Nitride semiconductor device
A nitride semiconductor device according to the present invention includes: a nitride semiconductor laminated structure comprising a first layer made of a Group III nitride semiconductor, a second layer laminated on the first layer and made of an Al-containing Group III nitride semiconductor with a composition that differs from that of the first layer, the nitride semiconductor laminated structure comprising a stripe-like trench exposing a lamination boundary between the first layer and the second layer; a gate electrode formed to oppose the lamination boundary; and a source electrode and a drain electrode, having the gate electrode interposed therebetween, each connected electrically to the second layer.
1. A nitride semiconductor device comprising:
a nitride semiconductor laminated structure comprising a first layer made of a Group III nitride semiconductor, a second layer laminated on the first layer and made of an Al-containing Group III nitride semiconductor with a composition that differs from that of the first layer, the nitride semiconductor laminated structure comprising a stripe-like trench exposing a lamination boundary between the first layer and the second layer;
a gate electrode formed to oppose the lamination boundary; and
a source electrode and a drain electrode, having the gate electrode interposed therebetween, each connected electrically to the second layer.
2. The nitride semiconductor device according to claim 1 , wherein
a plurality of the trenches are formed in the nitride semiconductor laminated structure and an interval between mutually adjacent trenches is 50 nm or less.
3. The nitride semiconductor device according to claim 1 , wherein
an insulating film is interposed between the gate electrode and the nitride semiconductor laminated structure.
4. The nitride semiconductor device according to claim 3 , wherein
the insulating film is an SiN film.
5. The nitride semiconductor device according to claim 1 , wherein
a width of the trench in the stripe direction is narrower than a width of the gate electrode in the stripe direction.
6. A nitride semiconductor device comprising:
a line like portion comprising a first layer made of a Group III nitride semiconductor, a second layer laminated on the first layer and made of an Al-containing Group III nitride semiconductor with a composition that differs from that of the first layer;
a source electrode connection portion provided at one end of the line like portion;
a drain electrode connection portion provided at the other end of the line like portion;
a gate electrode provided for covering a part of the line like portion including at least a lamination boundary between the first layer and the second layer.
7. The nitride semiconductor device according to claim 6 , wherein
a width being orthogonal to a longitudinal direction of the line like portion is 50 nm or less.
8. The nitride semiconductor device according to claim 6 , wherein
an insulating film is interposed between the gate electrode and the line like portion.
9. The nitride semiconductor device according to claim 6 , wherein
the line like portion includes a plurality of line like portions in stripes,
the source electrode connection portion is a source-side merging portion spanning across the plurality of line-like portions along a width direction orthogonal to a longitudinal direction of the line like portions at one ends of the line like portions,
the drain electrode connection portion is a drain-side merging portion spanning across the line like portions along the width direction at other ends of the line like portions.