Metal wiring and method for forming the same
View Patent ↗A metal wiring and method for forming the same are provided. A first conductive layer is formed on a semiconductor substrate, and an insulating layer is formed on the first conductive layer. A via and a trench are formed in the insulating layer, and a second conductive layer is formed by burying metal in the via and the trench. The insulating layer also includes materials with a low dielectric constant filled in second vias.
1. A method for forming a metal wiring, comprising:
forming a first conductive layer on a semiconductor substrate;
forming an insulating layer on the first conductive layer;
forming a first via and a trench in the second insulating layer;
forming a second conductive layer in the first via and the trench; and
forming a plurality of second vias in the insulating layer adjacent to the first via and the trench; and
filling each of the second vias with an oxidation material having a low-K dielectric,
wherein the oxidation material having a low-K dielectric comprises a carbon-doped silicon dioxide.
2. The method according to claim 1 , wherein the insulating layer comprises fluorosilicate glass.
3. The method according to claim 1 , wherein the dielectric constant of the insulating layer is from about 3.4 to about 3.8, and wherein the dielectric constant of the oxidation material having a low-K dielectric is from about 2.6 to about 3.1.
4. The method according to claim 1 , wherein filling each of the second vias with the oxidation material having the low-K dielectric comprises performing a spin coating method.
5. The method according to claim 1 , wherein filling each of the second vias with the oxidation material having the low-K dielectric comprises performing a high density plasma deposition method.
6. The method according to claim 1 , wherein forming the second conductive layer in the first via and the trench comprises performing an electro-chemical plating (ECP) process.
7. The method according to claim 1 , wherein the metal comprises copper.
8. A method for forming a metal wiring, comprising:
forming a first conductive layer on a semiconductor substrate;
forming an insulating layer on the first conductive layer;
forming a first via and a trench in the second insulating layer;
forming a second conductive layer in the first via and the trench; and
forming a plurality of second vias in the insulating layer adjacent to the first via and the trench; and
filling each of the second vias with an oxidation material having a low-K dielectric.
wherein the insulating layer comprises a carbon-doped silicon dioxide.
wherein the oxidation material having a low-K dielectric comprises fluorosilicate glass.
9. The method according to claim 8 , wherein the dielectric constant of the insulating layer is from about 2.6 to about 3.1, and wherein the dielectric constant of the oxidation material having a low-K dielectric is from about 3.4 to about 3.8.
10. The method according to claim 8 , wherein filling each of the second vias with the oxidation material having a low-K dielectric comprises performing a high density plasma deposition method.