the non-single crystalline semiconductor film by irradiating a laser light in order to form a crystalline semiconductor film filling the first opening and the second opening of the insulating film;
forming a crystalline semiconductor island by removing at least a portion of the crystalline semiconductor film remaining on the insulating film;
exposing side surfaces of a portion of the crystalline semiconductor island by removing at least a portion of the insulating film provided between the first opening and the second opening; and
forming a gate insulating film and a gate electrode on the gate insulating film so that the crystalline semiconductor island is overlapped with the gate electrode through the gate insulating film.
10. A method of manufacturing a semiconductor device according to claim 9 , wherein the laser light is irradiated by using a continuous wave laser oscillation apparatus as a light source.
11. A method of manufacturing a semiconductor device according to claim 9 , wherein the laser light is irradiated along a longitudinal direction of the opening.
12. A method of manufacturing a semiconductor device, comprising:
forming an insulating film on a substrate having an insulating surface, the insulating film having at least one opening;
forming a non-single crystalline semiconductor film on the insulating film and the opening;
forming a crystalline semiconductor film filling the opening of the insulating film by melting and crystallizing the non-single crystalline semiconductor film;
forming a crystalline semiconductor island from the crystalline semiconductor film;
exposing side surfaces of a portion of the crystalline semiconductor island by removing the insulating film at least from an area for forming a channel formation region; and
forming a gate insulating film and a gate electrode on the gate insulating film so that the crystalline semiconductor island is overlapped with the gate electrode through the gate insulating film.
13. A method of manufacturing a semiconductor device, comprising:
forming an insulating film on a substrate having an insulating surface, the insulating film having at least one opening;
forming a non-single crystalline semiconductor film on the insulating film and the opening;
melting and crystallizing the non-single crystalline semiconductor film by irradiating a laser light in order to form a crystalline semiconductor film filling the opening of the insulating film; and
forming a crystalline semiconductor island from the crystalline semiconductor film;
exposing side surfaces of a portion of the crystalline semiconductor island by removing the insulating film at least from an area for forming the channel formation region; and
forming a gate insulating film and a gate electrode on the gate insulating film so that the crystalline semiconductor island is overlapped with the gate electrode through the gate insulating film.
14. A method of manufacturing a semiconductor device according to claim 13 , wherein the laser light is irradiated by using a continuous wave laser oscillation apparatus as a light source.
15. A method of manufacturing a semiconductor device according to claim 13 , wherein the laser light is irradiated along a longitudinal direction of the opening.
16. A method of manufacturing a semiconductor device, comprising:
forming a semiconductor film on an insulating film having a plurality of convex portions so that the semiconductor film covers the plurality of convex portions wherein the plurality of convex portions includes a first convex portion, a second convex portion, and a third convex portion;
irradiating the semiconductor film with a laser light in order to increase the crystallinity of the semiconductor film;
forming a semiconductor island by patterning the semiconductor film having increased crystallinity wherein the semiconductor island includes a first portion and a second portion, the first portion of the semiconductor island is between and contacts the first convex portion and the second convex portion, and the second portion of the semiconductor island is between and contacts the second convex portion and the third convex portion;
exposing upper surfaces of the plurality of convex portions by etching an upper surface of the semiconductor island;
exposing side surfaces of at least a part of the first portion and a part of the second portion of the etched semiconductor island by removing at least a part of the first convex portion, a part of the second convex portion and a part of the third convex portion; and
forming a gate insulating film in contact with top and side surfaces of at least the part of the first portion and the part of the second portion of the etched semiconductor island;
forming a gate electrode on the gate insulating film; and
forming a source region and a drain region in the etched semiconductor island,
wherein a first channel formation region and a second channel formation region are between the source region and the drain region,
wherein the part of the first portion of the etched semiconductor island includes the first channel formation region, and
wherein the part of the second portion of the etched semiconductor island includes the second channel formation region.
17. A method of manufacturing a semiconductor device according to claim 9 , wherein the laser light is output by using one or a plurality of laser types selected from the group consisting of YAG lasers, YVO 4 lasers, YLF lasers, YAlO 3 lasers, glass lasers, ruby lasers, Alexandrite lasers, Ti:sapphire lasers, Y 2 O 3 lasers, and Nd:YVO 4 lasers.
18. A method of manufacturing a semiconductor device according to claim 9 , wherein the laser light is output by using a slab laser.
