Method and apparatus for bitline and contact via integration in magnetic random access memory arrays

1. A magnetic random access memory, comprising:

a magnetic tunnel junction; and

a top wire that surrounds the magnetic tunnel junction on at least three sides of the magnetic tunnel junction, wherein the top wire is lined by a ferromagnetic liner.

2. The magnetic random access memory of claim 1 , wherein the top wire is a bitline.

3. The magnetic random access memory of claim 1 , wherein the top wire is a wordline.

4. The magnetic random access memory of claim 1 , wherein the top wire further surrounds a via that couples the top wire to the magnetic tunnel junction.

5. The magnetic random access memory of claim 1 , wherein said ferromagnetic liner comprises at least: a top wall; a first sidewall coupled to the top wall; and a second sidewall coupled to the top wall and disposed opposite the first sidewall.

6. The magnetic random access memory of claim 1 , further comprising:

peripheral logic wiring electrically connected to the top wire.

7. The magnetic random access memory of claim 6 , wherein the top wire is sunk more deeply than the peripheral logic wiring is sunk.

8. A method for forming a magnetic random access memory, comprising: providing a magnetic tunnel junction; surrounding the magnetic tunnel junction on at least three sides with a top wire; and lining the top wire with a ferromagnetic liner.

9. The method of claim 8 , wherein the top wire is a bitline.

10. The method of claim 8 , wherein the top wire is a wordline.

11. The method of claim 8 , further comprising:

providing a dielectric under layer between the magnetic tunnel junction and the top wire.

12. The method of claim 11 , wherein the top wire is formed by:

applying an inter-level dielectric over the dielectric under layer; and

defining a trench for the top wire in the inter-level dielectric.

13. The method of claim 12 , further comprising:

etching a damascene trench into the inter-level dielectric for peripheral wiring.

14. The method of claim 13 , wherein the damascene trench is etched using tri-layer lithography.

15. The method of claim 13 , further comprising:

defining a first via through the inter-level dielectric to connect the peripheral wiring to a peripheral wiring interconnect.

16. The method of claim 15 , further comprising:

defining a second via to connect the top wire to the magnetic tunnel junction substantially simultaneously with the defining of the first via, in accordance with a single tri-layer lithography step.

17. The method of claim 15 , wherein the defining comprises:

defining the first via in accordance with a first tri-layer lithography step; and

defining a second via to connect the top wire to the magnetic tunnel junction, in accordance with a second tri-layer lithography step.

18. The method of claim 11 , further comprising:

defining a via through the dielectric under layer to connect the top wire to the magnetic tunnel junction.

19. The method of claim 18 , wherein the via is defined using tri-layer lithography.