Method for forming a coating with a liquid, and method for manufacturing a semiconductor device
A method of forming a liquid coating on a substrate that reduces the amount of consumption of the coating liquid and achieves a more even distribution of the thickness of the liquid coating film. The method may include supplying a solvent to a surface of a substrate, starting a supply of a coating liquid to the surface of the substrate while rotating the substrate at a first rotation speed, stopping a rotation of the substrate by decelerating the rotation of the substrate at a deceleration larger than 30000 rpm/sec at a point of time when the supply of the coating liquid is stopped, and then rotating the substrate at a second rotation speed. Accordingly, the dispense amount of the coating liquid is reduced and the film thickness of the coating liquid is flatten.
1. A method of manufacturing a semiconductor device, the method comprising:
supplying a solvent to a surface of a substrate;
starting a supply of a coating liquid to the surface of the substrate while rotating the substrate at a first rotation speed, the substrate rotating at the first rotation speed for a first time period;
stopping the rotation of the substrate while keeping deceleration larger than 30000 rpm/second; and
after the substrate is stopped, rotating the substrate at a second rotation speed for a second time period.
2. The method of claim 1 , further comprising:
stopping the rotation of the substrate after stopping the supplying of the coating liquid to the substrate.
3. The method of claim 1 , further comprising:
changing the first rotation speed after the supply of the coating liquid to the substrate has started but before stopping the rotation of the substrate.
4. The method of claim 3 , wherein the first rotation speed has a beginning speed and an ending speed, the ending speed being faster than the beginning speed.
5. The method of claim 1 , wherein the deceleration is at least 40000 rpm/second.
6. The method of claim 5 , wherein the second rotation speed is lower than the first rotation speed.
7. The method of claim 5 , wherein in the stopping of the substrate, the substrate is stopped longer than 0.5 seconds but shorter than 3.0 seconds.
8. The method of claim 1 , further comprising:
after supplying the solvent to the substrate and before rotating the substrate at the first rotation speed, spinning the substrate at a third rotation speed.
9. The method of claim 8 , wherein the third rotation speed is lower than the first rotation speed.
10. The method of claim 9 , wherein the second rotation speed is lower than the first rotation speed.
11. The method of claim 9 , wherein in the stopping of the substrate, the substrate is stopped longer than 0.5 seconds but shorter than 3.0 seconds.
12. The method of claim 8 , wherein the third rotation speed is in the range of 100 to 2500 rpm.
13. The method of claim 12 , wherein the deceleration is at least 40000 rpm/second.
14. The method of claim 1 , wherein the second rotation speed is lower than the first rotation speed.
15. The method of claim 1 , wherein the second rotation speed is larger than the first rotation speed.
16. The method of claim 1 , wherein in the stopping of the substrate, the substrate is stopped longer than 0.5 seconds but shorter than 3.0 seconds.
17. The method of claim 1 , wherein the viscosity of the coating liquid is 25 mPa-seconds or less.
18. The method of claim 1 , wherein the first rotation speed is in the range of 1000 to 3000 rpm.
19. The method of claim 18 , wherein the second rotation speed is in the range of 1500 to 3000 rpm.
20. The method of claim 19 , wherein the deceleration is at least 40000 rpm/second.
21. The method of claim 18 , wherein the deceleration is at least 40000 rpm/second.
22. The method of claim 1 , wherein the second rotation speed is in the range of 1500 to 3000 rpm.
23. The method of claim 22 , wherein the deceleration is at least 40000 rpm/second.
24. The method of claim 1 , wherein after the substrate is stopped, the substrate is accelerated to the second rotation speed by an acceleration of at least 5000 rpm/second.
25. The method of claim 1 , further comprising:
dispensing the coating liquid onto the substrate before the substrate is rotating at the first rotation speed.
26. The method of claim 1 , wherein the deceleration is larger than 30000 rpm/second during a deceleration time period.
27. The method of claim 1 , wherein the deceleration is maintained constant during a deceleration period.
28. The method of claim 1 , wherein the rotation of the substrate is decreased to 0 rpm from the first rotation speed by keeping the deceleration at larger than 30000 rpm/second.
29. A method of forming a coating, the method comprising:
supplying a solvent to a surface of a substrate;
starting a supply of a coating liquid to the surface of the substrate while rotating the substrate at a first rotation speed, the substrate rotating at the first rotation speed for a first time period;
stopping the rotation of the substrate while keeping deceleration larger than 30000 rpm/second; and
after the substrate is stopped, rotating the substrate at a second rotation speed for a second time period.
30. The method of claim 29 , further comprising:
stopping the rotation of the substrate after stopping the supplying of the coating liquid to the substrate.
31. The method of claim 29 , wherein the deceleration is at least 40000 rpm/second.
32. The method of claim 29 , further comprising:
after supplying the solvent to the substrate and before rotating the substrate at the first rotation speed, spinning the substrate at a third rotation speed.
33. The method of claim 32 , wherein the third rotation speed is lower than the first rotation speed.
34. The method of claim 29 , wherein the second rotation speed is lower than the first rotation speed.
35. The method of claim 29 , wherein in the stopping of the substrate, the substrate is stopped more than 0.5 seconds but less than 3.0 seconds.
36. The method of claim 29 , wherein the deceleration is larger than 30000 rpm/second during a deceleration time period.
37. The method of claim 29 , wherein the deceleration is maintained constant during a deceleration time period.
38. The method of claim 29 , wherein the rotation of the substrate is determined to be 0 rpm from the first rotation speed by keeping the deceleration at larger than 30000 rpm/second.
39. A method of forming a coating, the method comprising:
dispensing a solvent to a surface of a substrate;
starting a supply of a coating liquid to the surface of the substrate while rotating the substrate at a first rotation speed, the substrate rotating at the first rotation speed for a first predetermined time;
rotating the substrate at a second rotation speed for a second predetermined time, the second rotation speed being larger than the first rotation speed;
dispensing the coating liquid on the substrate during the second rotation speed;
rotating the substrate at a third rotation speed for a third predetermined time, the third rotation speed being larger than the second rotation speed;
ending the dispensing of the coating liquid onto the substrate before the substrate spins at the third rotation speed;
stopping the rotation of the substrate at a deceleration larger than 30000 rpm/sec; and
after the substrate is stopped, rotating the semiconductor substrate at a fourth rotation speed for a fourth predetermined time.