19. A method of manufacturing a semiconductor device according to claim 9 , wherein the laser light is a continuous wave.
20. A method of manufacturing a semiconductor device according to claim 9 , wherein the laser light is a second harmonic.
21. A method of manufacturing a semiconductor device, comprising:
forming a semiconductor film on an insulating film having a plurality of convex portions so that the semiconductor film covers the plurality of convex portions wherein the plurality of convex portions includes a first convex portion, a second convex portion, and a third convex portion;
irradiating laser light to the semiconductor film in order to increase the crystallinity of the semiconductor film;
exposing upper surfaces of the plurality of convex portions by etching an upper surface of the semiconductor film having increased crystallinity;
forming a semiconductor island by patterning the etched semiconductor film wherein the semiconductor island includes a first portion and a second portion, the first portion of the semiconductor island is between and contacts the first convex portion and the second convex portion, and the second portion of the semiconductor island is between and contacts the second convex portion and the third convex portion;
exposing side surfaces of at least a part of the first portion and a part of the second portion of the semiconductor island by removing at least a part of the first convex portion, a part of the second convex portion and a part of the third convex portion,
forming a gate insulating film in contact with top and side surfaces of at least the part of the first portion and the part of the second portion of the semiconductor island;
forming a gate electrode on the gate insulating film; and
forming a source region and a drain region in the semiconductor island,
wherein a first channel formation region and a second channel formation region are between the source region and the drain region,
wherein the part of the first portion of the semiconductor island includes the channel formation region, and
wherein the part of the second portion of the semiconductor island includes the second channel formation region.
22. A method of manufacturing a semiconductor device according to claim 21 , wherein the laser light is output by using one or a plurality of laser types selected from the group consisting of YAG lasers, YVO 4 lasers, YLF lasers, YAlO 3 lasers, glass lasers, ruby lasers, Alexandrite lasers, Ti:sapphire lasers, Y 2 O 3 lasers, and Nd:YVO 4 lasers.
23. A method of manufacturing a semiconductor device according to claim 21 , wherein the laser light is output by using a slab laser.
24. A method of manufacturing a semiconductor device according to claim 21 , wherein the laser light is a continuous wave.
25. A method of manufacturing a semiconductor device according to claim 21 , wherein the laser light is a second harmonic.
26. A method of manufacturing a semiconductor device, comprising:
forming a semiconductor film on an insulating film having a plurality of convex portions so that the semiconductor film covers the plurality of convex; portions wherein the plurality of convex portions includes a first convex portion, a second convex portion, and a third convex portion;
forming a semiconductor island by patterning the semiconductor film wherein the semiconductor island includes a first portion and a second portion, the first portion of the semiconductor island is between and contacts the first convex portion and the second convex portion, and the second portion of the semiconductor island is between and contacts the second convex portion and the third convex portion;
irradiating the semiconductor island with a laser light in order to increase the crystallinity of the semiconductor island;
exposing upper surfaces of the plurality of convex portions by etching an upper surface of the semiconductor island having increased crystallinity;
exposing side surfaces of at least a part of the first portion and a part of the second portion of the semiconductor island by removing at least a part of the first convex portion, a part of the second convex portion and a part of the third convex portion,
forming a gate insulating film in contact with top and side surfaces of at least the part of the first portion and the part of the second portion of the etched semiconductor island:
forming a gate electrode on the gate insulating film; and
forming a source region and a drain region in the etched semiconductor island,
wherein a first channel formation region and a second channel formation region are between the source region and the drain region,
wherein the part of the first portion of the etched semiconductor island includes the channel formation region, and
wherein the part of the second portion of the etched semiconductor island includes the second channel formation region.
27. A method of manufacturing a semiconductor device according to claim 10 , wherein the laser light is output by using one or a plurality of laser types selected from the group consisting of YAG lasers, YVO 4 lasers, YLF lasers, YAlO 3 lasers, glass lasers, ruby lasers, Alexandrite lasers, Ti:sapphire lasers, Y 2 O 3 lasers, and Nd:YVO 4 lasers.
28. A method of manufacturing a semiconductor device according to claim 10 , wherein the laser light is output by using a slab laser.
29. A method of manufacturing a semiconductor device according to claim 10 , wherein the laser light is a continuous wave.
30. A method of manufacturing a semiconductor device according to claim 10 , wherein the laser light is a second harmonic.