Ultra hydrophilic Ti-O-C based nano film and fabrication method thereof
An ultra-hydrophilic Ti—O—C based nano-film of which deposition thickness was improved and deposition uniformity was excellent was fabricated by mixing a Ti precursor and a liquid having a low boiling point and a high volatility—at a uniform ratio. The catalyst accelerates a vaporization of the Ti precursor and facilitates the Ti precursor to be injected into a reaction chamber, thereby improving plasma polymerization efficiency.
1. A method for fabricating an ultra-hydrophilic Ti—O—C based nano-film comprising:
positioning a substrate to be surface-treated in a reaction chamber in a vacuum state in which at least one electrode is installed;
introducing into the reaction chamber a Ti precursor gas, a reactive gas selected from air or oxygen, and a volatile catalyst having a low boiling point as a deposition accelerant of Ti, wherein a ratio of the Ti precursor and the volatile catalyst is 70:30-50:50;
applying a high voltage to the electrode and thus changing the introduced gases to a plasma state; and forming a Ti—O—C based nano-film on at least one surface of the substrate.
2. The method of claim 1 , wherein the volatile catalyst is one selected among DMB (di-methyl butadiene), THF (tetrahydro furan) and Hexane.
3. The method of claim 1 , wherein the Ti precursor is titanium tetraisopropoxide [Ti(OC 3 H 7 ) 4 ].
4. The method of claim 1 , wherein the Ti precursor, which is a liquid phase precursor, is vaporized to be introduced into the reaction chamber.
5. The method of claim 4 , wherein the Ti precursor gas is vaporized with a heater coil to be heated to a temperature range of 80-120° C.
6. The method of claim 1 , wherein the substrate to be surface-treated is made of metal.
7. The method of claim 6 , wherein a direct current (DC) high voltage is applied to the substrate to be surface-treated.
8. The method of claim 7 , wherein the substrate to be surface-treated is connected to an anode.
9. The method of claim 1 , wherein the Ti precursor is carried into the reaction chamber by a separate carrier gas.
10. The method of claim 9 , wherein the carrier gas is one selected among He, N 2 or Ar.
11. The method of claim 9 , wherein the Ti precursor gas and the carrier gas are introduced at a ratio of 3:1.
12. The method of claim 9 , wherein the carrier gas and the reactive gas are introduced at a ratio of 1:3.
13. The method of claim 1 , wherein the substrate is continuously introduced between two electrodes installed at upper and lower sides in the reaction chamber, so as to successively coat ultra-hydrophilic titanium compound film on both surfaces of the substrate.
14. The method of claim 1 , wherein the Ti precursor gas is introduced into the reaction chamber in admixture with a small amount of silicon precursor.