Ion implanting apparatus for forming ion beam shape
Aimed at providing an ion implantation apparatus elongated in period over which failure of a target work, due to deposition and release of ion species typically to and from the inner surface of a through-hole shaping a beam shape of ion beam, may be avoidable, reduced in frequency of exchange of an aperture component, and consequently improved in productivity, an aperture component shaping a beam shape has a taper opposed to the ion beam, in at least a part of inner surface of at least the through-hole, and has a thick thermal-sprayed film formed so as to cover the inner surface and therearound of the through-hole.
1. An ion implantation apparatus, comprising:
a component, comprising:
a through-hole through which an ion beam is passed to shape a beam shape of said ion beam;
a taper having an angled portion opposed to said ion beam at a first part of an inner surface of said through-hole on a side of incidence of said ion beam, and a leveled portion disposed at a second part of said inner surface of said through-hole and at an opposite side of said through-hole from said angled portion; and
a thermal-sprayed film covering at least the inner surface of said through-hole including said taper.
2. The ion implantation apparatus as claimed in claim 1 , wherein said thermal-sprayed film comprises a porous film.
3. The ion implantation apparatus as claimed in claim 2 , wherein said porous film comprises:
a plurality of recesses formed on a surface of the porous film; and
a plurality of voids formed in said plurality of recesses,
wherein at least a part of said plurality of recesses communicate with at least a part of said plurality of voids, and
wherein at least a part of said plurality of voids communicate with each other.
4. The ion implantation apparatus as claimed in claim 3 , wherein said recesses and said voids of said porous film allow adsorption of ion species of said ion beam and do not affect said beam shape of said ion beam.
5. The ion implantation apparatus as claimed in claim 2 , wherein said porous film comprises a coated film.
6. The ion implantation apparatus as claimed in claim 1 , wherein said thermal-sprayed film comprises silicon.
7. The ion implantation apparatus as claimed in claim 1 , wherein said thermal-sprayed film comprises tungsten.
8. The ion implantation apparatus as claimed in claim 1 , wherein said taper inhibits an erosion of the thermal-sprayed film.
9. The ion implantation apparatus as claimed in claim 1 , wherein said angled portion of said taper spreads toward said side of incidence of said ion beam.
10. A component for shaping a beam shape of an ion beam, comprising:
a through-hole through which said ion beam is passed to shape said beam shape of said ion beam;
a taper having an angled portion opposed to said ion beam at a first part of an inner surface of said through-hole on a side of incidence of said ion beam, and a leveled portion disposed at a second part of said inner surface of said through-hole and at an opposite side of said through-hole from said angled portion; and
a thermal-sprayed film covering at least the inner surface of said through-hole including said taper.
11. The component as claimed in claim 10 , wherein said thermal-sprayed film comprises a porous film.
12. The component as claimed in claim 11 , wherein said porous film has a non-aligned structure.
13. The component as claimed in claim 10 , wherein said taper widens said component starting at the through-hole toward the side of incidence of said ion beam.
14. The component as claimed in claim 10 , wherein said thermal-sprayed film has a thickness of 400 μm or less.
15. The component as claimed in claim 10 , wherein an angle of said taper is in a range from 5° to 45°.
16. The component as claimed in claim 10 , wherein an angle of said taper is in a range from 10° to 40°.
17. The component as claimed in claim 10 , wherein said thermal-sprayed film comprises thermal-sprayed particles, and
wherein said thermal-sprayed particles have an angle of incidence on said taper of less than 90°.
18. A method of manufacturing a component for shaping a beam shape of an ion beam, comprising:
forming a through-hole through which said ion beam is passed to shape the beam shape of said ion beam;
forming a taper having an angled portion opposed to said ion beam at a first part of an inner surface of said through-hole on a side of incidence of said ion beam, and a leveled portion disposed at a second part of said inner surface of said through-hole and at an opposite side of said through-hole from said angled portion; and
forming a thermal-sprayed film covering at least the inner surface of said through-hole including said taper.
19. The method of manufacturing a component as claimed in claim 18 , wherein said forming said thermal-sprayed film comprises thermal-spraying a porous film.
20. The method of manufacturing a component as claimed in claim 19 , wherein said porous film has a non-aligned structure.