Semiconductor laser device
An object of the invention is to achieve a high output gain waveguide semiconductor laser device exhibiting high reliability by suppressing growth of <100>DLD. A semiconductor laser device includes a semiconductor laser structure of a gain waveguide formed on a semiconductor substrate in which two grooves extending in an oscillation direction thereof are formed, wherein a current injection stripe is arranged between the two grooves. Preferably, a quantum well constituting an active layer of the semiconductor laser device is composed of GaAs.
1. A semiconductor laser device, comprising:
a semiconductor substrate in which two grooves extending in an oscillation direction thereof are formed; and
a semiconductor laser structure of a gain waveguide formed on the semiconductor substrate, having a current injection region,
wherein the current injection region being located between the two grooves, and
the semiconductor laser structure has a constitution where a waveguide layer bends in the thickness direction of the semiconductor laser device corresponding to the shape of the grooves between device ends in the transverse direction perpendicular to the oscillation direction and the current injection stripe.
2. The semiconductor laser device of claim 1 , wherein an active layer of the semiconductor laser device is composed of a GaAs quantum well.
3. The semiconductor laser device of claim 1 , wherein the semiconductor laser structure includes,
a n-type cladding layer,
a n-type optical waveguide layer,
an active layer including an n-type carrier blocking layer a quantum well and a p-type carrier blocking layer,
a p-type optical waveguide layer,
a p-type cladding layer,
a n-type current confinement layer, and
a p-type contact layer.
4. The semiconductor laser device of claim 1 , wherein the semiconductor laser structure includes,
a n-type cladding layer,
a n-type optical waveguide layer,
an active layer including a quantum well,
a p-type optical waveguide layer,
a p-type cladding layer,
a n-type current confinement layer, and
a p-type contact layer.
5. The semiconductor laser device of claim 1 , wherein the two grooves are 20 μm wide and 1 μm deep.
6. The semiconductor laser device of claim 1 , wherein a depth of the two grooves is equal to a waveguide mode width of the current injection region.
7. The semiconductor laser device of claim 1 , wherein a depth of the two grooves is greater than a waveguide mode width of the current injection stripe.
8. The semiconductor laser device of claim 1 , wherein the current injection region 100 μm wide.
9. The semiconductor laser device of claim 1 , wherein the current injection region is centered at a midpoint between the two grooves.
10. A semiconductor device, comprising:
a semiconductor substrate in which two grooves extending in an oscillation direction thereof are formed;
a n-type cladding layer formed on the semiconductor substrate;
a n-type optical waveguide layer formed on the n-type cladding layer;
an active layer, formed on the n-type optical waveguide layer, including an n-type carrier blocking layer a quantum well and a p-type carrier blocking layer;
a p-type optical waveguide layer formed on the active layer;
a p-type cladding layer formed on the p-type optical waveguide layer;
a n-type current confinement layer formed on the p-type cladding layer;
and
a p-type contact layer formed on the n-type current confinement layer,
wherein
the two grooves extend from the semiconductor substrate to the p-type contact layer,
a current injection region is formed in the n-type current confinement layer and the p-type contact layer, the current injection region being located between the two grooves, and
the waveguide layer bends in the thickness direction of the semiconductor device corresponding to the shape of the grooves between device ends in the transverse direction perpendicular to the oscillation direction and the current injection stripe.
11. The semiconductor device of claim 10 , wherein the active layer of the semiconductor device is composed of a GaAs quantum well.
12. The semiconductor device of claim 10 , wherein the two grooves are 20 μm wide and 1 μm deep.
13. The semiconductor device of claim 10 , wherein a depth of the two grooves is equal to a waveguide mode width of the current injection region.
14. The semiconductor device of claim 10 , wherein a depth of the two grooves is greater than a waveguide mode width of the current injection stripe.
15. The semiconductor device of claim 10 , wherein the current injection region 100 μm wide.
16. The semiconductor device of claim 10 , wherein the current injection region is centered at a midpoint between the two grooves.
17. A semiconductor device, comprising:
a semiconductor substrate in which two grooves extending in an oscillation direction thereof are formed;
a n-type cladding layer formed on the semiconductor substrate;
a n-type optical waveguide layer formed on the n-type cladding layer;
an active layer formed on the n-type optical waveguide layer;
a p-type optical waveguide layer formed on the active layer;
a p-type cladding layer formed on the p-type optical waveguide layer;
a n-type current confinement layer formed on the p-type cladding layer;
and
a p-type contact layer formed on the n-type current confinement layer,
wherein
the two grooves extend from the semiconductor substrate to the p-type contact layer,
a current injection region is formed in the n-type current confinement layer and the p-type contact layer, the current injection region being located between the two grooves, and
the waveguide layer bends in the thickness direction of the semiconductor device corresponding to the shape of the grooves between device ends in the transverse direction perpendicular to the oscillation direction and the current injection stripe.
18. The semiconductor device of claim 17 , wherein the active layer of the semiconductor device is composed of a GaAs quantum well.
19. The semiconductor device of claim 17 , wherein a depth of the two grooves is equal to a waveguide mode width of the current injection region.
20. The semiconductor device of claim 17 , wherein the current injection region is centered at a midpoint between the two grooves.