Vortex chamber lids for atomic layer deposition
Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel extending along a central axis at a central portion of the chamber lid assembly and a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly. The tapered bottom surface may be shaped and sized to substantially cover the substrate receiving surface. The chamber lid assembly further contains a conduit coupled to a gas passageway, another conduit coupled to another gas passageway, and both gas passageways circumvent the expanding channel. Each of the passageways has a plurality of inlets extending into the expanding channel and the inlets are positioned to provide a circular gas flow through the expanding channel.
1. A chamber for processing substrates, comprising:
a substrate support comprising a substrate receiving surface; and
a chamber lid assembly comprising:
an expanding channel extending along a central axis at a central portion of the chamber lid assembly;
a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate receiving surface;
a first conduit coupled to a first gas passageway, wherein the first gas passageway surrounds the expanding channel and comprises a first plurality of inlets extending into the expanding channel; and
a second conduit coupled to a second gas passageway, wherein the second gas passageway surrounds the expanding channel and comprises a second plurality of inlets extending into the expanding channel, and the first plurality of inlets and the second plurality of inlets are positioned to provide a circular gas flow pattern through the expanding channel.
2. The chamber of claim 1 , wherein the first gas passageway is positioned directly above the second gas passageway.
3. The chamber of claim 2 , wherein the first gas passageway and the second gas passageway both surround an upper portion of the expanding channel.
4. The chamber of claim 1 , wherein the first plurality of inlets and the second plurality of inlets are independently positioned to direct gas at an inner surface of the expanding channel.
5. The chamber of claim 4 , wherein the circular gas flow pattern comprises a flow pattern selected from the group consisting of vortex, helix, spiral, twirl, twist, coil, whirlpool, and derivatives thereof.
6. The chamber of claim 5 , wherein the circular gas flow pattern extends at least about 1.5 revolutions around the central axis of the expanding channel.
7. The chamber of claim 6 , wherein the circular gas flow pattern extends at least about 4 revolutions around the central axis of the expanding channel.
8. The chamber of claim 1 , wherein a first valve is coupled to the first conduit and a second valve is coupled to the second conduit, and a first gas source is in fluid communication to the first valve and a second gas source is in fluid communication to the second valve.
9. The chamber of claim 8 , wherein the first and second valves enable an atomic layer deposition process with a pulse time of about 2 seconds or less.
10. The chamber of claim 9 , wherein the pulse time is within a range from about 0.05 seconds to about 0.5 seconds.
11. The chamber of claim 1 , further comprising a reaction zone having a volume of about 3,000 cm 3 or less, wherein the reaction zone is defined between the tapered bottom surface and the substrate receiving surface.
12. The chamber of claim 11 , wherein the volume is about 1,500 cm 3 or less.
13. The chamber of claim 12 , wherein the volume is about 600 cm 3 or less.
14. A chamber for processing substrates, comprising:
a substrate support comprising a substrate receiving surface; and
a chamber lid assembly comprising:
an expanding channel extending along a central axis at a central portion of the chamber lid assembly;
a first conduit coupled to a first gas passageway, wherein the first gas passageway surrounds the expanding channel and comprises a first plurality of inlets extending into the expanding channel;
a second conduit coupled to a second gas passageway, wherein the second gas passageway surrounds the expanding channel and comprises a second plurality of inlets extending into the expanding channel, wherein the first gas passageway is positioned directly above the second gas passageway, and the first plurality of inlets and the second plurality of inlets are positioned to provide a circular gas flow pattern through the expanding channel; and
a first valve coupled to the first conduit and a second valve coupled to the second conduit, where the first and second valves enable an atomic layer deposition process with a pulse time of about 2 seconds or less.
15. The chamber of claim 14 , wherein the pulse time is within a range from about 0.05 seconds to about 0.5 seconds.
16. The chamber of claim 14 , wherein the chamber lid assembly further comprises a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly.
17. The chamber of claim 16 , wherein the tapered bottom surface is shaped and sized to substantially cover the substrate receiving surface.
18. The chamber of claim 14 , wherein a first gas source is in fluid communication to the first valve and a second gas source is in fluid communication to the second valve.
19. The chamber of claim 14 , wherein the first plurality of inlets and the second plurality of inlets are independently positioned to direct gas at an inner surface of the expanding channel.
20. The chamber of claim 19 , wherein the circular gas flow pattern comprises a flow pattern selected from the group consisting of vortex, helix, spiral, twirl, twist, coil, whirlpool, and derivatives thereof.
21. The chamber of claim 20 , wherein the circular gas flow pattern extends at least about 1.5 revolutions around the central axis of the expanding channel.
22. The chamber of claim 21 , wherein the circular gas flow pattern extends at least about 4 revolutions around the central axis of the expanding channel.
23. The chamber of claim 22 , wherein the chamber lid assembly further comprises a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly, the chamber further comprises a reaction zone having a volume of about 3,000 cm 3 or less, and the reaction zone is defined between the tapered bottom surface and the substrate receiving surface.
24. The chamber of claim 23 , wherein the volume is about 1,500 cm 3 or less.