Semiconductor module
A semiconductor module. One embodiment provides at least two semiconductor chips placed on a carrier. The at least two semiconductor chips are then covered with a molding material to form a molded body. The molded body is thinned until the at least two semiconductor chips are exposed. Then, the carrier is removed from the at least two semiconductor chips. The at least two semiconductor chips are singulated.
1. A method of manufacturing a semiconductor device, comprising:
placing at least two semiconductor chips on a carrier;
covering the at least two semiconductor chips with a molding material to form a molded body;
thinning the molded body until the at least two semiconductor chips are exposed;
removing the carrier from the at least two semiconductor chips; and
singulating the at least two semiconductor chips after removal of the carrier.
2. The method of claim 1 , further comprising:
thinning the at least two semiconductor chips during the thinning of the molded body.
3. The method of claim 2 , comprising thinning the at least two semiconductor chips to a thickness of less than 200 μm.
4. The method of claim 1 , comprising wherein thinning is made by grinding or lapping.
5. The method of claim 1 , comprising wherein before thinning, a main surface of the molded body embedding the at least two semiconductor chips has a bow of at least 1 mm difference in surface level height, and wherein the bow is substantially removed by the thing.
6. The method of claim 1 , further comprising:
selectively removing a portion of the molding material from the carrier to selectively expose a portion of the carrier.
7. The method of claim 6 , wherein selectively removing a portion of the molding material is performed by at least one of mechanical drilling, laser drilling and etching.
8. The method of claim 6 , further comprising:
covering the selectively exposed portion of the carrier with a conductive element.
9. A method comprising:
placing at least two semiconductor chips on a carrier;
covering the at least two semiconductor chips with a molding material to form a molded body;
thinning the molded body until the at least two semiconductor chips are exposed;
applying a first layer of conductive material over the at least two semiconductor chips after thinning the molded body, wherein the first layer of conductive material electrically connects to a contact pad on the at least two semiconductor chips;
removing the carrier from the at least two semiconductor chips; and
singulating the at least two semiconductor chips after removal of the carrier.
10. The method of claim 9 , comprising applying the conductive material of the first layer by a deposition process.
11. The method of claim 9 , comprising applying the conductive material of the first layer by attaching a metal sheet to the contact pad.
12. A method comprising:
placing at least two semiconductor chips on a carrier;
covering the at least two semiconductor chips with a molding material to form a molded body;
thinning the molded body until the at least two semiconductor chips are exposed;
applying a first layer of conductive material over the at least two semiconductor chips after thinning the molded body, wherein the first layer of conductive material electrically connects to a contact pad on the at least two semiconductor chips;
removing the carrier from the at least two semiconductor chips;
depositing a second layer of conductive material over a main surface of the at least two semiconductor chips which has been released from the carrier; and
singulating the at least two semiconductor chips.
13. The method of claim 12 , further comprising:
structuring the second layer of conductive material to form external terminals of the module.
14. A method of manufacturing a semiconductor device, comprising:
placing at least two semiconductor chips, each having a first main surface and a second main surface, on a carrier, wherein the second main surfaces are placed on the carrier;
covering the at least two semiconductor chips with a molding material to form a molded body;
thinning the molded body until semiconductor material of the first main surfaces of the at least two semiconductor chips is exposed;
removing the carrier from the at least two semiconductor chips; and
singulating the at least two semiconductor chips.
15. The method of claim 14 , further including generating contact pads on the first main surfaces of the at least two semiconductor chips after the thinning.
16. The method of claim 15 , further including:
providing channels extending through the molded body; and
forming an electrically conductive layer filling the channels interconnecting the contact pads on the first main surfaces to a contact terminal lying substantially in a same plane as contact pads on the second main surfaces of the at least two semiconductor chips.
17. A method of manufacturing a semiconductor device, comprising:
placing at least two semiconductor chips on a carrier;
covering the at least two semiconductor chips with a molding material to form a molded body;
thinning the molded body until the at least two semiconductor chips are exposed, wherein a thickness of the at least two semiconductor chips is reduced to a thickness which is less than a thickness of the at least two semiconductor chips before thinning;
removing the carrier from the at least two semiconductor chips; and
singulating the at least two semiconductor chips.